Table of Contents

• Impact of Self-Heating in 5nm FinFETs at Cryogenic Temperatures for Reliable Quantum Computing: Device-Circuit InteractionShivendra Singh Parihar, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch. 1-7 [doi]
• Fast, Scalable, and Highly Accurate Thermal Modeling for Use in GaN/GaAs RF Circuit Modeling PlatformsGergana Drandova, Jose Jimenez, Jesse Wisch, Sourabh Khandelwal, Kirk Ashby. 1-4 [doi]
• Reliability Assessment of a-IGZO and ZnO Thin Film Transistors (TFTs) to X-ray irradiationRodolfo A. Rodriguez-Davila, L. Fernandez-Izquierdo, J. Fink, T. Moise, Robert C. Baumann, B. Gnade, Manuel Quevedo-Lopez, Chadwin D. Young. 1-6 [doi]
• A Unified Physics-Based Stochastic Model for EM-Induced Resistance Degradation in BEoL Interconnect SegmentsValeriy Sukharev, Jun-Ho Choy, Armen Kteyan, J. Shuster-Passage, Seungman Choi, M. Gall. 1-10 [doi]
• V-Ramp VBD Prediction Method Using OCD-Spectrum and Deep-Learning, and Application to Early Detection of V-NAND Low Metal Reliability RiskSungMan Rhee, Sung-Pyo Park, Sangku Park, Yuchul Hwang, Sangwoo Pae, Jun Meng, Yoonju Park. 1-6 [doi]
• Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLEDShiyu Xia, Longda Zhou, Kewei Wang, Xiaobin Fan, Yongkang Xue, Qi Shan, Hannian Wang, Pengpeng Ren, Zhigang Ji, Ru Huang 0001. 1-7 [doi]
• Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN GateM. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico. 1-6 [doi]
• Investigation of Positive Bias Temperature Instability in advanced FinFET nodesYongkang Xue, Miaojia Yuan, Yu Li, Da Wang, Maokun Wu, Pengpeng Ren, Lining Zhang, Runsheng Wang, Zhigang Ji, Ru Huang 0001. 1-5 [doi]
• Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETsChu Yan, Yaru Ding, Yiming Qu, Yi Zhao. 1-6 [doi]
• Total-Ionizing Dose Damage from X-Ray PCB Inspection SystemsNicholas J. Pieper, M. Chun, Yoni Xiong, H. M. Dattilo, Jenna B. Kronenberg, Sanghyeon Baeg, Shi-Jie Wen, Rita Fung, D. Chan, C. Escobar, Bharat L. Bhuva. 1-7 [doi]
• Investigation of the Impact of Ferroelectricity Boosted Gate Stacks for 3D NAND on Short Time Data Retention and EnduranceYusuke Higashi, J. P. Bastos, Adrian Vaisman Chasin, Laurent Breuil, Antonio Arreghini, S. Ramesh, S. Rachidi, Y. Jeong, Geert Van den bosch, Maarten Rosmeulen. 1-6 [doi]
• Decoupling Current and Voltage Mediated Breakdown Mechanisms in CVD MoS2 FETsUtpreksh Patbhaje, Rupali Verma, Jeevesh Kumar, Aadil Bashir Dar, Mayank Shrivastava. 1-7 [doi]
• Measurement of Aging Effect in a Digitally Controlled Inductive Voltage Regulator in 65nmShida Zhang, Nael Mizanur Rahman, Wei-chun Wang, Narasimha Vasishta Kidambi, Carlos Tokunaga, Saibal Mukhopadhyay. 1-6 [doi]
• Thermo-Mechanical Reliability Characteristics of 8H HBM3Jinsoo Bae, H. G. Noh, S. J. Yoo, I. J. Choi, G. H. Bae, Y. M. Shim, S. G. Lee, H. Jang, S. M. Lee, G. H. Chang, K. S. Kwon, C. B. Yoon, S. Y. Lee, J. W. Pyun, H.-J. Kim, S.-B. Ko, Y. C. Hwang, S. Pae. 1-6 [doi]
• Utilizing Transformer Deep Learning Based Outlier Detection to Screen Out Reliability Weak ICsC.-W. Lin, P. C. Tsao, Y. L. Yang, C. C. Sun, C.-C. Huang, C. W. Chen, C. K. Chang, Y. J. Ting, K. Koh, Ross Lee, W. C. Chen, Y.-S. Huang, M. Z. Lee, C. T. Lai, T. H. Lee. 1-5 [doi]
• An Approach to Neutron-Induced SER Evaluation Using a Clinical 290 MeV/ u Carbon Beam and Particle Transport SimulationsRyuichi Nakajima, Shotaro Sugitani, Haruto Sugisaki, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Makoto Sakai. 1-4 [doi]
• Hot-Carrier Aging by Ultrafast Laser on 22FLL FinFET TechnologyRicardo Ascázubi, Bahar Ajdari, Curtis Shirota, Stephen Ramey. 1-6 [doi]
• De-Coupling Thermo-Migration from Electromigration Using a Dedicated Test StructureO. Varela Pedreira, Youqi Ding, D. Coenen, Philippe Roussel, A. S. Saleh, Veerle Simons, Houman Zahedmanesh, Ivan Ciofi, Kris Croes. 1-5 [doi]
• Degradation and Recovery Kinetics Study of Vertical and Lateral Ge-on-Si PhotodetectorsS. Musibau, N. Poumpouridis, Artemisia Tsiara, J. Franco, Mathias Berciano, Joris Van Campenhout, I. De Wout, K. Crees. 1-10 [doi]
• Exploring the Reliability Limits for the Z-Pitch Scaling of Molybdenum Inter-Word Line Oxides in 3D NANDD. Tiernc, Antonio Arreghini, Alicja Lesniewska, Y. Jeong, Marleen H. van der Veen, J. Stiers, N. Bazzazian, Ivan Ciofi, Geert Van den bosch, Maarten Rosmeulen. 1-5 [doi]
• Robustness of Quantum Federated Learning (QFL) Against "Label Flipping Attacks" for Lithography Hotspot Detection in Semiconductor ManufacturingAmandeep Singh Bhatia, Sabre Kais, Muhammad Ashraful Alam. 1-4 [doi]
