Table of Contents

• Towards a Computationally Efficient Verilog-A Defect-Centric BTI Compact Model for Circuit Aging SimulationsDishant Sangani, Dieter Claes, Pieter Weckx, Ben Kaczer, Georges G. E. Gielen. 1-6 [doi]
• AI-Powered Analytics Using Empirical Data from In-Field Measurements and Reliability QualificationD. Alexandrescu, J. Athavale, L. Kennedy, S. Datta. 1-6 [doi]
• RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of TemperatureM. Millesimo, L. Valentini, Claudio Fiegna, Enrico Sangiorgi, Andrea Natale Tallarico, Matteo Borga, Niels Posthuma, Stefaan Decoutere, Benoit Bakeroot. 1-7 [doi]
• Cascode GaN Power Transistor Robust for Single Event Burnout Caused by Neutron IrradiationKen Shono, Yoshiyuki Kotani, Ronald Barr, Likun Shen, Steven Wienecke. 1-4 [doi]
• CV Characterization of Si/SiGe Heterostructures at Cryo TemperaturesF. Stampfl, Clement Godfrin, Stefan Kubicek, S. Baudot, B. Raes, Kristiaan De Greve, Alexander Grill, M. Waltl. 1-5 [doi]
• Current Dynamics during Bipolar TDDB in Galvanic Isolators based on Polymeric DielectricsM. Greatti, J. L. Mazzola, P. Vogler, C. Monzio Compagnoni, Alessandro S. Spinelli, D. Paci, F. Speroni, D. Asnaghi, M. Salina, F. Guzzi, M. Lauria, V. Marano, Gerardo Malavena. 1-4 [doi]
• Understanding of Incremental Step Pulse Programming (ISPP) Slope Degradation in 3D NAND and its Band-Engineered Trap Layer SolutionKi-Han Kim, Woo Cheol Shin, Ui Do Ji, Yeong Kwon Kim, Namju Kim, Han-Byeol Oh, Sang Hyun Oh, Byung Chul Jang. 1-6 [doi]
• Multiscale Modeling and Calibration of Hot-Carrier Stress Degradation in SiGe DRAM Peripheral MOSFETsL. Silvestri, S. Jin, W. Jeong, H. Shim, W. Yim, H. Kwon, D. Oh, S. Son, N. Zographos, N. Kim, X. W. Lin, L. Sponton, Y. Lee. 1-6 [doi]
• First Observations and Physical Insights of the Dynamic Breakdown Voltage and Overvoltage Margin Under Pulsed Conditions in β-Ga2O3Based DevicesHarsh Raj, Mayank Shrivastava. 1-4 [doi]
• Enhanced Memory Performance in Ferroelectric NAND Applications: The Role of Tunnel Dielectric Position for Robust 10-Year RetentionPrasanna Venkatesan Ravindran, Andrea Padovani, Lance Fernandes, Priyankka Gundlapudi Ravikumar, Chinsung Park, Huy Tran, Zekai Wang, Hari Jayasankar, Amrit Garlapati, TaeYoung Song, Hang Chen, Winston Chern, Zheng Wang, Kijoon Kim, Jongho Woog, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Shimeng Yu, Suman Datta, Luca Larcher, Gaurav Thareja, Asif Khan. 1-7 [doi]
• Impact of Hydrogen Incorporation on Performance and PBS Instability in Ultrathin ALD-InOxFETsC. T. Chen, T. Irisawa, S. Migita, Y. Morita, H. Ota, T. Maeda, K. Toprasertpong. 1-6 [doi]
• Copper Damascene Based Heterogeneous Integration of GaN with CMOS on 200 mm Si Substrates (Invited)Jeffrey LaRoche, Lovelace Soirez, Eduardo Chumbes. 1-4 [doi]
• Trap Behaviors and Degradation Modeling in Positive Bias Temperature Instability of Back Gated IGZO TransistorsLiang Xiang, Gangping Yan, Yunfei Shi, Hong Yang, Shangbo Yang, Gaobo Xu, Xiaolei Wang, Guilei Wang, Huaxiang Yin, Chao Zhao, Jun Luo, Wenwu Wang 0006. 1-5 [doi]
• Temperature and Drift-Aware High-Level PCM-based Array Model for Reliable Hardware IMC DesignV. Viollet, E. Esmanhotto, M. Allegra, Matteo Baldo, Guillaume Prenat, Lorena Anghel, X. Lecoq. 1-4 [doi]
• Reliability of a 3.3 kV SiC MOSFET .XTTobias N. Wassermann, Florian Holley, Paul Salmen. 1-5 [doi]
• Fast CV MSM Technique for Comprehensive Analysis of Bulk Trapping in Low-K Carbon-Doped DielectricsTadeu Mota Frutuoso, William Vandendaele, A. Bond, F. Bringuier, V. Lapras, M. C. Cyrille, Claire Fenouillet-Béranger, B. Duriez, Xavier Garros. 1-7 [doi]
• Reliability Study of La- and Al-Doped ZrO2 Dielectrics for High Density MIMCAP ApplicationsEmmanuel Chery, Lucie Sourgen, Jacopo Franco, Mihaela Ioana Popovici, Eric Beyne. 1-7 [doi]
• Reliability Characterization Using Accelerated Methods of 1Tb 9th-Gen VNAND for TLC/QLC applicationsGang-Jun Kim, Taehun You, Sewon Jeon, Seung Hwan Kwak, Hwangju Song, Shinhyung Kim, Nam-Jae Kim, Jaeyeop Ahn, Hyuk Park 0006, Seonhaeng Lee, Nam-Hyun Lee, Young-Hoon Cho, Sang Won Hwang, Yuchul Hwang, Seungbum Ko, Sangwoo Pae. 1-4 [doi]
• Effect of High Temperature RF Stress on the Trapping Behavior of Carbon Doped AlN/GaN/AlGaN HEMTsLyes Ben Hammou, François Grandpierron, Elodie Carneiro, Katir Ziouche, Etienne Okada, Farid Medjdoub, Gilles Patriarche. 1-8 [doi]
• New Burnout Failure at the Chip Edge: Analysis and Preventive Design by a Novel Experimental ApproachSeungmin Lee, Taegon Lee, Gaeun Kim, Kwang-Ryul Lee, Eunji An, Sekwon Hong, Sungjun Kim, Soonkwan Kang, Seokwoo Hong, Hwan Cha, Minkyu Kang, Jaesun Yun, Moongeun Kim, Woongseop Lee, Joonsung Lim, Joonyoung Oh, Kyungyoon Noh, Seungwan Hong, Sunghoi Hur. 1-7 [doi]
• A Novel D2 Plasma Treatment for Defect Passivation: From Modeling to Process OptimizationSara Vecchi, Vikram Bhosle, Andrea Palmieri, Davide Cornigli, Fabrizio Buscemi, Andrea Padovani, Deven Raj, Andrew Cockburn, Lucien Date, Gaurav Thareja, Federico Nardi, Luca Larcher. 1-5 [doi]
• Modulating Competition between Defect Generation and Annihilation in Dielectric Breakdown Showing a Full Range of Reverse, Diminishing, and Forward Area Scaling TrendsErnest Y. Wu, Paul Jamison, Steven Consiglio, Takaaki Tsunomura, Takashi Ando. 1-8 [doi]
