Enrico Sangiorgi - researchr alias

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Viewing Publication 1 - 22 from 22

2025

2024

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN GateM. Millesimo, Claudio Fiegna, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Andrea Natale Tallarico. irps 2024: 1-6 [doi]

2022

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress ConditionM. Millesimo, Benoit Bakeroot, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Enrico Sangiorgi, Claudio Fiegna, Andrea Natale Tallarico. irps 2022: 10 [doi]

2020

Full Understanding of Hot Electrons and Hot/Cold Holes in the Degradation of p-channel Power LDMOS TransistorsA. N. Tallarico, Susanna Reggiani, R. Depetro, Giuseppe Croce, Enrico Sangiorgi, Claudio Fiegna. irps 2020: 1-5 [doi]

2019

2018

TCAD investigation on hot-electron injection in new-generation technologiesSusanna Reggiani, Mattia Rossetti, Antonio Gnudi, A. N. Tallarico, A. Molfese, S. Manzini, R. Depetro, Giuseppe Croce, Enrico Sangiorgi, C. Fiegna. mr, 88:1090-1093, 2018. [doi]

2017

2013

Implementation of nanoscale double-gate CMOS circuits using compact advanced transport modelsMuthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez. mj, 44(2):80-85, 2013. [doi]

2012

A methodology to account for the finger interruptions in solar cell performanceRaffaele De Rose, A. Malomo, Paolo Magnone, Felice Crupi, G. Cellere, M. Martire, D. Tonini, Enrico Sangiorgi. mr, 52(9-10):2500-2503, 2012. [doi]

2007

The Monte Carlo approach to transport modeling in deca-nanometer MOSFETsEnrico Sangiorgi, Pierpaolo Palestri, David Esseni, Claudio Fiegna, Luca Selmi. esscirc 2007: 48-57 [doi]

1993

A numerical method to compute isotropic band models from anisotropic semiconductor band structuresAntonio Abramo, Franco Venturi, Enrico Sangiorgi, Jack M. Higman, Bruno Riccò. tcad, 12(9):1327-1336, 1993. [doi]

1991

Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET sFranco Venturi, Enrico Sangiorgi, Rosella Brunetti, Wolfgang Quade, Carlo Jacoboni, Bruno Riccò. tcad, 10(10):1276-1286, 1991. [doi]

1990

Latch-up testing in CMOS IC'sRoberto Menozzi, Massimo Lanzoni, Claudio Fiegna, Enrico Sangiorgi, Bruno Riccò. jssc, 25(4):1010-1014, August 1990. [doi]

Latch-up in CMOS circuits: A reviewEnrico Sangiorgi. ett, 1(3):337-349, 1990. [doi]

1989

A general purpose device simulator coupling Poisson and Monte Carlo transport with applications to deep submicron MOSFETsFranco Venturi, R. Kent Smith, Enrico Sangiorgi, Mark R. Pinto, Bruno Riccò. tcad, 8(4):360-369, 1989. [doi]

1988

MOS:::2:::: an efficient MOnte Carlo Simulator for MOS devicesEnrico Sangiorgi, Bruno Riccò, Franco Venturi. tcad, 7(2):259-271, 1988. [doi]

1985

Two-Dimensional Numerical Analysis of Latchup in a VLSI CMOS TechnologyEnrico Sangiorgi, Mark R. Pinto, Stanley E. Swirhun, Robert W. Dutton. tcad, 4(4):561-574, 1985. [doi]

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