• Light-Assisted Investigation of the Role of Oxygen Flow during IGZO Deposition on Deep Subgap States and their Evolution Under PBTIPietro Rinaudo, Adrian Vaisman Chasin, Ying Zhao, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Michiel J. van Setten, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco. 1-6 [doi]
• DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power AmplifiersBarry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, A. Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert. 1-9 [doi]
• Virtual FA Methodology for DRAM: Real-Time Analysis and Risk Assessment Method Using TelemetryJungchul Lee, EC Kwon, SH Yoon, R. G. Oh, S. Y. Park, S. H. Youn, K. R. Choi, T. W. Kim, M. C. Kim, J. H. Park, Y. W. Ko, Y. D. Kim, J. S. Moon, H. A. Park, K. O. Hong, J. Y. Yang, J. Y. Yoon, J. M. Yoon, J. M. Lee, J. H. Kim, H. Y. Yoo, S.-J. Kim, N. H. Lee, S.-H. Lee, K. S. Kwon, I. G. Jung, S. Y. Lee, H.-J. Kim, Sangwoo Pae. 1-7 [doi]
• Experimental Segmentation of Vertical Charge Loss Mechanisms in Charge Trap-Based 3D NAND ArraysLuca Chiavarone, Gianluca Nicosia, Niccolò Righetti, Yingda Dong. 1-5 [doi]
• Load-line Dependent Current Filament Dynamics in N anoscale SCR DevicesMitesh Goyal, Mukesh Chaturvedi, Raju Kumar, Mahesh Vaidya, Mayank Shrivastava. 1-6 [doi]
• Robustness to Device Degradation in Silicon FeFET-based Reservoir Computing (Invited)Kasidit Toprasertpong, Eishin Nako, Shin-Yi Min, Zuocheng Cai, Seong-Kun Cho, Rikuo Suzuki, Ryosho Nakane, Mitsuru Takenaka, Shinichi Takagi. 1-6 [doi]
• A Partially-redundant Flip-flip Suitable for Mitigating Single Event Upsets in a FD-SOI Process with Low Performance OverheadJun Furuta, Shotaro Sugitani, Ryuichi Nakajima, Kazutoshi Kobayashi. 1-4 [doi]
• Soft Error Induced System Errors in Image Inference Applications with Glow-Compiled CNNs on MCUsSebastian M. Witkowski, Gary Anderson, Peter Abramowitz. 1-5 [doi]
• SILC and TDDB reliability of novel low thermal budget RMG gate stacksAndrea Vici, Robin Degraeve, Naoto Horiguchi, Ingrid De Wolf, Jacopo Franco. 1-6 [doi]
• 2.5D/3D Packaging and Reliability: New Frontiers, Old Paradigms, and OpportunitiesKaushik Mysore. 1-8 [doi]
• Design for Reliability (DFR) Aware EDA Solution for Product Reliability (Invited)Tianhao Zhang, Norman Chang. 1-6 [doi]
• On the Severity of Self-Heating in FDSOI at Cryogenic Temperatures: In-depth Analysis from Transistors to Full ProcessorAnirban Kar, Florian Klemme, Yogesh Singh Chauhan, Hussam Amrouch. 1-6 [doi]
• Adaptive Clock Gating for Improving Wear out induced Duty Cycle Shift in the Clock NetworkMinki Cho, Balkaran Gill, Rahul Sharma, Shiv Gupta. 1-4 [doi]
• Neutron and Laser Irradiation of Si and Ge DiodesRicardo Ascázubi, F. Rogelio Palomo, José Manuel Quesada 0001, Miguel Antonio Cortes-Giraldo, Jose Antonio Pavón-Rodriguez. 1-5 [doi]
• Layout Guidelines against Charging Damage from the Well-Side Antennas in Separated Power DomainsHsi-Yu Kuo, Yu-Lin Chu, Hung-Da Dai, Chun-Chi Wang, Pei-Jung Lin, Shu-Cheng Kuo, Ethan Guo, Ya-min Zhang, Yu-Ti Su, Chia-Lin Hsu, Kuan-Hung Chen, Tsung-Yuan Chen, Te-Liang Li, Ray Huang, Kuo-Ji Chen, Ming-Hsiang Song, Ryan Lu, Kejun Xia. 1-6 [doi]
• Laboratory X-Ray-Assisted Device Alteration for Fault Isolation and Post-Silicon DebugK. C. Celio, S. Sen, E. Nisenboim, P. M. Pardy, B. Nguyen, V. Le, W. Nolting, S. Kumar, C. A. Peterson, A. Raveh, K. Johnson, B. Stripe, F. Su, M. Lun, S. Lewis, R. I. Spink, W. Yun. 1-5 [doi]
• Non-conducting Hot carrier temperature activation and temperature sense effectX. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy 0001, Florian Cacho. 1-6 [doi]
• A Comprehensive Hot Carrier Injection with Voltage Ramp Stress (HCI-VRS) through Different Model Verification for More than Moore Diversity ApplicationC. H. Chiang, K. P. Sou, D.-S. Huang, J. H. Lee. 1-4 [doi]
• Impacts of Post-Cu CMP Queue Time on ReliabilityYinghong Zhao, Hokyung Park, Ki-Don Lee, Liangshan Chen, Manisha Sharma, Sugento Huandra, Hanson Mao, Brian Filemyr Smith, Wei Xia, Joonah Yoon, Junehwan Kim, Myungsoo Yeo, Shin-Young Chung, Ju Kwang Kim. 1-5 [doi]
• Insight into Latchup Risk in 28nm Planar Bulk Technology for Quantum Computing ApplicationsKateryna Serbulova, Zi-En Qiu, Shih-Hung Chen, Alexander Grill, Kuo-Hsing Kao, Jo De Boeck, Guido Groeseneken. 1-7 [doi]
• A TCAD to SPICE Framework for Isolation of BTI and HCD in GAA-SNS FETs and to Estimate Impact on RO Under Normal and Overclocking ConditionsKaransingh Thakor, Payel Chatterjee, Souvik Mahapatra. 1-6 [doi]
• Reliability testing for silicon photonics and optoelectronics (Invited)Robert W. Herrick. 1-10 [doi]