• Cryogenic Investigation of Vertical Charge Loss in 3D NAND Flash MemoriesD. G. Refaldi, Gerardo Malavena, Luca Chiavarone, N. Gagliazzi, Alessandro S. Spinelli, C. Monzio Compagnoni. 1-7 [doi]
• Enhancing Bias Stress Stability and VTH Recovery of n-Type SnO2: Ge Thin Film TransistorJay Singh, Suman Gora, V. P. K. Bhashini, Amab Datta. 1-5 [doi]
• Demonstrated Reliability of the Ideal Switch® - Glass Based MEMS DeviceJ. Brewer, C. Nassar, A. Shorey, Y. Gu. 1-5 [doi]
• Investigation of Cryogenic Aging in 28 nm CMOS: Suppression of BTI and HCD in Circuits and SRAMJavier Diaz-Fortuny, Mahdi Benkhelifa, Alexander Grill, Erik Bury, Robin Degraeve, Ben Kaczer, Hussam Amrouch. 1-7 [doi]
• Gate Stack Development for Next Gen High Voltage Periphery DRAM DevicesJ. P. Bastos, Jacopo Franco, Barry J. O'Sullivan, Yusuke Higashi, Adrian Chasin, J. Ganguly, Hiroaki Arimura, Alessio Spessot, M. S. Kim, N. Horiguchi. 1-8 [doi]
• Proposal to Achieve the Ultimate Holding Voltage Tunability in Silicon Controlled Rectifiers (SCRs) for a Wide Range of ESD Protection ApplicationMayank Yadav, Mahesh Vaidya, Mayank Shrivastava. 1-5 [doi]
• Chip Board Package Interaction Reliability for Large Size FCBGA PackageRichard Rao, Sean Hsu, Ivan Tan, Steve Yang, Shrinath Ramdas, Dwayne R. Shirley, Kevin Caffey. 1-6 [doi]
• Dynamic Reverse Bias Reliability Testing of SiC MOSFETsVamsi Mulpuri, Vishank Talesara, Kailun Zhong, Siddarth Sundaresan, Navitas Semiconductor. 1-4 [doi]
• I/O Circuit and Sub-5V ESD Protection for Advanced Bonding InterfacesM. Krilcic, Adrijan Baric, S.-H. Lin, Tomislav Markovic, N. Pantano, Marko Simicic. 1-6 [doi]
• Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson RecoveryBernhard Ruch, Rajarshi Roy Chaudhuri, Boris Butej, Joao Gomes, Manuel Stabentheiner, Korbinian Reiser, Christian Koller, Dionyz Pogany, Clemens Ostermaier, Michael Waltl. 1-6 [doi]
• TDDB Reliability Improvement of Low Thermal Budget RMG StacksG. Molinaro, Hiroaki Arimura, S. Sacchi, Andrea Vici, Robin Degraeve, Ben Kaczer, Naoto Horiguchi, M. Houssa, Jacopo Franco. 1-6 [doi]
• The Importance of Gate Length Choice on NBTI Qualification in GAA-SNS FETs Under Normal and Overclocking ConditionsArnav Shaurya Bisht, Souvik Mahapatra. 1-4 [doi]
• Machine Learning-based Condition Monitoring from Power Cycling Data for Silicon Carbide Power Inverter ModulesJ. Olschewski, M. Hoppe, E. Kusmenko, K. Knobloch, A. Martin, M. Tüllmann, M. Pfost. 1-6 [doi]
• The Role of Materials and Defects on the Electroforming of Metal/Oxide/Metal StacksStephan Menzel, Nils Kopperberg. 1-9 [doi]
• Advanced Multivariate Outlier Detection for Automotive Road-to-Zero Defect StrategyAshley Hua, Huixian Wu. 1-6 [doi]
• Chip Scale Packaging and Its Failure Analysis Challenges (invited)Susan Li. 1-9 [doi]
• HTGB and DGS Reliability Assessment of e-mode GaN-HEMTs with Ferroelectric Gate StackAndrea Natale Tallarico, M. Millesimo, U. Ibrar, Enrico Sangiorgi, Claudio Fiegna, T. Y. Yang, J.-S. Wu, H. Iwai, E. Y. Chang. 1-6 [doi]
• Analytical Modeling of RTN with Short Dwell Time for Strict Memory Bit Error EstimationKazuya Uejima, Kenzo Manabe, Yoshihiro Hayashi. 1-9 [doi]
• Retention Analysis of Ferroelectric FETs with Gate-Side Injection for Vertical NAND StorageYixin Qin, Saikat Chakraborty, Zijian Zhao 0001, Sizhe Ma, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni 0004. 1-6 [doi]
• TDDB Characterization of High-k Gate Dielectric on a Sub-nanosecond TimescaleMatthew Drallmeier, Elyse Rosenbaum. 1-8 [doi]
• Overview of Reliability in Scaling Embedded STT-MRAMHyunsung Jung, Yoon-Jong Song, Seungpil Ko, Jeong-Heon Park, Su-Jin Ahn. 1-6 [doi]
• Investigation of the Time-Dependent BTI-induced Degradation Distribution for Ring Oscillators in Ultra-Long-Term Stress ConditionsTomoharu Kishita, Ryo Kishida, Kazutoshi Kobayashi. 1-4 [doi]
• Estimation of Product Lifetime with Highly Varying Die TemperatureJae-Gyung Ahn, Md Malekkul Islam, Gamal Refai-Ahmed, Bhoomika Devaru Hedge, Guan-Yu Lin, Po-Chiao Chang, Ping-Chin Yeh, Jonathan Chang. 1-6 [doi]
• Multi-Level RTN with Certain Regularities in Oxide-RRAM: Experiments, Defect Dynamics and 3D Multi-Physics ModelingDejiang Mu, Pan Liu, Zijian Zhou, Zifei Cai, Jian Zhang, Kanhao Xue, Zhigang Ji, Xiangshui Miao, Xingsheng Wang. 1-6 [doi]
• Predicting Neutron SERs from Alpha-Ray Test Results Through SEU Physics Parameter ExtractionKozo Takeuchi, Takashi Kato, Ryunosuke Nakamura, Daisuke Kobayashi. 1-6 [doi]
• Machine Learning Powered Single Event Latch-up (SEL) Failure Rate Prediction Methodology in Advanced Bulk FinFET TechnologyTzu-Hao Chiang, Chien-Yao Huang, Jam Wem Lee, Kuo-Ji Chen, Ming-Hsiang Song. 1-5 [doi]
• TCAD Based Isolation of Self-Heat Enhanced HCD and NBTI in GAA SNS p-FETKaransingh Thakor, Rai Sambhav, Rashmi Saikia, Souvik Mahapatra. 1-7 [doi]
• Small Signal Analysis of Degradation and Breakdown in TMD FETsUtpreksh Patbhaje, Rupali Verma, Mayank Shrivastava. 1-8 [doi]
• Leveraging Large-Scale TLC 3D NAND Flash Characterization to Investigate Early Lifetime Reliability of SSDs through Extreme Value StatisticsRino Micheloni, Luca Crippa, Alessia Marelli, Lorenzo Zuolo, Piero Olivo, Cristian Zambelli. 1-6 [doi]
• Modeling BTI Reliability in CMOS DRAM Periphery Device: A Review of BTI Analysis Tool (BAT)A. Subirats, M. Samiee, G. Ferrari, U. Sharma, T. Imamoto, M. Yokomichi, S. Srivastava, K. Florent, T. Owens, A. S. Bisht, S. Mahapatra. 1-6 [doi]
