Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

P. Srinivasan, F. Crupi, Eddy Simoen, P. Magnone, C. Pace, D. Misra, Cor Claeys. Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks. Microelectronics Reliability, 47(4-5):501-504, 2007. [doi]

Abstract

Abstract is missing.