• Reversible and Irreversible Polarization Degradation of Hf0.5Zr0.5O2 Capacitors with Coherent Structural Transition at Elevated TemperaturesZhaomeng Gao, Tianjiao Xin, Cheng Liu, Yilin Xu, Yiwei Wang, Yunzhe Zheng, Rui Wang, Xiaotian Li, Yonghui Zheng, Kai Du, Diqing Su, Zhaohao Zhang, Huaxiang Yin, Weifeng Zhang, Chao Li, Xiaoling Lin, Haitao Jiang, Sannian Song, Zhitang Song, Yan Cheng, Hangbing Lyu. 1-5 [doi]
• On-Chip Characterization of Random Telegraph Signal Noise in Bulk 90 nm CMOSJ. Kim, T. Daniel Loveless, J. Pew, R. Young, D. Reising, M. Nour, P. Manos, M. Chambers, Hugh J. Barnaby, J. Neuendank. 1-6 [doi]
• Exploring the border traps near the SiO2-SiC interface using conductance measurementsP. Kumar, M. Krummenacher, H. G. Medeiros, S. Race, P. Natzke, I. Kovacevic-Badstübner, M. E. Bathen, U. Grossner. 1-6 [doi]
• Reduced RC Time Constant High Voltage Tolerant Supply Clamp for ESD Protection in 16nm FinFET TechnologyShudong Huang, Srivatsan Parthasarathy, Yuanzhong Paul Zhou, Jean-Jacques Hajjar, Elyse Rosenbaum. 1-7 [doi]
• $\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extraction in Hard-Switched E-mode GaN HEMTs: Impact of Passivation and LayoutDavide Favero, Carlo De Santi, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. 1-4 [doi]
• Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization StudyTommaso Rollo, Hansel Lo, Luca Larcher, Christopher Olsen, Milan Pesic. 1-5 [doi]
• Defect Mechanisms Responsible for Silent Data ErrorsManu Shamsa, David Lerner. 1-5 [doi]
• A New Clustering-Function-Based Formulation of Temporal and Spatial Clustering Model Involving Area Scaling and its Application to Parameter ExtractionErnest Y. Wu, Brian T. McGowan, Ronald Bolam, Huai Huang, Huimei Zhou, Miaomiao Wang 0006. 1-9 [doi]
• Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)Sandeep R. Bahl, Jungwoo Joh, Fei Yang. 1-7 [doi]
• Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAMLongda Zhou, Jie Li, Pengpeng Ren, Sheng Ye, Da Wang, Zheng Qiao, Zhigang Ji. 1-6 [doi]
• An SEU Cross Section Model Reproducing LET and Voltage Dependence in Bulk Planar and FinFET SRAMsKozo Takeuchi, Takashi Kato, Masanori Hashimoto. 1-4 [doi]
• Enhancing EM Reliability and Lifetime Modeling: A Multi-Link Structure ApproachH.-C. Chang, P. J. Liao, S. H. Chen, Y.-K. Chang, C. P. Li, W. C. Liao, M.-H. Hsieh, H. W. Yang, J. H. Lee, C.-M. Huang, Jun He. 1-4 [doi]
• Impact of Lightly Doped Drain on Hot Carrier Degradation Variability in N-FETs and SRAM CellsQiao Teng, Yongyu Wu, Junzhe Kang, Kai Xu, Dawei Gao. 1-4 [doi]
• ASAP: An Efficient and Reliable Programming Algorithm for Multi-level RRAM CellJingwei Sun, Zongwei Wang, Jiajun Gao, Linbo Shan, Qishen Wang, Yuhang Yang, YiMao Cai, Ru Huang. 1-4 [doi]
• On The Role of Stress Engineering of Surface Passivation in Determining the Device Performance of AlGaN/GaN HEMTsMehak Ashraf Mir, A. Thakare, Mohammad Ateeb Munshi, V. Avinash, Saniya S. Wani, Zubear Khan, Rajarshi Roy Chaudhuri, Simran R. Karthik, Rasik Rashid Malik, Vipin Joshi, Mayank Shrivastava. 1-5 [doi]
• Scanning NV Microscopy - Tracing Currents at the Nanometer ScaleG. Puebla Hellmann, B. Josteinsson, R. Mahjoub, S. Josephy, A. Morales. 1-6 [doi]
• Study of Thermomechanical Damage Mechanism in Al Interconnects in Al-SiO2 structure by High Density Peak CurrentHariram Mohanram, Harikrishnan Kumarasamy, Choong-Un Kim, Young Joon Park, Srikanth Krishnan. 1-6 [doi]
• Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate StressS. R. Stein, J. Kim, S. Das, Daniel J. Lichtenwalner, S. Ryu. 1-5 [doi]
• Machine Learning Unleashes Aging and Self-Heating Effects: From Transistors to Full Processor (Invited Paper)Hussam Amrouch, Victor M. van Santen, Javier Diaz-Fortuny, Florian Klemme. 1-8 [doi]
• Experimental Insights into the Role of Inter-valley and Defect Transitions of Hot Electrons in Determining Self-heating in AlGaN/GaN HEMTsRajarshi Roy Chaudhuri, Vipin Joshi, Saniya S. Wani, Simran R. Karthik, Rasik Rashid Malik, Mayank Shrivastava. 1-6 [doi]
• Validating Supply Chain against Recycled COTS ICs using I/O Pad Transistors: A Zero-Area Intrinsic Odometer ApproachMd. Asaduz Zaman Mamun, Nathan J. Conrad, Saeed Mohammadi, Muhammad Ashraful Alam. 1-8 [doi]
• Breakthrough Metal/Graphene Interface Phonon Engineering for Reliable Graphene Based-Heat SpreadersJeevesh Kumar, Aadil Bashir Dar, Asif A. Shah, K. M. Amogh, Sumana Chattaraj, Utpreksh Patbhaje, Anand Kumar Rai, Rupali Verma, Mayank Shrivastava. 1-5 [doi]
• Electromigration Test Chip Experiments from Realistic Power Grid Structures: Failure Trend Comparison and Statistical AnalysisYong Hyeon Yi, Chris H. Kim, Armen Kteyan, Alexander Volkov, Stéphane Moreau, Valeriy Sukharev. 1-6 [doi]
• Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O2-Based Ferroelectric NVDRAMDevanarayanan Ettisserry, Angelo Visconti, Mauro Bonanomi, Riccardo Pazzocco, Andrea Locatelli, Alessandro Sebastiani, Ashonita Chavan, Matthew Hollander, Giorgio Servalli, Alessandro Calderoni, Nirmal Ramaswamy. 1-8 [doi]
• Embedded Deep-Nwell Collector Used to Improve Latch-Up Immunity of Multi-Functional I/O Buffer with Indirect Power-Connected N-WellChen-Wei Hsu, Ming-Dou Ker, Ping-Lin Chung, Chin-Tung Cheng, Chih-Ping Chen. 1-4 [doi]
• Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage currentAnirudh Varanasi, Robin Degraeve, Philippe J. Roussel, Andrea Vici, Clement Merckling. 1-7 [doi]
• A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling EffectShuying Wang, Yewei Zhang, Yunjoong Kim, Pengpeng Ren, Zhigang Ji. 1-6 [doi]
• Anomalous Mixed-Mode Damage Effects in SiGe HBTs at Cryogenic TemperaturesHarrison P. Lee, Delgermaa Nergui, Jeffrey W. Teng, Jackson P. Moody, Nelson Sepúlveda-Ramos, John D. Cressler. 1-4 [doi]
• Thermal Performance Evaluation of Multi-Core SOCs Using Power-Thermal Co-SimulationSubrat Mishra, Bjorn Vermeersch, Sankatali Venkateswarlu, Halil Kukner, A. Sharma, G. Mirabeli, Fabian M. Bufler, Moritz Brunion, Dawit Burusie Abdi, Herman Oprins, Dwaipayan Biswas, Odysseas Zografos, Francky Catthoor, Pieter Weckx, Geert Hellings, James Myers, Julien Ryckaert. 1-6 [doi]
• Self-Heating Effect of Device-Circuit with Back-side Power Delivery Network beyond 3nm NodePan Zhao, Jinghan Xu, Taoyu Zhou, Songhan Zhao, Naiqi Liu, Xinpeng Li, YanDong He, Xiaoyan Liu, Gang Du. 1-6 [doi]
• Data Center Silent Data Errors: Implications to Artificial Intelligence Workloads & MitigationsB. Bittel, M. Shamsa, Benson Inkley, A. Gur, David P. Lerner, M. Adams. 1-5 [doi]
• Comprehensive Time Dependent Dielectric Breakdown (TDDB) Characterization of Ferroelectric Capacitors Under Bipolar Stress ConditionsPriyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Khandker Akif Aabrar, TaeYoung Song, Sharadindu Gopal Kirtania, Dipjyoti Das, Chinsung Park, Nashrah Afroze, Mengkun Tian, Shimeng Yu, Ahmad Ehtesham Islam, Suman Datta, Souvik Mahapatra, Asif Islam Khan. 1-5 [doi]
• Device Design and Reliability of GAA MBCFETM. Kang, M. Chang, Y. Park, C. Noh, S. H. Hong, B. Park, Y. H. Park, Y. C. Jung, W. S. Lim, G. H. Kim, Y. Lee, H. Yang, D. Shin, J.-G. Yang, K.-H. Cho, W. C. Jeong, H. J. Cho, W. H. Kwon, D.-W. Kim, K. Rim, J. H. Song. 1-6 [doi]
• Re-consideration of Correlation between Interface and Bulk Trap Generations using Cryogenic MeasurementY. Mitani, T. Suzuki, Y. Miyaki. 1-5 [doi]
• Possible Origins, Identification, and Screening of Silent Data Corruption in Data CentersDishant Sangani, Ben Kaczer, Pieter Weckx, Philippe J. Roussel, Subrat Mishra, Erik Jan Marinissen, Georges G. E. Gielen. 1-7 [doi]
• Drift Compensation in Multilevel PCM for in-Memory Computing AcceleratorsL. Pistolesi, Artem Glukhov, Amadeo de Gracia Herranz, M. Lopez-Vallejo, Marcella Carissimi, Marco Pasotti, Pier Luigi Rolandi, Andrea Redaelli, I. Muñoz-Martín, S. Bianchi, A. Bonfanti, Daniele Ielmini. 1-4 [doi]
• Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETsAyan K. Biswas, Daniel J. Lichtenwalner, Jae Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas. 1-5 [doi]
• Impact of Hot Carrier Degradation and Bias Temperature Instability on GHz Cycle-to-Cycle Variation in Ultra-Scaled FinFETsYiming Qu, Chu Yan, Yaru Ding, Yi Zhao. 1-6 [doi]
• Deep Learning-Assisted Trap Extraction Method from Noise Power Spectral Density for MOSFETsJinghan Xu, Zheng Zhou, Mengqi Fan, Zixuan Sun, Shuhan Wang, Zili Tang, Fei Liu, Xiaoyan Liu. 1-7 [doi]
• Investigation of the Moisture- Driven Dynamics of Time- Dependent Dielectric Breakdown in Polymeric Dielectrics for Galvanic IsolatorsM. Greatti, J. L. Mazzola, C. Monzio Compagnoni, Alessandro S. Spinelli, D. Paci, F. Speroni, V. Marano, M. Lauria, Gerardo Malavena. 1-7 [doi]
• An Analysis of CDM-induced BTI-like Degradation using VF-TLP in Advanced FinFET TechnologySangmin Oh, Taeyoung Jeong, Junghwan Yum, Minhyuk Lim, Yoohwan Kim, Bongyong Jeong, Jeongmin Jo, Hyewon Shim, Shin-Young Chung, Paul Jung. 1-5 [doi]
• The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTsDelgermaa Nergui, M. Hosseinzadeh, Y. A. Mensah, H. P. Lee, D. G. Sam, K. Li, E. X. Zhang, Daniel M. Fleetwood, John D. Cressler. 1-5 [doi]
• Measurement of Aging Effect on an Analog Computing-In-Memory Macro in 28nm CMOSWei-chun Wang, Shida Zhang, Sudarshan Sharma, Minah Lee, Saibal Mukhopadhyay. 1-4 [doi]
• Interface Engineering of Trench-Ox for Modern DRAM DevicesSoojung Hwang, Jongkyu Kim, Juntae Kim, Dahyun Cha, Minho Kim, Dongkyu Jang, Sunghak Cho, Seokhyang Kim, Jaeseong Park, Hyungjoon Kim, Sukwon Yu, Boyoung Song, Hyodong Ban. 1-4 [doi]