• Modeling Dynamic Interplay Between Charge Traps and Polarization for Memory Window Enhancement in Gate Injection LayersMinji Shon, Chinsung Park, Prasanna Venkatesan Ravindran, Lance Fernandes, Kijoon Kim, Jongho Woo, Suhwan Lim, Kwangsoo Kim, Wanki Kim, Daewon Ha, Suman Datta, Asif Khan, Shimeng Yu. 1-5 [doi]
• Hot Carrier Degradation and performance boost on Si Channel nFET Gate-All-Around Nanosheet DevicesH. Zhou, M. Hasanuzzaman, S. D. Suk, S. Emans, S. Siddiqui, R. Robison, R. Vega, M. Wang, Yasir Sulehria, S. Mochizuki, C. Durfee, Oleg Gluschenkov, N. Fokas, G. Bajpai, E. Leobandung, R. Mo, R. Krishnan, K. Okada, H. Miki, L. Qin, C. Child, T. Standaert, K. Zhao, D. Sohn, Y. Fukuzaki, K. Tomida, D. Guo, H. Bu. 1-8 [doi]
• Electromigration Assessment in Power Grids with Account of Non-Uniform Temperature DistributionArmen Kteyan, J. Choy, Valeriy Sukharev, Stéphane Moreau, Y. Yi, R. Bloom, C. Kim. 1-9 [doi]
• Comprehensive Reliability Assessment of WOx Engineering for Temperature-Resilient HfZrO2 FeCAPEunjin Kim, Hyoungjin Park, Jiae Jeong, Seokjae Lim, Jiyong Woo. 1-5 [doi]
• A Critical Investigation of Hot Carrier Degradation in Low VTNMOSFETs in DRAMN. Choudhury, S. Lee, D. Son, G. Yang, G. J. Kim, N. H. Lee, Y. C. Hwang, SB. Ko, S. Pae. 1-4 [doi]
• New Insights into TDDB in FinFET Based on Strain Analysis at the Atomistic ScaleZuoyuan Dong, Zixuan Sun, Lan Li, Zirui Wang, Changqing Ye, Yu Yao, Jialu Huang, Xiaomei Li, Xing Wu, Runsheng Wang. 1-4 [doi]
• Influence of Process Integration on pBTI Degradation in Analog SOI nMOSFETsAbygaël Viey, William Vandendaele, P. Kouaté Wafo, Xavier Garros, Luigi Basset, F. Ponthenier, Joris Lacord, R. Fillon, X. Federspiel, D. Roy, S. Joblot, Dominique Golanski. 1-6 [doi]
• Bidirectional Threshold Voltage Shift After Positive Bias Temperature Instability of p-GaN HEMTs at Cryogenic TemperatureChuan Song, Wen Yang, Weijian Wang, Huaxing Jiang, Sheng Jiang, Xiang Yi, Bin Li, Zhao Qi. 1-5 [doi]
• Demonstration of the Benefits of Measuring SiC MOSFET BTI using a Triple Sense MethodDaniel J. Lichtenwalner. 1-5 [doi]
• A Half-Bit-Per-Cell Strategy for Enhancing Flash Memory Reliability in Harsh EnvironmentsRuibin Zhou, Yuhan Wang, Jian Huang, Zecheng Xu, Xianping Liu, Xinrui Zhang, Zhiyi Yu. 1-9 [doi]
• Resistive-Gate RAM: An 1TnR Architecture Feasible for Scaling Beyond 16nm CMOS GenerationC.-H. Sung, M. J. Huang, Y. J. Li, Y.-T. Yang, Y. R. Liu, P. H. Shih, J.-C. Guo, Steve S. Chung. 1-6 [doi]
• Introduction to Voltage-Ramping Wafer Level Electromigration Method and Current Exponent Correction Factor for Co-Capping Metal LinesDa Yong Shin, Hyunjun Choi, Joosung Kim, Myungsoo Yeo, Miji Lee, Taiki Uemura, Shin-Young Chung, Jong-Ho Lee. 1-5 [doi]
• Off-State TDDB Degradation of RC-Features and Threshold Voltage on Advanced FinFETs from RF Measurements for 5G ApplicationsAlan Y. Otero-Carrascal, Edmundo A. Gutiérrez-D., Reydezel Torres-Torres, Oscar Huerta-Gonzalez, P. Srinivasan 0002, Héctor Uribe. 1-6 [doi]
• Evidence for Avalanche Operation in Sub-Micrometer Power GaN HEMTs with p-GaN GateRiccardo Fraccaroli, Matteo Dell'Andrea, Manuel Fregolent, Mirco Boito, Carlo De Santi, Gaudenzio Meneghesso, Enrico Zanoni, Eleonora Canato, Isabella Rossetto, Alessio Pirani, Giansalvo Pizzo, Cristina Miccoli, Alfio Russo, Maria Eloisa Castagna, Ferdinando Iucolano, Matteo Meneghini. 1-5 [doi]
• Cycling Induced Imprint Phenomenon at Intermediate State used for Multi-Level Operation in HfO2-FeFETViktoria Schlykow, Kunifumi Suzuki, Yoko Yoshimura, Hidesato Ishida, Kiwamu Sakuma, Kazuhiro Matsuo, Masumi Saitoh, Reika Ichihara. 1-5 [doi]
• Observation of Self-heating Process in STT-MRAM and Its Implication in Device OperationsZhangsheng Lan, Yiming Qu, Shifan Gao, Yi Wei, Yuhao Chen, Wenchao Yan, Ming Wang, Xiaolei Yang, Shikun He, Yi Zhao. 1-6 [doi]
• Novel Stress Migration Failure Analysis by EBSD-KAMChih-Feng Ku, Yu-lin Li, Yu-Chiao Lin, C. K. Kao, Ting-Ying Shih, Huei-Wen Yang. 1-4 [doi]
• Investigation Into the Moisture Degradation Mechanism of Integrated Stacks Using New Moisture Sensor DesignB. Ayoub, G. Imbert, F. Belfis, T. Parrassin, Sébastien Gallois-Garreignot, L. Mischler, Geneviève Duchamp, Hélène Frémont. 1-7 [doi]
• Comprehensive Study of Thermal Neutron SER in Bulk-Planar, Bulk-FinFET, FDSOI-Planar, and Bulk-GAA Technology, Evaluated at HANAROTaiki Uemura, Jongyul Kim 0003, Sungsoo Kim, Shinyoung Chung, Jong-Ho Lee. 1-7 [doi]
• Modelling predictive reliability of Systems embedding EEE parts (Invited): The FIDES method adapted for Space applicationsStephanie Bourbouse. 1-7 [doi]
• CoWoS Package Reliability Risk Assessment & Mitigation from Mechanical PerspectivesChing-Ting Liu, Yao-Chun Chuang, Jyun-Lin Wu, Jia-Shen Lan, Chang-Fu Han, Chia-Hua Chang, Jia-Ming Yang, Yu-sheng Lin, Chen Wei Li, Ryan Lu. 1-6 [doi]
• Investigating Read-After-Write Delay in Ferroelectric FET with Gate-Side InjectionSizhe Ma, Saikat Chakraborty, Yixin Qin, Zijian Zhao 0001, Jiahui Duan, Moonyoung Jung, Kijoon Kim, Suhwan Lim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Vijaykrishnan Narayanan, Jaydeep P. Kulkarni, Kai Ni 0004. 1-6 [doi]
