Joaquín Alvarado - researchr alias

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Viewing Publication 1 - 6 from 6

2013

Implementation of nanoscale double-gate CMOS circuits using compact advanced transport modelsMuthupandian Cheralathan, Esteban Contreras, Joaquín Alvarado, Antonio Cerdeira, Giuseppe Iannaccone, Enrico Sangiorgi, Benjamín Iñíguez. mj, 44(2):80-85, 2013. [doi]

2012

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETsValeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, O. Militaru, G. Berger, Denis Flandre. mr, 52(1):118-123, 2012. [doi]

2011

Characterization and modelling of single event transients in LDMOS-SOI FETsJoaquín Alvarado, Valeria Kilchytska, El Hafed Boufouss, Denis Flandre. mr, 51(9-11):2004-2009, 2011. [doi]

Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layerC. Roda Neve, Valeria Kilchytska, Joaquín Alvarado, D. Lederer, O. Militaru, Denis Flandre, Jean-Pierre Raskin. mr, 51(2):326-331, 2011. [doi]

2010

Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETsJoaquín Alvarado, E. Boufouss, Valeria Kilchytska, Denis Flandre. mr, 50(9-11):1852-1856, 2010. [doi]

2007

Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETsJoaquín Alvarado, Antonio Cerdeira, Valeria Kilchytska, Denis Flandre. mj, 38(3):321-326, 2007. [doi]

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