• Missing Trigger Circuit Action and Device Engineering for Conventional Nanoscale SCRMitesh Goyal, Mukesh Chaturvedi, Raju Kumar, Mahesh Vaidya, Mayank Shrivastava. 1-6 [doi]
• Investigation of the Electron Trapping in Commercial Thick Silicon Dioxides Thermally Grown on 4H-SiC under the Constant Current StressJiashu Qian, Limeng Shi, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori, Tianshi Liu, Shengnan Zhu. 1-6 [doi]
• Reliability Assessment for an In-3D-NAND Approximate Searching SolutionPo-Hao Tseng, Yu-Hsuan Lin, Feng-Min Lee, Tian-Cig Bo, Ming-Hsiu Lee, Kuang-Yeu Hsieh, Keh-Chung Wang, Chih-Yuan Lu. 1-6 [doi]
• A Valid Experimental Design of the Lifetime Prediction for NAND Cell OxideHyuk Je Kwo, Hyung Suk Yu, Bongman Choi, Jinseon Yeom, Hyungsuk Kim, Tae-Min Park, JaeYong Jeong, Eun-Kyoung Kim. 1-6 [doi]
• Reliability Assesement of Ferroelectric nvCAP for Small-Signal Capacitive Read-OutOmkar Phadke, Halid Mulaosmanovic, Stefan Dünkel, Sven Beyer, Shimeng Yu. 1-5 [doi]
• On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation Processes Investigated by a Novel Experimental ApproachM. Boito, Manuel Fregolent, Carlo De Santi, A. Abbisogni, S. Smerzi, Isabella Rossetto, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. 1-5 [doi]
• Modeling of Post-Cycling Retention Bake in 3-D CTF TLC NAND ArraysRashmi Saikia, Himanshu Rai, Souvik Mahapatra. 1-6 [doi]
• Fundamental understanding of NBTI degradation mechanism in IGZO channel devicesYing Zhao, Pietro Rinaudo, Adrian Vaisman Chasin, Brecht Truijen, Ben Kaczer, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Ingrid De Wolf, Gouri Sankar Kar, Jacopo Franco. 1-7 [doi]
• BEOL tip-to-tip dielectric reliability characterization using a design-representative test structureY. Fang, Alicja Lesniewska, Ivan Ciofi, Philippe Roussel, Chen Wu, Victor Vega-Gonzalez, Ingrid De Wolf, Kris Croes. 1-7 [doi]
• Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence ApplicationsY. Guo, R. Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede. 1-7 [doi]
• Ferroelectric HfO2-based Capacitors for FeRAM: Reliability from Field Cycling Endurance to Retention (invited)Pramoda Vishnumurthy, Ruben Alcala, Thomas Mikolajick, Uwe Schroeder, Luis Azevedo Antunes, Alfred Kersch. 1-10 [doi]
• Statistical Modeling of Time-Dependent Post-Programming Conductance Drift in Analog RRAMRuofei Hu, Jianshi Tang, Yue Xi, Zhixing Jiang, Yuyao Lu, Chengxiang Ma, Junchen Li, Bin Gao 0006, He Qian, Huaqiang Wu. 1-6 [doi]
• Single-Event Performance of Flip Flop Designs at the 5-nm Bulk FinFET Node at Near-Threshold Supply VoltagesJenna B. Kronenberg, Yoni Xiong, Nicholas J. Pieper, Dennis R. Ball, Bharat L. Bhuva. 1-5 [doi]
• Evaluation of Burn-in Technique on Gate Oxide Reliability in Commercial SiC MOSFETsLimeng Shi, Jiashu Qian, Michael Jin, Monikuntala Bhattacharya, Hengyu Yu, Marvin H. White, Anant K. Agarwal, Atsushi Shimbori. 1-6 [doi]
• On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETsPeter Moens, F. Geenen, M. Avramenko, G. Gomez-Garcia, Kevin Matocha. 1-7 [doi]
• Comprehensive Study of SER in FDSOI-Planar: 28 nm to 18 nm Scaling Effect and Temperature DependenceTaiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae. 1-5 [doi]
• Data Retention Insights from Joint Analysis on BEOL-Integrated HZO-Based Scaled FeCAPs and 16kbit 1T-1C FeRAM ArraysJ. Laguerre, Simon Martin 0006, Jean Coignus, Catherine Carabasse, Marc Bocquet, François Andrieu, Laurent Grenouillet. 1-7 [doi]
• Electric Field Coupled Molecular Dynamic Insights into Anisotropic Reliability Issues of Monolayer MoS2 Based 2D FETsAsif A. Shah, Rupali Verma, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Jeevcsh Kumar, Anand Kumar Rai, Sumana Chattaraj, Mayank Shrivastava. 1-4 [doi]
• Thermal Considerations on RF Reliability and Aging in SOI CMOS Based Power AmplifiersP. Srinivasan 0002, Oscar H. Gonzalez, Oscar D. Restrepo, J. Lestage, Shafi Syed, W. Taylor, Anirban Bandyopadhyay, Martin Gall, S. Ludvik. 1-6 [doi]
• Improved Endurance Reliability of Ferroelectric Hafnium Oxide-Based BEoL Integrated MFM CapacitorsAyse Sünbül, David Lehninger, Raik Hoffmann, Hannes Mähne, Kerstin Bernert, Steffen Thiem, Thomas Kämpfe, Konrad Siedel, Maximilian Lederer, Lukas M. Eng. 1-5 [doi]
• Investigation of Read Disturb for Hf0.5Zr0.502 Ferroelectric Field-Effect Transistors Based Neuromorphic ApplicationsXinze Li, Yiqin Zeng, Yuxuan Wu, Ying Sun, Junru Qu, Chengji Jin, Jiani Gu, Rongzong Shen, Gaobo Lin, Dawei Gao, Xiao Yu, Bing Chen, Ran Cheng, Genquan Han. 1-5 [doi]
• Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping MeasurementsAlberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. 1-5 [doi]