• Understanding Correlation Between Memory Window Closure, Leakage and Read Delay Effects for FEFET Reliability Improvement: Role of IL and FE TrapsPriyankka Gundlapudi Ravikumar, Andrea Padovani, Prasanna Venkatesan Ravindran, Chinsung Park, Nashrah Afroze, Mengkun Tian, Suman Datta, Shimeng Yu, Luca Larcher, Gaurav Thareja, Asif Khan. 1-5 [doi]
• A Comparative Analysis of Aging Effects on Computing-in-Memory Systems in 28nm CMOSShida Zhang, Wei-chun Wang, Carlos Tokunaga, Saibal Mukhopadhyay. 1-6 [doi]
• Impact of Al-based Dipole Formation on Gate Stack Integrity and ReliabilityBruno Coppolelli, Davide Cornigli, Zheyuan Chen, Andrea Padovani, Sara Vecchi, Yanliu Dang, Luc Thomas, Luca Vandelli, Jianxin Lei, Naomi Yoshida, Renu Whig, Federico Nardi, Gaurav Thareja, Luca Larcher, Milan Pesic. 1-8 [doi]
• Effects of Temperature and Device-to-Device Variability in pFET-Based Bias Temperature Instability Reservoir ComputingYuanyang Guo, Robin Degraeve, Pablo Saraza-Canflanca, Ben Kaczer, Erik Bury, Ingrid Verbauwhede. 1-7 [doi]
• Power-Aware Mitigation of Logic Soft Error Rates at the 3-nm Bulk FinFET NodeJenna B. Kronenberg, Y. Xiong, Nicholas J. Pieper, Dennis R. Ball, Bharat L. Bhuva. 1-5 [doi]
• Impact of Gate Metal Work Function on 1/f Noise in RMG MOSFETsR. Asanovski, Hiroaki Arimura, J. Ganguly, Pierpaolo Palestri, Alexander Grill, Ben Kaczer, Naoto Horiguchi, Luca Selmi, Jacopo Franco. 1-6 [doi]
• Self-Heating Effects in FDSOI Transistors at Cryogenic Temperature: A Spatial and Temporal Experimental Study (Invited)Mikaël Cassé, Flávio Enrico Bergamaschi, Quentin Berlingard. 1-7 [doi]
• Latch-Up Over-Current Protection Design with Power Restarted FunctionShih-Cheng Huang, Ming-Dou Ker. 1-7 [doi]
• High-Resolution X-Ray Imaging of Controlled Microcrack Steering in BEoL Stacks (Invited)Ehrenfried Zschech, Kristina Kutukova. 1-6 [doi]
• Reliability-Ensured and Fast (xRRAMYunsur Kim, Seonuk Jeon, Seokjae Lim, Jiyong Woo. 1-5 [doi]
• Methodology of Predicting Package Early FailureHoward Gan, Antai Xu, Jeffrey Zhang 0008. 1-6 [doi]
• Investigation of the Impact of Hydrogen Defects on the VT shift in Back-Gate IGZO TFTsMohammad Fathi, Md Abdullah Al Mamun, Rodolfo A. Rodriguez-Davila, Shumiya Alam, Jongchan Kim, Tanvir Haider Pantha, Milan Pesic, Manuel Quevedo-Lopez, Kyeongjae Cho, Sourav Dutta, Chadwin D. Young. 1-5 [doi]
• Electromigration Performance of Cu Bumps in Various ConfigurationsJui-Shen Chang, Chung-Yu Chiu, Ching-Ting Liu, Chen-Nan Chiu, Yao-Chun Chuang, Ryan Lu. 1-6 [doi]
• Radiation-Resilient Amorphous Indium Oxide FEFETs for Embedded Nonvolatile MemorySharadindu Gopal Kirtania, Faaiq G. Waqar, Dyutimoy Chakraborty, Jaewon Shin, Eknath Sarkar, Justin Reiss, Jason Dean Yeager, Douglas E. Wolfe, Shimeng Yu, Suman Datta. 1-9 [doi]
• Drain-side TDDB for RF applicationsGuido T. Sasse, Dieter Lipp. 1-6 [doi]
• A Study on the Origin of Dynamic Charge Loss of Next Generation DRAM Cell Array TransistorMoonyoung Jeong, Hyungjun Noh, Sangho Lee, Yootak Jun, Jeonghoon Oh, Jemin Park, Jaihyuk Song. 1-4 [doi]
• Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current StressAlberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, G. J. Gomez Garcia, A. Feng, T. Grasser, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini. 1-5 [doi]
• Investigating the Automotive HPC Safety Architecture for Software Defined VehicleJingu Park, Jongil Jeong, Byungju Kim, Sehwan Park, Myungmin Lee, Donghwa Yun, Namyong Park. 1-6 [doi]
• Enhanced Dye and Pull Analysis for CSP Package TypesSinai Galvan, Daniel J. D. Sullivan. 1-4 [doi]
• Estimation of Remaining Useful Life from the Aging Degradation in IC Performance ParametersJiho Lee, Jiwon Kim, Seyoung Kim, Young-Yun Lee, Kanghyun Seo, Jung Yun Choi. 1-6 [doi]
• Recent Developments in EOTPR Towards a Fully Automated Tool for High Volume Failure AnalysisTom White, Jesse Alton, Brett Gibson, Martin Igarashi, Joy Y. Liao, Timothy Pham, Howard L. Marks. 1-5 [doi]
• When Variability Meets SecurityRafael Castro-López, Javier Diaz-Fortuny, Elisenda Roca, Francisco V. Fernández 0001. 1-9 [doi]
• Impact of Non-ideal Reliability Characteristics of SiOx p-Bit for Complex Optimization Problem SolverJihyun Kim, Hyeonsik Choi, Jiyong Woo. 1-6 [doi]
• Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFTSimon Van Beek, Adrian Vaisman Chasin, Subhali Subhechha, Harold Dekkers, Nouredine Rassoul, Yiqun Wan, Hongwei Tang, Joao P. Bastos, Attilio Belmonte, Gouri Sankar Kar. 1-7 [doi]
• New Loss Function for Learning Dielectric Thickness Distributions and Generative Modeling of Breakdown LifetimeWeiman Yan, Ernest Wu, Elyse Rosenbaum. 1-9 [doi]
• Demystifying the Use of IC Plastic packages for Space ApplicationsMd. Asaduz Zaman Mamun, Greta Terzariol, Luke Fortner, Amar Mavinkurve, Muhammad Ashraful Alam. 1-4 [doi]
• The Opportunity of Anti-ferroelectrics in FeFET for Emerging Non-Volatile Memory ApplicationsHyojun Choi, Giuk Kim, Hunbeom Shin, Yunseok Nam, Sanghun Jeon, Kwangsoo Kim, Suhwan Lim, Jongho Woo, Wanki Kim, Daewon Ha, JinHo Ahn. 1-6 [doi]
• Bridging the Performance and Reliability Gap of GaN-on-Si with GaN-on-SiC RF HEMTs by Efficient Electric Field Management Using a Novel p-type Oxide PassivationMohammad Ateeb Munshi, Saniya Syed Wani, Mehak Ashraf Mir, Anup Thakare, Mayank Shrivastava. 1-5 [doi]
• Improved Layout Style on Diode- Trigger SCR for Low-C ESD ProtectionChen-Yu Liang, Ming-Dou Ker. 1-5 [doi]
