Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs - researchr publication

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Joaquín Alvarado, E. Boufouss, Valeria Kilchytska, Denis Flandre. Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs. Microelectronics Reliability, 50(9-11):1852-1856, 2010. [doi]

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