• Soft-Error Sensitivity in SRAM Manufactured by Bulk Gate-All-Around (GAA) TechnologyTaiki Uemura, Byungjin Chung, Jaehee Choi, Seungbae Lee, Shin-Young Chung, Yuchul Hwang, Sangwoo Pae. 1-6 [doi]
• EDA method to address interconnect reliability and reduce overdesign in custom analog designsMarkus Herklotz, I. Kühn, Oscar D. Restrepo, S. Siemes, S. Choi, H. Mau. 1-6 [doi]
• General Statistical Model for Dielectric Breakdown Including Reverse Area Scaling - The Role of Area-Dependent Dynamic CompetitionErnest Y. Wu, Takashi Ando, Paul Jamison. 1-8 [doi]
• Challenges of Gate Stack TDDB in Gate-All-Around Nanosheet Towards Further ScalingHuimei Zhou, Miaomiao Wang 0006, Ernest Y. Wu. 2 [doi]
• Modeling Dark Current Degradation of Monolithic InGaAs/GaAs-On-Si Nano-Ridge PhotodetectorsPing-Yi Hsieh, Ameni Ben Driss, Artemisia Tsiara, Barry J. O'Sullivan, Didit Yudistira, Bernardette Kunert, Joris Van Campenhout, Ingrid De Wolf. 2 [doi]
• The First Investigation of Switching Lifetime on Parallel-Connected GaN Power DevicesYifei Huang, Qimeng Jiang, Sen Huang, Xinyue Dai, Xinhua Wang, Xinyu Liu. 2 [doi]
• HV-CV Analysis Trapping Behavior in 650V pGaN HEMT with Field Plates for High-Voltage Power ApplicationsY.-S. Lin, Cheng-Hsun Yang, C. H. Wang, K. P. Sou, Cheng-Hong Yang, M. C. Shih, W. S. Hung, W. H. Chuang, F. M. Ciou, P. C. Chiu, C. C. Hsu, C.-F. Chen, D. M. Kuo. 2 [doi]
• Vmin Shift Prediction Using Machine Learning-Based Methodology for Automotive ProductsY. L. Yang, P. C. Tsao, C.-W. Lin, H. Q. Chen, B. J. Huang, Hank Hsieh, Kerwin Chen, Ross Lee, Khim Koh, Y. J. Ting, B. C. Hsu, Y.-S. Huang, Citi Lai, M. Z. Lee, T. H. Lee. 3 [doi]
• A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETsTibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen. 3 [doi]
• Comparing the Reliability of Solid-State Drives Based on TLC and QLC NAND Flash Memories (Invited)Robert Frickey, Joseph Doller, Robert Norton, Roman Sancho, Rakhshanda Sayyad, Dmitry Ustinov, Raymond Wang, Harvey Xu. 3 [doi]
• A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation ProfilesA. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy 0001, X. Federspiel, S. Crémer, Pascal Chevalier 0002. 4 [doi]
• Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistorsBastien Bcltrando, Bruno Coppolelli, Jung-Bae Kim, Yang Ho Bae, Stephen Weeks, Lisa Enman, Ghazal Saheli, Davide Cornigli, Stuart Brinkley, Mark Saly, Luca Larcher, Dong Kil Yim, Milan Pesic. 4 [doi]
• Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer TechnologyJavier Diaz-Fortuny, Pablo Saraza-Canflanca, Alex Romano-Molar, Erik Bury, Robin Degraeve, Ben Kaczer. 4 [doi]
• Robustness Assessment Through 77GHz Operating Life Test of Power Amplifier for Radar Applications in 28nm FD-SOI CMOSFlorian Cacho, P. Cathelin, Joycelyn Hai, S. Bouvot, J. Nowakowski, M. Martinez, R. Debroucke, S. Jean, R. Paulin, J. Antonijevic, X. Federspiel, Nicolas Planes, Giuseppe Papotto, Alessandro Parisi, Alessandro Finocchiaro, Andrea Cavarra, Alessandro Castorina, Claudio Nocera, Giuseppe Palmisano. 4 [doi]
• Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion EffectsMarco Saro, Francesco de Pieri, Andrea Carlotto, Mirko Fornasier, Fabiana Rampazzo, Carlo De Santi, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Davide Bisi, Matthew Guidry, Stacia Keller, Umesh K. Mishra. 5 [doi]
• Impact of Edge and Basal Plane Oxidation on the Stability of Oxygen Doped MoS2- RRAMSuman Gora, Jay Singh, Mandeep Jangra, Arnab Datta. 5 [doi]
• Reliability Considerations for 5G and 6G Phased ArraysJeremy Dunworth, Jefy Alex Jayamon, Peter M. Asbeck, Gabriel M. Rebeiz. 5 [doi]
• Cell Lifetime Degradation Model Development for Li-Ion Coin Cells considering Calendar Aging and Post-Knee Degradation (Invited)Pradeep Lall, Ved Soni. 5 [doi]
• A Systematic Study of HCI Improvement in FinFET with Source/Drain Implant and Geometry ModulationRakesh Ranjan, Pavitra R. Perepa, Ki-Don Lee, Ashish Kumar Jha, Kartika C. Sahoo, Kayla N. Sanders, Robert Moeller, Prateek Sharma, Minhyo Kang, Peter Kim, Kwanjae Song, Yongwoo Jeon, Seungho Kim, Hyewon Shim, Shin-Young Chung, Ju Kwang Kim. 5 [doi]
• New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic TemperatureZirui Wang, Haoran Wang, Yuxiao Wang, Zixuan Sun, Lang Zeng, Runsheng Wang, Ru Huang 0001. 6 [doi]
• PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gallium Nitride TransistorsSoumitra Joy, Kaustubh Joshi, Ahmad Zubair, Samuel Bader, Jason Peck, Michael Beumer, Pratik Koirala, Marko Radosavljevic, Heli Vora, Inanc Meric, Han Wui Then. 6 [doi]