• Novel Linear Model for OFF-State Stress Causing Stand-By Current of Advanced VNAND ChipH. Park, G. J. Kim, N. J. Kim, J. Ahn, T. You, Y. Kang, M. Yoon, S. Lee, N. H. Lee, S. Hwang, YC Hwang, SB. Ko, S. Pae. 1-6 [doi]
• Impact of Mechanical Stress on IGZO TFTs: Enhancing PBTI DegradationK. Vishwakarma, K. Lee, Anastasiia Kruv, Adrian Vaisman Chasin, Michiel J. van Setten, C. Pashartis, Oguzhan O. Okudur, M. Gonzalez, Nouredine Rassoul, A. Belmonte, Bem Kaczer. 1-6 [doi]
• Thermo-Mechanical Stress and Its Effect on the Fabrication and Reliability of Cu-SiO2 Hybrid Bonds for 3D IC Heterogeneous Integration (Invited)Chih Chen, Shih-Chi Yang, You-Yi Lin, Huai-En Lin, Dinh-Phuc Tran. 1-7 [doi]
• Multi-Scale Modeling-Driven Material to Device Co-Optimization of Ferroelectric Capacitors with Oxygen Reservoir Layer (ORL) for Improved EnduranceAndrea Padovani, Nashrah Afroze, Yu-Hsin Kuo, Priyankka Gundlapudi Ravikumar, Prasanna Venkatesan Ravindran, Mengkun Tian, Asif Khan, Jihoon Choi, Jun-Hee Lee, Luca Larcher, Gaurav Thareja. 1-6 [doi]
• Reliability Qualification Challenges and Flow for Analog Qualification Test VehicleNisha Gupta, Anuj Gupta, Shobhna Shukla, Janit Kumar, Philippe Roche. 1-6 [doi]
• Novel Trigger Circuit & SCR Device Co-Engineering Based Local (I/O-VSS & I/O-VDD) ESD Clamp Concepts with Improved Latch-Up Susceptibility, Lower Leakage and Lower Capacitance for Ultra High Speed I/OsMitesh Goyal, Mukesh Chaturvedi, Harihar Nath, Mahesh Vaidya, Mayank Shrivastava. 1-8 [doi]
• A Physics-Based Electromigration Assessment of Analog CircuitsJ.-H. Choy, Armen Kteyan, R. Kang, S. Jo, Valeriy Sukharev, S. Choi, J. Passage, I. Kühn, Markus Herklotz, M. Gall. 1-6 [doi]
• Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D IntegrationChun-An Shih, Mir Md Fahimul Islam, Sumi Lee, Peide D. Ye, Muhammad Ashraful Alam. 1-6 [doi]
• Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning FrameworkYusuke Higashi, Anirudh Varanasi, Philippe J. Roussel, Pablo Saraza-Canflanca, J. P. Bastos, Alexander Grill, E. Catapano, R. Asanovski, Jacopo Franco, Ben Kaczer, Adrian Chasin, Devin Verreck, S. Ramesh, Laurent Breuil, Antonio Arreghini, S. Rachidi, Y. Jeong, Geert Van den bosch, Maarten Rosmeulen, Robin Degraeve. 1-6 [doi]
• Cost-Effective Assessment of Neutron-Induced SER Using Single Proton Irradiation Test with Fixed Correlation FactorTaiki Uemura, Sungsoo Kim, Shinyoung Chung, Jong-Ho Lee. 1-6 [doi]
• Multilevel Variability and Epistemic Uncertainty Analysis of Reliability Physics Models Through Hierarchical Probabilistic ModellingIan Hill, André Ivanov. 1-6 [doi]
• Observation of Kink effect in Carbon-doped GaN-on-Si HEMTs for Power ApplicationsPallavi Kumari, Sayak Dutta Gupta, Amitava Dasgupta, Nandita DasGupta. 1-5 [doi]
• A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate DielectricsErnest Y. Wu, Richard G. Southwick, Baozhen Li. 1-10 [doi]
• Impact of Al-doping on Al: HfO2Dielectric Reliability in MIM CapacitorsC. Fohn, F. Zharfan, Emmanuel Chery, Kris Croes, Michele Stucchi, V. Afanas'ev. 1-8 [doi]
• Machine Learning-Assisted Modeling of AC Stress-Induced Bias Temperature Instability in Oxide Channel Transistors for 2T Gain Cell eDRAMJungyoun Kwak, Chengyang Zhang, Gyujun Jeong, Omkar Phadke, Sharadindu Gopal Kirtania, Junmo Lee, Suman Datta, Shimeng Yu. 1-4 [doi]
• Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias InstabilityHao Yu, R. ElKashlan, M.-C. Tsai, Y. Yang, Mamoun Guenach, Y.-C. Kuo, S. Yadav, B. O'Sullivan, A. Rathi, A. Gupta, D. Xiao, Claude Desset, AliReza Alian, Uthayasankaran Peralagu, V. Afans'ev, T.-L. Wu, Bertrand Parvais, Nadine Collaert. 1-6 [doi]
• Failure Mechanism and Unified Endurance Model of Embedded MRAM Towards Cache ApplicationY. H. Chen, Y. S. Chen, Y. C. Ong, Y. L. Chu, K. F. Huang, Y.-J. Lee, C. Y. Wang, C. Y. Wu, W. H. Chuang, Allen Y. J. Wang, K. C. Huang, Harry Chuang. 1-6 [doi]
• Interfacial GaOx in $\text{Al}_{2}\mathrm{O}_{3}/n-\text{GaN}$ MOS Structures Studied by Quasi-Static CV and ToF-SIMSB. D. Rummel, C. E. Glaser, J. A. Ohlhausen, J. P. Klesko, M. L. Meyerson, C. Remple, R. J. Kaplar. 1-10 [doi]
• Comprehensive Analysis of DC, Pulsed, and RF Performance of Submicron GaN-on-Si MIS-HEMTs Under Gamma RadiationAnant Johari, Chin-Ya Su, Der-Sheng Chao, Ankur Gupta, Rajendra Singh, Tian-Li Wu. 1-6 [doi]
• Reliability Performances Tuning in Ge-rich GeSbTe Phase-Change Memory Thanks to Multilayered Ge//GeSbTe StacksN. A. Nguyen, O. Daoudi, Mathieu Bernard, L. Fellouh, M. Tessaire, C. Sabbione, Z. Saghi, T. Monniez, C. De Camaret, Emmanuel Nolot, Guillaume Bourgeois, A. Salvi, S. Gout, François Andrieu, Gabriele Navarro. 1-5 [doi]
• Read Voltage Dependency of Random Telegraph Noise in the Intermediate State of TaOx-based ReRAMKenshin Yamauchi, Naoko Misawa, Hisashi Shima, Yasuhisa Naitoh, Hiroyuki Akinaga, Chihiro Matsui, Ken Takeuchi. 1-6 [doi]
• Positive Bias Temperature Instability in Polysilicon/SiO2 PMOS Transistors for Analog High Precision ApplicationsDhanoop Varghese, Vijaya Vemuri, Arif Sonnet, Vijay Reddy, Srikanth Krishnan, Vivek Varier, Cheuk Yu, Srinivas Pulijala. 1-6 [doi]
• Defect Dynamics and Flicker Noise in Ferroelectric Field Effect Transistors at Cryogenic TemperaturesShouzhuo Yang, Yannick Raffel, Ricardo Olivo, Raik Hoffmann, David Lehninger, Oliver Ostien, Maik Simon, Konrad Seidel, Thomas Kämpfe, Maximilian Lederer, Shouzhuo Yang, Gerald Gerlach, Thomas Kämpfe. 1-4 [doi]
