Jan Van Houdt - researchr alias

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Viewing Publication 1 - 31 from 31

2024

Gate Side Injection Operating Mode for 3D NAND Flash MemoriesLaurent Breuil, R. Izmailov, Mihaela Ioana Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, Geert Van den bosch, Jan Van Houdt, Maarten Rosmeulen. imw2 2024: 1-4 [doi]

Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin AmplificationTaras Ravsher, Andrea Fantini, Kruti Trivedi, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Jan Van Houdt, Valeri Afanas'ev, Kurt Wostyn, Sebastien Couet, Gouri Sankar Kar. imw2 2024: 1-4 [doi]

Comprehensive Performance and Reliability Assessment of Se-based Selector-Only MemoryTaras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar. irps 2024: 7 [doi]

2023

Optimization of Retention in Ferroelectricity Boosted Gate Stacks for 3D NANDLaurent Breuil, Mihaela Popovici, J. Stiers, Antonio Arreghini, S. Ramesh, G. Van den bosch, Jan Van Houdt, Maarten Rosmeulen. imw2 2023: 1-4 [doi]

Improved MW of IGZO-channel FeFET by Reading Scheme Optimization and Interfacial EngineeringZhuo Chen, Nicolo Ronchi, Amey Walke, Kaustuv Banerjee, Mihaela Ioana Popovici, Kostantine Katcko, Geert Van den bosch, Maarten Rosmeulen, Valeri Afanas'ev, Jan Van Houdt. imw2 2023: 1-4 [doi]

Evaluating the Effects of FeFET Device Variability on Charge Sharing Based AiMC AcceleratorSwatilekha Majumdar, Stefan Cosemans, Arindam Mallik, Peter Debacker, Francky Catthoor, Jan Van Houdt. iscas 2023: 1-5 [doi]

Understanding the impact of La dopant position on the ferroelectric properties of hafnium zirconateMihaela Ioana Popovici, Jasper Bizindavyi, Gourab De, Dae Seon Kwon, Gouri Sankar Kar, Jan Van Houdt. essderc 2023: 121-124 [doi]

2022

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurementsMd Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt. vlsit 2022: 340-342 [doi]

Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectricsBarry J. O'Sullivan, Brecht Truijen, Vamsi Putcha, Alexander Grill, Adrian Chasin, Geert Van den bosch, Ben Kaczer, M. N. K. Alam, Jan Van Houdt. irps 2022: 4 [doi]

Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectorsTaras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar. irps 2022: 10-1 [doi]

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar modeTaras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar. vlsit 2022: 312-313 [doi]

A comprehensive variability study of doped HfO2 FeFET for memory applicationsNicolo Ronchi, Lars-Åke Ragnarsson, U. Celano, Ben Kaczer, K. Kaczmarek, K. Banerjee, Sean R. C. McMitchell, G. Van den bosch, Jan Van Houdt. imw2 2022: 1-4 [doi]

Trap-polarization interaction during low-field trap characterization on hafnia-based ferroelectric gatestacksBrecht Truijen, Barry J. O'Sullivan, Md. Nurul Alam, Dieter Claes, M. Thesberg, Philippe Roussel, Adrian Chasin, Geert Van den bosch, Ben Kaczer, Jan Van Houdt. irps 2022: 12-1 [doi]

2021

First demonstration of ferroelectric Si: HfO2 based 3D FE-FET with trench architecture for dense nonvolatile memory applicationK. Banerjee, L. Breuil, A. P. Milenin, M. Pak, J. Stiers, Sean R. C. McMitchell, L. Di Piazza, G. Van den bosch, Jan Van Houdt. imw2 2021: 1-4 [doi]

Understanding the memory window in 1T-FeFET memories: a depolarization field perspectiveK. Kaczmarek, Marie Garcia Bardon, Y. Xiang, Laurent Breuil, Nicolo Ronchi, Bertrand Parvais, Guido Groeseneken, Jan Van Houdt. imw2 2021: 1-4 [doi]

Impact of mechanical strain on wakeup of HfO2 ferroelectric memoryAnastasiia Kruv, S. R. C. McMitchell, Sergiu Clima, O. O. Okudur, N. Ronchi, Geert Van den bosch, M. Gonzalez, I. De Wolf, Jan Van Houdt. irps 2021: 1-6 [doi]

Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliabilityTaras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar. imw2 2021: 1-4 [doi]

Analog In-memory Computing in FeFET-based 1T1R Array for Edge AI ApplicationsD. Saito, T. Kobayashi, Hiroki Koga, Nicolo Ronchi, K. Banerjee, Y. Shuto, Jun Okuno, K. Konishi, Luca Di Piazza, A. Mallik, Jan Van Houdt, M. Tsukamoto, K. Ohkuri, Taku Umebayashi, Takayuki Ezaki. vlsic 2021: 1-2 [doi]

2019

New Insights into the Imprint Effect in FE-HfO2 and its RecoveryY. Higashi, Karine Florent, A. Subirats, Ben Kaczer, Luca Di Piazza, Sergiu Clima, N. Ronchi, S. R. C. McMitchell, K. Banerjee, Umberto Celano, M. Suzuki, Dimitri Linten, Jan Van Houdt. irps 2019: 1-7 [doi]

2018

Investigation of the endurance of FE-HfO2 devices by means of TDDB studiesKarine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, U. Celano, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken, Jan Van Houdt. irps 2018: 6 [doi]

2017

2014

2012

Trades-off between lithography line edge roughness and error-correcting codes requirements for NAND Flash memoriesPavel Poliakov, Pieter Blomme, Alessandro Vaglio Pret, Miguel Corbalan Miranda, Roel Gronheid, Diederik Verkest, Jan Van Houdt, Wim Dehaene. mr, 52(3):525-529, 2012. [doi]

2011

Cross-cell interference variability aware model of fully planar NAND Flash memory including line edge roughnessPavel Poliakov, Pieter Blomme, Miguel Corbalan, Jan Van Houdt, Wim Dehaene. mr, 51(5):919-924, 2011. [doi]

2007

Distribution and generation of traps in SiO::2::/Al::2::O::3:: gate stacksIsodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt. mr, 47(4-5):525-527, 2007. [doi]

Characterization of charge trapping in SiO::2::/Al::2::O::3:: dielectric stacks by pulsed C-V techniqueGiuseppina Puzzilli, Bogdan Govoreanu, Fernanda Irrera, Maarten Rosmeulen, Jan Van Houdt. mr, 47(4-5):508-512, 2007. [doi]

2003

The HIMOS flash technology: the alternative solution for low-cost embedded memoryJan Van Houdt, Dirk Wellekens, Luc Haspeslagh. pieee, 91(4):627-635, 2003. [doi]

2001

A flash memory technology with quasi-virtual ground array for low-cost embedded applicationsJorgo Tsouhlarakis, Guido Vanhorebeek, Geert Verhoeven, Jan De Blauwe, Shiho Kim, Dirk Wellekens, Paul Hendrickx, Luc Haspeslagh, Jan Van Houdt, Herman Maes. jssc, 36(6):969-978, 2001. [doi]

1998

Novel level-identifying circuit for flash multilevel memoriesDonato Montanari, Jan Van Houdt, Guido Groeseneken, Herman E. Maes. jssc, 33(7):1090-1095, 1998. [doi]

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Publications by 'Jan Van Houdt'

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2024

2023

2022

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2019

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2017

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2012

2011

2007

2003

2001

1998

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