Eddy Simoen - researchr alias

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Viewing Publication 1 - 20 from 20

2021

Comparative Study on the Energy Distribution of Defects under HCD and NBTI in Short Channel p-FinFETsHao Chang, Longda Zhou, Hong Yang, Zhigang Ji, Qianqian Liu, Eddy Simoen, Huaxiang Yin, Wenwu Wang. irps 2021: 1-5 [doi]

Analysis of zero-temperature coefficient behavior on vertically stacked double nanosheet nMOS devicesCarlos H. S. Coelho, João Antonio Martino, Marcello Bellodi, Eddy Simoen, Anabela Veloso, Paula Ghedini Der Agopian. mj, 117:105277, 2021. [doi]

A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologiesAbhitosh Vais, B. Hsu, O. Syshchyk, H. Yu, AliReza Alian, Y. Mols, K. V. Kodandarama, B. Kunert, Niamh Waldron, Eddy Simoen, Nadine Collaert. irps 2021: 1-5 [doi]

A Fast DCIV Technique for Characterizing the Generation and Repassivation of Interface Traps Under DC/ AC NBTI Stress/Recovery Condition in Si p-FinFETsLongda Zhou, Zhaohao Zhang, Hong Yang, Zhigang Ji, Qianqian Liu, Qingzhu Zhang, Eddy Simoen, Huaxiang Yin, Jun Luo, Anyan Du, Chao Zhao, Wenwu Wang. irps 2021: 1-7 [doi]

2019

Analytical modelling and device design optimisation of epitaxial layer-based III-V tunnel FETPrabhat Kumar Dubey, Brajesh Kumar Kaushik, Eddy Simoen. iet-cds, 13(6):763-770, 2019. [doi]

Impact of Device Architecture and Gate Stack Processing on the Low-Frequency Noise of Silicon Nanowire TransistorsEddy Simoen, Alberto Vinicius Oliveira, Anabela Veloso, Adrian Vaisman Chasin, Romain Ritzenthaler, Hans Mertens, Naoto Horiguchi, Cor Claeys. asicon 2019: 1-4 [doi]

2014

Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiationMaria Glória Caño de Andrade, João Antonio Martino, Marc Aoulaiche, Nadine Collaert, Eddy Simoen, Cor Claeys. mr, 54(11):2349-2354, 2014. [doi]

2013

2012

Characterization and SPICE modeling of the CHC related time-dependent variability in strained and unstrained pMOSFETsNuria Ayala, Javier Martín-Martínez, Rosana Rodríguez, M. B. Gonzalez, Montserrat Nafría, X. Aymerich, Eddy Simoen. mr, 52(9-10):1924-1927, 2012. [doi]

An analytic method to compute the stress dependence on the dimensions and its influence in the characteristics of triple gate devicesRenan Trevisoli Doria, João Antonio Martino, Eddy Simoen, Cor Claeys, Marcelo Antonio Pavanello. mr, 52(3):519-524, 2012. [doi]

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETsValeria Kilchytska, Joaquín Alvarado, S. Put, Nadine Collaert, Eddy Simoen, Cor Claeys, O. Militaru, G. Berger, Denis Flandre. mr, 52(1):118-123, 2012. [doi]

Low-frequency noise assessment of the transport mechanisms in SiGe channel bulk FinFETsTommaso Romeo, Luigi Pantisano, Eddy Simoen, Raymond Krom, M. Togo, N. Horiguchi, Jérôme Mitard, A. Thean, Guido Groeseneken, Cor Claeys, Felice Crupi. essderc 2012: 330-333 [doi]

On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETsEddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, M. G. C. Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, C. Caillat, P. Fazan. essderc 2012: 338-341 [doi]

2007

2006

Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETSPaula Ghedini Der Agopian, João Antonio Martino, Eddy Simoen, Cor Claeys. mj, 37(8):681-685, 2006. [doi]

The temperature mobility degradation influence on the zero temperature coefficient of partially and fully depleted SOI MOSFETsL. M. Camillo, João Antonio Martino, Eddy Simoen, C. Claeys. mj, 37(9):952-957, 2006. [doi]

2004

Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiationKiyoteru Hayama, Kenichiro Takakura, Hidenori Ohyama, Abdelkarim Mercha, Eddy Simoen, Cor Claeys, Joan Marc Rafí, Michael Kokkoris. mr, 44(9-11):1721-1726, 2004. [doi]

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