• Compact MEOL OxRAM with 14 Conductance Levels for Dense Embedded Inference ComputingJ. Minguet Lopez, Sylvain Barraud, Manon Dampfhoffer, Aurelie Souhaité, T. Dubreuil, J.-M. Pedini, C. Comboroure, A. Gharbi, F. Boulard, C. Castan, A. Lambert, François Andrieu. 1-6 [doi]
• Opposite Impact of Temperature Difference Direction on Electromigration Failure in N-type Versus P-type MetalYizhan Liu, Chenalin Ye, Yuanzhao Hu, Shuhan Wang, Zheng Zhou, Xiaoyan Liu. 1-4 [doi]
• Design-Technology-Reliability Co-Optimization for MRAM-OTP Integration - A Methodological ApproachY. C. Ong, Y. H. Chen, H. H. Wang, J.-Q. Liang, Y. S. Chen, Jarcle Huang, T.-W. Chiang, J. C. Huang, C. H. Weng, C. Y. Wang, Bruce P. H. Lee, Allen Y. J. Wang, K. C. Huang, Harry Chuang. 1-6 [doi]
• Failure Analysis of Particle Contamination in BatteryYuanqin Liu, Kelly Prochaska, Dogancan Sari, Daniel J. D. Sullivan. 1-5 [doi]
• 2@0.8V) HZO by Dielectric-Selective Microwave AnnealingHunbeom Shin, Giuk Kim, Sujeong Lee, Geonhyeong Kang, Hyojun Choi, Taeseung Jung, Sanghun Jeon, Hyung-Jun Kim, JinHo Ahn. 1-9 [doi]
• Gate Current Stress for Detecting Neutron-Induced Degradation in SiC Power MOSFETsK. Niskanen, Arto Javanainen, Heikki Kettunen, C. Cazzaniga, M. Kastriotou, C. Frost. 1-5 [doi]
• Design Considerations for Long-Term Reliability of Outdoor Electronic Assemblies (Invited)Qiming Zhang, Farooq Siddiqui. 1-6 [doi]
• Investigation on Temperature-Dependent Resistance States of 40nm MLC-RRAM MacroHaokai Guan, Yulin Feng, Shichao Zhong, Linbo Shan, Kefan Tao, Peng Huang 0004, Zongwei Wang 0001, Lei Sun, Lifeng Liu, JinFeng Kang, YiMao Cai. 1-7 [doi]
• Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTsAmratansh Gupta, Hao Yu, Sachin Yadav 0001, AliReza Alian, Uthavasankaran Peralagu, E.-San Jang, Ying-Chun Kuo, Nadine Collaert, Bertrand Parvais. 1-6 [doi]
• Conductance Variation-Assisted Adversarial Attack Robustness on 40nm TaOx-based ReRAM CiMKenshin Yamauchi, Naoko Misawa, Satoshi Awamura, Masahiro Morimoto, Chihiro Matsui, Ken Takeuchi. 1-6 [doi]
• Advanced Characterization of p/n Junctions in SiCG. Johnson, A Rummel, H. Stegmann, P. Barbarino, C. Poltronieri, G. Sciuto, M. Astuto, Giancarlo Calvagno, R. Ricciari. 1-3 [doi]
• Application-based Modeling of I/O ReliabilityM. D. Shroff, J. Satasia, C. Lu, K. Xie, Z. Y. Liu, L. Zhang, R. Peng, J. Jiang, W. Zhao, G. Liu, R. Pavlanin, S. Kala-Janssen, R. Ye, H. Sanchez, D. Bearden, C. Le Cam, A. Patel, C. Magnella, C. Richards-Chacon. 1-6 [doi]
• Leakage and TDDB Mechanisms in 18 nm Pitch Direct Metal Etch Ru Interconnects with AirgapsAlicja Lesniewska, Y. Fang, G. Delie, Philippe Roussel, Koen Van Sever, Emmanuel Chery, O. Varela Pedreira, Ivan Ciofi, S. H. Park, Zsolt Tokei, Kris Croes. 1-6 [doi]
• A Carrier-Energy-Based Compact Model for Hot-Carrier Degradation Implemented in Verilog-ADishant Sangani, Michiel Vandemaele, Stanislav Tyaginov, Erik Bury, Ben Kaczer, Georges G. E. Gielen. 1-8 [doi]
• A new S-parameter Deep Level Transient Spectroscopy (S-DLTS) Method: Development and QualificationChristopher J. Clymore, Matthew Guidry, Boyu Wang, Emre Akso, Henry Collins, Robert Hamwey, Nirupam Hatui, Stacia Keller, Umesh K. Mishra. 1-5 [doi]
• Interplay Between Charge Defects and Ferroelectric Reliability: From Wake-Up, Imprint, Fatigue to BreakdownChen-Yi Cho, Tzu-Yi Chao, Yu-Lin Shih, Tzu-Yao Lin, Tuo-Hung Hou. 1-6 [doi]
• Local Electric Field-Aware 3D TDDB Model for BEOL Reliability PredictionsY. Fang, Alicja Lesniewska, Ivan Ciofi, Philippe Roussel, I. De Wolf, Kris Croes. 1-8 [doi]
• Improvement of IGZO BTI for DRAM Cell application by heat treatment and recovery effectChangsik Kim, Jongmoo Lee, Jihee Jun, Chanhee Han, In-Jae Bae, Youngkwan Park, Hana Cho, Hyeontae Kim, Dongsik Park, Heonjun Ha, Jaejoon Song, Changsik Yoo, Sangjoon Hwang. 1-6 [doi]
• Comprehensive Study of Saturation Current Impact on LDMOS ReliabilityF. Y. Jin, C.-H. Yang, M. C. Shih, P. L. Wang, W. S. Hung, W. H. Chuang. 1-6 [doi]
• Electromigration in Gold: Challenges and Possibilities (Invited)Hajdin Ceric. 1-10 [doi]
• Impact of Hot-Carrier Degradation on Flicker Noise (1/f) in 45-nm PD-SOI Floating-Body NFETsShruti Pathak, Aarti Rathi, Abhisek Dixit, P. Srinivasan 0002, Oscar H. Gonzalez. 1-6 [doi]
• Critical Role of Holes in Reliability, Robustness and Stability of GaN-on-Si HEMTs for Power and RF ApplicationsRoy K.-Y. Wong, Yeke Liu, Po-Yen Huang, Haoran Wang, Chun-Hao Lai, Chun Chuang, Xue-Han Chen, Shawn S. H. Hsu, Chih-Kai Chang, Ming-Cheng Lin. 1-10 [doi]
• Distinct Signatures of Self-Heating and Trap Dynamics on the AC Y-Parameters of Advanced n-MOSFETsL. Tondelli, A. J. Scholten, J. Van Beurden, R. M. T. Pijper, R. Asanovski, T. V. Dinh, L. Selmi. 1-5 [doi]
• Repetitive Short-Circuit Ruggedness of Different SiC MOSFET Channel DesignsAndrea Piccioni. 1-6 [doi]
• Crack Catcher AI - Enabling Smart Fracture Mechanics Approach for Damage Control in Thin Silicon Wafers for 3D Semiconductor Integrated Devices/PackagesGabriel Preston, Greer Gonzolez, Andrea S. Karnyoto, Fitya S. Mozar, Matthew M. Henry, Mahmud Isnan, Kuncahyo S. Nugroho, Henry Candra, Muhamad Doris, Dianing N. N. Putri, Tyas K. Sari, Bens Pardamean, Endang Djuana, Derrric Speaks, Arief S. Budiman. 1-6 [doi]