• Drain Current Degradation Induced by Charge Trapping/De-Trapping in Fe-FETTaeyoung Kim, Suhwan Lim, Ilho Myeong, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Moonkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Sijung Yoo, Hyun-Jae Lee, Duk-Hyun Choe, Seung Geol Nam, Ilyoung Yoon, Chaeho Kim, Kwanzsoo Kim, Kwanzmin Park, Bong Jin Kuh, Jinseong Heo, Wanki Kim, Daewon Ha, Jaihyuk Song. 6 [doi]
• A Full Transient ElectroThermal - Elastoplastic Mechanical and Metallurgical 2D FEM of SiC MOSFET for Gate-Region Stress Investigation under Short-Pulse Short-Circuit (Invited)Mustafa Shqair, Emmanuel Sarraute, Frédéric Richardeau. 7 [doi]
• Accelerating Device-Circuit Self-Heating Simulations with Dynamic Time Evolution for GAAFETSihao Chen, Yu Li, Baokang Peng, Zixuan Sun, Lining Zhang, Runsheng Wang, Ru Huang 0001. 7 [doi]
• Comprehensive Performance and Reliability Assessment of Se-based Selector-Only MemoryTaras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar. 7 [doi]
• Modeling of Negative Bias Temperature Instability (NBTI) for Gate-All-Around (GAA) Stacked Nanosheet TechnologyLeitao Liu, Jingtian Fang, Ashish Pal, Plamen Asenov, Mohit Bajaj, Bei Deng, Xi-Wei Lin, Souvik Mahapatra, Subi Kengeri, El Mehdi Bazizi. 7 [doi]
• A Novel Induced Offset Voltage Sensor for Separable Wear-Out Mechanism Characterization in a 12nm FinFET ProcessIan Hill, Mateo Rendón, André Ivanov. 8 [doi]
• Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device ArraysPablo Saraza-Canflanca, Dishant Sangani, Javier Diaz-Fortuny, Stanislav Tyaginov, Georges G. E. Gielen, Erik Bury, Ben Kaczer. 8 [doi]
• On-Chip Single-Shot Pulse Generator for TDDB Characterization on a Sub-Nanosecond TimescaleMatthew Drallmeier, Yujie Zhou, Elyse Rosenbaum. 8 [doi]
• Thermal Analysis of High-Performance Server SoCs from FinFET to Nanosheet TechnologiesNitish Kumar, Sankatali Venkateswarlu, Yukai Chen, Moritz Brunion, Subrat Mishra, Ankur Gupta, Pushpapraj Singh, Francky Catthoor, James Myers, Julien Ryckaert, Dwaipayan Biswas. 8 [doi]
• Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin IdentificationDa Wang, Yongkang Xue, Yong Liu, Pengpeng Ren, Zixuan Sun, Zirui Wang, Yueyang Liu, Zhijun Cheng, Haiyang Yang, Xiangli Liu, Blacksmith Wu, Kanyu Cao, Runsheng Wang, Zhigang Ji, Ru Huang 0001. 9 [doi]
• A Comprehensive Study of Read-After-Write-Delay for Ferroelectric VNANDIlho Myeong, Suhwan Lim, Taeyoung Kim, Sanghyun Park, Suseong Noh, Seung Min Lee, Jongho Woo, Hanseung Ko, Youngji Noh, Munkang Choi, Kiheun Lee, Sangwoo Han, Jongyeon Baek, Kijoon Kim, Dongjin Jung, Jisung Kim, Jaewoo Park, Seunghyun Kim, Hyoseok Kim, Ilyounz Yoon, Jaeho Kim, Kwangsoo Kim, Kwangmin Park, Bong Jin Kuh, Wanki Kim, Daewon Ha, Sujin Ahn, Jaihyuk Song, Sijung Yoo, Hyun-Jae Lee, Duk-Hyun Choe, Seung Geol Nam, Jinseong Heo. 9 [doi]
• Performance and Reliability of Nanosheet Oxide Semiconductor FETs with ALD-Grown InGaO for 3D Integration (Invited)Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka. 9 [doi]
• Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOLAndrea Palmieri, Mahdi Tavakoli, Chi Ching, Wenkai Zheng, Shi You, Xiaodong Zhang, Davide Cornigli, Michael Haverty, Navneet Singh, Luca Larcher, Monika Jamieson, Ajay Bhatnagar, Alexander Jansen, Max Gage, Jianshe Tang, Sameer Deshpande, Brian Brown, Arun Srivatsa, Mehul Naik, Bo Xie, Jerry Gelatos, Joung Joo Lee, Xianmin Tang, Gaurav Thareja, Milan Pesic. 10 [doi]
• A Novel Method for the Determination of Electromigration-Induced Void Nucleation StressesJ. Shuster-Passage, S. Abdel Razek, M. Mattoo, Meike Hauschildt, Seungman Choi, Martin Gall, Armen Kteyan, Jun-Ho Choy, Valeriy Sukharev, Matthias Kraatz, J. R. Lloyd. 10 [doi]
• Charge Trapping in Irradiated 3D Devices and ICs (Invited)En-xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood. 10 [doi]
• Microscopic Modeling of MgO Barrier Degradation Due to Interface Oxygen Frenkel Defects in Scaled MTJ Toward High-Density STT-MRAMRina Takashima, Takeo Koike, Shogo Itai, Hideyuki Sugiyama, Young-Min Lee, Masaru Toko, Soichiro Ono, Daisuke Watanabe, Soichi Oikawa, Katsuhiko Koi, Hiroyuki Kanaya, Masahiko Nakayama, Kohji Nakamura. 10 [doi]
• The Enhancement Mechanisms of SiOx Hardness via Manipulation of Oxygen ContentHwanbeom Cho, Kyeongeun Kim, Minkyoung Kim, Chinam An, Noeul Sim, Youngseok Oh, Minseung Kim, Gyumyeong Kim, Jinkyung Park, Jin Jeon, Minjin Kim, Eunae Heo, Youngju Lim, Moonhyun Lee, SangHee Lee, Minji Kim. 10 [doi]
• Scaling Trends and Bias Dependence of SRAM SER from 16-nm to 3-nm FinFETBalaji Narasimham, A-R. Montoya, C. Paone, T. Riehle, Mike Smith, Liming Tsau, Dennis R. Ball, Bharat L. Bhuva. 10 [doi]