• Evaluation of High Holding Voltage SCR Protection Capability in EOS and Overvoltage RegimesVladislav A. Vashchenko, Andrei Shibkov. 1-5 [doi]
• Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN p-n Diodes Grown with Selective Area GrowthMohammed El Amrani, Thomas Kaltsounis, David Plaza Arguello, Stéphane Moreau, Hala El Rammouz, Matthew Charles, Julien Buckley, Mohammed El Amrani, Daniel Alquier. 1-6 [doi]
• A Comprehensive Reliability Approach to Heterogeneous Integration in Power Packaging (Invited)R. Villa, A. Mancaleoni. 1-5 [doi]
• Influence of the Gate Switching Instability Induced Threshold Voltage Drift on the Hard Switching Behavior of 1.2 kV SiC MOSFETsRoman Boldyrjew-Mast, Clemens Herrmann, Xing Liu, Xupeng Li, Thomas Basler. 1-8 [doi]
• Investigation of Screening Methods for 1.2 kV 4H-SiC MOSFETs Using High Gate Voltage Pulses and Unclampled Inductive SwitchingSeung Yup Jang, Justin Lynch, Adam J. Morgan, Dinuth C. Y. B. Yapa Mudiyanselage, WoongJe Sung, Limeng Shi, Anant K. Agarwal. 1-6 [doi]
• Optimized CDM-ESD Protection for 100+ Gbps Wireline IO in 16-nm CMOSShudong Huang, Elyse Rosenbaum. 1-9 [doi]
• A Study on the Origin of MOSFET Random Telegraph Noise Under Strong Inversion at Cryogenic TemperaturesKiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Hiroshi Oka, Takahiro Mori, Shinichi Takagi, Masaharu Kobayashi, Toshiro Hiramoto. 1-6 [doi]
• Refined High Resistance Baking Approaches for Optimal Interconnect ReliabilityH.-C. Chang, Eliot Chen, P. J. Liao, J. H. Lee, Ryan Lu, Y. K. Hwang. 1-5 [doi]
• Optical Reliability and Reliability of Optical DevicesAleksandr Baklanov, Andreas Martin, Annalisa Cappellani, Sebastian Pregl, Dirk Meinhold. 1-6 [doi]
• Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side InterlayerRunhao Han, Jia Yang, Tao Hu, Mingkai Bai, Yajing Ding, Xianzhou Shao, Saifei Dai, Xiaoqing Sun, Junshuai Chai, Hao Xu, Xiaolei Wang, Wenwu Wang 0006, Tianchun Ye 0001. 1-5 [doi]
• Comprehensive Modeling and Investigation of Intrinsic Variation Source Fluctuation in 2D-Layered Thin Film TransistorsTao Du, Wei Zhang, Xuanyao Fong, Guangxi Hu, Peng Zhou, Ye Lu. 1-6 [doi]
• Microprocessor Switching Activity Translation to AC Gate Oxide Wearout: Does it Matter? INTEL4 Meteor Lake Chip Activity Case StudyLuigi Pantisano, K. Joshi, Z. Chbili, E. Frantz, S. M. Ramey, J. Hicks, H. Le, K. M. Foley, K. Pasumarthi, J. Sebot. 1-6 [doi]
• Burst CV (< 2μs) Measurement System for BTI Analysis of MOS CapacitorsHimanshu Marothya, Atul Sachan, Vishwas Acharya, Sandip Mondal. 1-5 [doi]
• Algorithm for Robust Correction of Long-Term Drift Components in Gate Leakage Current RTN DataAnirudh Varanasi, Robin Degraeve, Philippe J. Roussel, Clement Merckling. 1-6 [doi]
• Comprehensive Analysis of Deep level Effects and in-situ Photoionization in 0.15 $\mu \mathrm{m}$ buffer-free AIGaN/GaN HEMTs for RF applicationsFrancesco de Pieri, Manuel Fregolent, Marco Saro, Andrea Carlotto, Mirco Boito, Carlo De Santi, Fabiana Rampazzo, Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni. 1-5 [doi]
• Enhancing Reliability of Power IC and Power Devices for AI Hardware: Addressing Gate Oxide Defects, Transient Voltage Overshoot, and BVDss InstabilityJifa Hao, Haitham Hamed. 1-6 [doi]
• Power and SER Performance of Flip-Flop Cells with Low-Leakage OptionsNicholas J. Pieper, Y. Xiong, Jenna B. Kronenberg, R. Fung, Dennis R. Ball, Bharat L. Bhuva. 1-5 [doi]
• Influence of Starting Material on Final Device in SiC Power TechnologiesN. Piluso, R. Anzalone, E. Fontana, G. Maira, G. Bellocchi, C. Calabretta, S. Alessandrino, F. Vento, C. Nania, Salvatore Adamo, Elisa Vitanza, N. Bentivenga, A. Russo, G. Arena, A. Severino. 1-5 [doi]
• On How to Implement Experimentally Obtained Defect Characteristics in SiC Device SimulationH. G. Medeiros, A. K. Brandl, P. Kumar, H. Scriba, S. Vuillemin, S. Race, I. Kovacevic-Badstübner, M. E. Bathen, U. Grossner. 1-6 [doi]
• Analog Computing with High Precision and Reliability (Invited)Wenhao Song, J. Joshua Yang. 1-7 [doi]
• Hot-Hole Gate Current and Degradation in N-Type Lateral Drift MOSFETs: Characterization and TCAD AnalysisLuca Oldani, Silvia Brazzelli, Mattia Rossetti. 2 [doi]
• The Voltage Dependence of NBTI: Resolution of Controversy Surrounding Power Law vs. ExponentialNarendra Parihar, Elias Frantz, Misagh Rostami-asrabad, Stephen M. Ramey. 2 [doi]
• Reliability Qualification of 1250V Lateral GaN HEMTs for High Reliability Industrial Applications (Invited)Kamal Varadarajan, Alexei Ankoudinov, Robert Yang, Alexey Kudymov, Bhawani Shankar, Karthick Murukesan, Sorin Georgescu. 3 [doi]
• 3 Factor Accelerated Lifetime Testing in Lateral GaN Power HEMTs: A TutorialS. Wienecke, R. Barr, W. Cruse, A. Wong, L. Shen, P. Smith, K. Shono, R. Lal, G. Gupta, Davide Bisi, C. Neufeld. 3 [doi]
• Safety in Memory Architectures for Autonomy (Invited)Prasun Raha. 4 [doi]
• Using Thermal Reflectance Analysis with the Microsanj for Open Defect LocalizationCurtis Jacob Ritter, Dustin Kendig, Sean Duffy, Daniel J. D. Sullivan. 4 [doi]
• The Impact of Silicon Concentration on the Reliability of Tungsten SilicideLiangshan Chen, Yinghong Zhao, Ki-Don Lee, Manisha Sharma, Joonah Yoon, Timothy Davis, Kayla N. Sanders, Myungsoo Yeo, Amado Longoria, Shou-Liang Zhang, Ju Kwang Kim, Dung Dau, Mukyeng Jung. 5 [doi]