• Machine Vision Observation, Artificial Intelligence Pattern Recognition, Protective Circuit Design, Characterization of Multiple Materials, and Nano-Structural Analysis for Investigating InGaN Green Light Emitting Diode Degradation in a Salty Water Vapor EnvironmentCheng-Shan Chen, Chun-Yen Yang, Shao-Jui Yang, Deng-Yi Wang, Yaw-Wen Kuo, Wei-Han Hsiao, Hsin-Hung Chou, Chia Feng Lin, Yung-hui Li, Yewchung Sermon Wu, Hsiang Chen, Jung Han. 10 [doi]
• Orthorhombic-I Phase and Related Phase Transitions: Mechanism of Superior Endurance $(> 10^{14})$ of HfZrO Anti-ferroelectrics for DRAM ApplicationsZeping Weng, Zhangsheng Lan, Yaru Ding, Yiming Qu, Yi Zhao. 11 [doi]
• Research on the Latch-Up Mechanism of DSOI at High TemperatureYuchen Wu, Fanyu Liu, Bo Li, Jiangjiang Li, Siyuan Chen, Yang Huang, Jiamin Li, Tiexin Zhang, Jing Wan, Yong Xu. 16 [doi]
• Role of Gate Hole Injection in Minimizing Substrate Coupling and Electron Trapping in AlGaN/GaN Power HEMTsA. Cavaliere, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. 17 [doi]
• Body Bias Impact on ION Degradation in SiGe-Channel pMOS without Si-Cap for DRAM PeripheryDibyendu Chatterjee, Uma Sharma, Hiroshi Murai, Tomohiko Kudo, Raghu Singanamalla, Haitao Liu. 22 [doi]
• Effect of Back Gate on Word Line Disturb Immunity of a Vertical Channel DRAM Cell Array TransistorMoonyoung Jeong, Sangho Lee, Yootak Jun, Kiseok Lee, Seokhan Park, Jeonghoon Oh, Ilgweon Kim, Jemin Park. 23 [doi]
• Charge Loss Improvement in 3D Flash Memory by Molecular Oxidation of Tunneling OxidePei-Ci Jhang, Chi-Pin Lu, Jung-Yu Shieh, Ling-Wu Yang, Tahone Yang, Kuang-Chao Chen, Hang-Ting Lue, Pei-Ying Du, Chih-Yuan Lu. 24 [doi]
• Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and CountermeasureMondol Anik Kumar, Biswajit Ray. 25 [doi]
• Side and Corner Region Non-Uniformities in Grown SiO2 and Their Implications on Current, Capacitance and Breakdown CharacteristicsJ. P. Bastos, Barry J. O'Sullivan, Yusuke Higashi, Adrian Vaisman Chasin, Jacopo Franco, Hiroaki Arimura, J. Ganguly, Elena Capogreco, Alessio Spessot, N. Horiguchi. 36 [doi]
• Multiple Bit Upsets in Register Circuits at the 5-nm Bulk FinFET NodeYoni Xiong, Nicholas J. Pieper, Jenna B. Kronenberg, Dennis R. Ball, Megan Casey, Bharat L. Bhuva. 46 [doi]
• Repetitive Pulse Testing for LDMOS Transistor ReliabilityTianjiao Liu, Michael Cook 0004, Chris Kendrick. 50 [doi]
• 3TRB TestingB. D. Rummel, C. E. Glaser, R. T. Gurule, M. Groves, A. T. Binder, R. Floyd, L. Yates, K. J. Reilly, R. J. Kaplar. 52 [doi]
• Assessing Non-Conducting Off-State Induced Hard Breakdown for PD-SOI MOSFETs using an RF Measurement TechniqueAlan Y. Otero-Carrascal, Dora A. Chaparro-Ortiz, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Gonzalez, P. Srinivasan 0002. 53 [doi]
• Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB StressM. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, A. Marcuzzi, Carlo De Santi, Matteo Meneghini. 54 [doi]
• Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope MethodPhilipp Steinmann, Daniel J. Lichtenwalner, Shane Stein, Jae Hyung Park, Suman Das, Sei-Hyung Ryu. 58 [doi]
• Self-Heating and Process-Induced Threshold Voltage Aware Reliability and Aging Analysis of Forksheet FETSunil Rathore, Navjeet Bagga, S. DasGupta. 65 [doi]
• Design Techniques Evaluation to Mitigate RTS Noise Effect in Column ADC of 3D Stacked Image SensorsM. Gouveia da Cunha, Sébastien Place, O. Gauthier, N. Virollet, M. Vignetti, Philippe Martin-Gonthier, Pierre Magnan, Vincent Goiffon. 67 [doi]
• A Novel Quantitative Model for Combination Effects of Hydrogen and Process Heat on Peripheral Transistors in 3D-NAND Flash MemoryDongJin Lee, Yunjo Lee, Soyeong Na, KangOh Yun, Sungkweon Baek, Jaeduk Lee, Jaehoon Jang, Jaihyuk Song. 68 [doi]
• Effect of Off-State Stress on Data-Valid Window Margin for Advanced DRAM Using HK/MG Process TechnologyS. Lee, N. H. Lee, G. J. Kim, J. Ahn, I. H. Kim, S. Ha, S. Rhee, GH Bae, KW Lee, YS Lee, SB. Ko, S. Pae. 69 [doi]
• Low Temperature Characterization and Modeling of Hot Carrier Injection in 14 nm Si FinFETJunru Qu, Dong Liu, Bing Chen, Ying Sun, Xinze Li, Chengji Jin, Jiajia Chen, Haoji Qian, Rongzong Shen, Xiao Yu, Dawei Gao, Ran Cheng, Genquan Han. 70 [doi]
• Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETsZixuan Sun, Yongkang Xue, Haoran Lu, Pengpeng Ren, Zirui Wang, Zhigang Ji, Runsheng Wang, Ru Huang 0001. 72 [doi]
• Hot Carrier Dynamics and Electrical Breakdown Analysis in 2D Transition Metal Dichalcogenide FETsRupali Verma, Utpreksh Patbhaje, Asif Altaf Shah, Jeevesh Kumar, Rajarshi Roy Chaudhuri, Aadil Bashir Dar, Mayank Shrivastava. 74 [doi]
• A New Method of Automatic Extraction of RTN and OMI-Friendly ImplementationYu Xiao, Chenyang Zhang, Da Wang, Yongkang Xue, Pengpeng Ren, Zhigang Ji. 75 [doi]