• Threshold Voltage Shift and Its Turnaround of SiC MOSFETs Under Positive and Negative Oxide Electric Field Stresses (Invited)M. Noguchi, A. Koyama, T. Iwamatsu, H. Watanabe, N. Miura. 5 [doi]
• Comprehensive Study of Non-Conducting Stress Characteristics in Ultra-Scaled FinFETJun-Yu Huang, Clement Huang, Kun-Chung Huang, Da-You Yang, Hsin-Jou Chuang, Yi-Wen Lee, Eliot Chen, Jen-Hao Lee, Ryan Lu. 6 [doi]
• Aging Characterization at Cryogenic Temperature with Synthesizable Odometers in 12NM and 28NMTahmida Islam, Junkyu Kim, Hanzhao Yu, Zheng Xue, Jacob Xing, Chris H. Kim, Jiesi Xing, Christopher Elash, Peiman Pour Momen, Li Chen. 7 [doi]
• Improved Silent Data Error Detection Through Test Optimization Using Reinforcement LearningManu Shamsa, John D. Martin, Mariano Phielipp, Thiago Macieira, Loganathan Lingappan, Brad Kelly, David Lerner, Michael Tucknott, Ethan Hansen. 8 [doi]
• Fault Isolation and Failure Analysis Challenges in Advanced Packages (Invited)Yan Li. 8 [doi]
• Leakage Current Fluctuation of On/Off-State Stress in 3 nm Process and its Guard-band CompensationMitsuhiko Igarashi, Yuuki Uchida, Keiichiro Iwamoto, Yoshio Takazawa, Yasumasa Tsukamoto. 9 [doi]
• Investigation and Mitigation of Transistor Induced Reliability Issues in 40NM RRAM ArrayYuhang Yang, Zongwei Wang 0001, Haoran Wang, Lin Bao, Gaoqi Yang, YiMao Cai, Ru Huang 0001. 10 [doi]
• ® Processor E-Core ArchitectureF. Libano, S. Mattord, B. Gran, Ricardo Ascázubi. 10 [doi]
• Reliability and Integration Challenges Underlying New Material Introduction into Memory Technology (Invited)Milan Pesic. 11 [doi]
• Exploring AC Time-Dependent Dielectric Breakdown (TDDB) Through Frequency Noise AnalysisY.-K. Chang, P. J. Liao, Y. C. Chang, C.-H. Chou, Y.-S. Liu, J. H. Lee, Ryan Lu, Y. K. Hwang. 11 [doi]
• Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate BiasS. L. Longato, Davide Favero, Arno Stockman, Arianna Nardo, Piet Vanmeerbeek, Marnix Tack, Gaudenzio Meneghesso, Enrico Zanoni, C. De Santi, Matteo Meneghini. 22 [doi]
• Evidence of Back-Gating and its Impact on Breakdown in GaN-on-Si HEMTs with Carbon Doped Buffer Under Pulsed ConditionsMohammad Ateeb Munshi, Mehak Ashraf Mir, Mayank Shrivastava. 24 [doi]
• Experimental Validation of Buffer Traps-Driven Electric Field Dynamics Governing Breakdown and Leakage Trends in AlGaN/GaN HeterostructuresRasik Rashid Malik, Simran R. Karthik, Vipin Joshi, Rajarshi Roy Chaudhuri, Mohammad Ateeb Munshi, Mehak Ashraf Mir, Saniya Syed Wani, Mayank Shrivastava. 26 [doi]
• Impact of Bi-Layer Gate Stack and Thickness on Low Frequency TDDB in FinFET and Planar DevicesKartika Chandra Sahoo, Rakesh Ranjan, Ki-Don Lee, Junehwan Jonathan Kim, Robert Moeller, Pavitra Ramadevi Perepa, John A. Frerich, Ju Kwang Kim, Dung Dau, Mukyeng Jung. 29 [doi]
• Characterization of Cu and SiCN Adhesion in BEOL InterconnectionsChang-Fu Han, Jia-Ming Yang, Chia-Hua Chang, Yu-sheng Lin, Jyun-Lin Wu, Yao-Chun Chuang, Ryan Lu. 39 [doi]
• Effect of TSV - Keep Out Zone on BEOL Reliability of HBM3EDanee Cho, Jin Seok Kim, Taejoong Kim, Seung-Kwon Noh, Junho Song, Junsung Kim 0007, Seungchan An, Yonghui Eum. 40 [doi]
• Thermomechanical Fatigue in Two Level Cu Interconnects Under Pulsing Peak CurrentHariram Mohanram, Harikrishnan Kumarasamy, Choong-Un Kim, Young Joon Park, Sudarshan Prasad, Srikanth Krishnan. 42 [doi]
• Study on the Measurement Method of Interface Resistance in HBM-DRAM: Novel Monitoring Method for Bump Contact ResistanceSanghyeon Jeon, Ilgeun Jung, Seungjin Kim, Sangki Kim, Yangkeun Park, SeungBum Kim, Boyoung Song, Hyodong Ban. 49 [doi]
• Well-Charging Damage to Capacitors Connected Between VDD and VSS in a Single Power DomainHsi-Yu Kuo, Yu-Lin Chu, Chien-Jen Wang, Steven Sze Hang Poon, Chun-Wei Yao, Hsuan Chu, Yi-Ching Chen, Yi-Lun Chen, Yu-Ti Su, Chia-Lin Hsu, Tsung-Yuan Chen, Te-Liang Li, Ray Huang, Kuo-Ji Chen, Ming-Hsiang Song, Kejun Xia, Ryan Lu. 52 [doi]
• Improved HCI in SOI-based next generation RF Power Amplifier FETs using device optimization approachO. H. Gonzalez, P. Srinivasan, S. Cimino, K. Shanbhag, S. Jain. 54 [doi]
• NBTI Improvement of HfO2/TiN Gated pMOSFET by Low-Temperature Remote Hydrogen Plasma TreatmentSongyi Jiang, Junjie Li, Hong Yang, Qianqian Liu, Yunfei Shi, Shuai Yang, Runsheng Wang, Xiaolei Wang, Jun Luo, Wenwu Wang 0006. 56 [doi]
• Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave ApplicationsA. Rathi, Barry J. O'Sullivan, R. ElKashlan, B. Kazemi Esfeh, Arturo Sibaja Hernandez, Hao Yu, AliReza Alian, S. Yadav, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert. 71 [doi]
• A New Methodology to Evaluate Die-Package Level Load-Pull and Ruggedness for RF Long Term Aging for 5G ApplicationsP. Srinivasan 0002, Oscar H. Gonzalez, J. Lestage, Stephen Moss, Oscar D. Restrepo, S. Ludvik. 72 [doi]
• Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN ThicknessesYi Yang, Hao Yu, Meng-Che Tsai, Wei-Tung Lin, Ying-Chun Kuo, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, Sachin Yadav 0001, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian-Li Wu. 73 [doi]
• Reliability Impacts of Tapered Nanosheets and Localized Layout Effects in MBCFETs Fabricated with 2NM Logic Technology Featuring GAASeongkyung Kim, Eunyu Choi, Jinyoung Kim, Junkyo Jeong, Jihun Ryu, Myungsoo Yeo, Taiki Uemura, Shin-Young Chung, Jong-Ho Lee. 83 [doi]