D. Roy - researchr alias

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Viewing Publication 1 - 29 from 29

2024

Artificial Intelligence for the Electron Ion Collider (AI4EIC)C. Allaire, R. Ammendola, E.-C. Aschenauer, M. Balandat, Marco Battaglieri, J. C. Bernauer, M. Bondì, N. Branson, T. Britton, A. Butter, I. Chahrour, P. Chatagnon, Evaristo Cisbani, E. W. Cline, S. Dash, C. T. Dean, W. Deconinck, A. Deshpande, Markus Diefenthaler, R. Ent, Cristiano Fanelli, M. Finger, E. Fol, S. Furletov, Y. Gao, James Giroux, N. C. Gunawardhana Waduge, O. Hassan, P. L. Hegde, Roger José Hernández-Pinto, Astrid N. Hiller Blin, Tanja Horn, J. Huang, A. Jalotra, D. Jayakodige, B. Joo, M. Junaid, N. Kalantarians, Piyush Karande, B. Kriesten, R. Kunnawalkam Elayavalli, Y. Li, M. Lin, Frank Liu 0001, S. Liuti, G. Matousek, M. McEneaney, Diana McSpadden, T. Menzo, T. Miceli, Vinicius Mikuni, R. Montgomery, Benjamin Nachman, R. R. Nair, J. Niestroy, S. A. Ochoa Oregon, J. Oleniacz, J. D. Osborn, C. Paudel, C. Pecar, C. Peng, Gabriel N. Perdue, W. Phelps, M. L. Purschke, H. Rajendran, K. Rajput, Y. Ren, David Francisco Rentería-Estrada, D. Richford, B. J. Roy, D. Roy, A. Saini, N. Sato, T. Satogata, German Sborlini, Malachi Schram, D. Shih, J. Singh, R. Singh, A. Siodmok, J. Stevens, P. Stone, L. Suarez, K. Suresh, A.-N. Tawfik, Fernando Torales Acosta, N. Tran, R. Trotta, F. J. Twagirayezu, R. Tyson, S. Volkova, A. Vossen, E. Walter, Daniel Whiteson, Michael Williams, S. Wu, N. Zachariou, P. Zurita. csbs, 8(1):5, December 2024. [doi]

2021

Simulation Study of the Origin of Ge High Speed Photodetector DegradationB. Arunachalam, Jean-Emmanuel Broquin, Q. Rafhay, D. Roy, A. Kaminski. irps 2021: 1-4 [doi]

2019

2018

Performance & reliability of 3D architectures (πfet, Finfet, Ωfet)Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Casse, F. Gaillard, X. Federspiel, D. Roy, E. Vincent, G. Ghibaudo. irps 2018: 6 [doi]

2015

Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessmentA. Bezza, M. Rafik, D. Roy, X. Federspiel, P. Mora, C. Diouf, V. Huard, G. Ghibaudo. irps 2015: 5 [doi]

2012

Microscopic scale characterization and modeling of transistor degradation under HC stressYoann Mamy Randriamihaja, V. Huard, X. Federspiel, A. Zaka, P. Palestri, D. Rideau, D. Roy, A. Bravaix. mr, 52(11):2513-2520, 2012. [doi]

2010

Reliability stochastic optimization for a series system with interval component reliability via genetic algorithmA. K. Bhunia, L. Sahoo, D. Roy. amc, 216(3):929-939, 2010. [doi]

2009

A GA based penalty function technique for solving constrained redundancy allocation problem of series system with interval valued reliability of componentsR. K. Gupta, A. K. Bhunia, D. Roy. jcam, 232(2):275-284, 2009. [doi]

Visibility Graph-Based Spatial Path Planning of Robots Using Configuration Space AlgorithmsD. Roy. ijra, 24(1), 2009. [doi]

2008

Gene Identification: Classical and Computational Intelligence ApproachesSanghamitra Bandyopadhyay, Ujjwal Maulik, D. Roy. tsmc, 38(1):55-68, 2008. [doi]

A multistep transversal linearization (MTL) method in non-linear dynamics through a Magnus characterizationAsha Viswanath, D. Roy. amc, 198(2):799-823, 2008. [doi]

2007

Interpretation of Spatial Language in a Map Navigation TaskM. Levit, D. Roy. tsmc, 37(3):667-679, 2007. [doi]

2006

Designing in reliability in advanced CMOS technologiesC. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix. mr, 46(9-11):1464-1471, 2006. [doi]

2005

Multi-vibrational hydrogen release: Physical origin of T::bd::, Q::bd:: power-law voltage dependence of oxide breakdown in ultra-thin gate oxidesG. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo. mr, 45(12):1842-1854, 2005. [doi]

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdownG. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo. mr, 45(5-6):841-844, 2005. [doi]

2004

From XML to RDF: Syntax, Semantics, Security, and Integrity (Invited Paper)Csilla Farkas, Vaibhav Gowadia, Amit Jain, D. Roy. tc11-5 2006: 41-55 [doi]

Discrete Rayleigh distributionD. Roy. tr, 53(2):255-260, 2004. [doi]

2003

On the role of holes in oxide breakdown mechanism in inverted nMOSFETsF. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo. mr, 43(8):1199-1202, 2003. [doi]

New insights into the change of voltage acceleration and temperature activation of oxide breakdownG. Ribes, S. Bruyère, F. Monsieur, D. Roy, V. Huard. mr, 43(8):1211-1214, 2003. [doi]

2002

2001

Failures in ultrathin oxides: Stored energy or carrier energy driven?S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo. mr, 41(9-10):1367-1372, 2001.

Body effect induced wear-out acceleration in ultra-thin oxidesS. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo. mr, 41(7):1031-1034, 2001. [doi]

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability PredictionsF. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo. mr, 41(9-10):1295-1300, 2001.

1991

Stochistic Petri Net Models of Distributed Simulation SystemsRatan K. Guha, Mostafa A. Bassiouni, Arthur F. Dickinson, D. Roy, M. C. Fisher. dmis 1992: 109-130

1988

Undoing Ada hypeDale J. Gaumer, D. Roy, Mark S. Gerhardt, Kenneth L. Bowles, G. Smith. sigada 1988: 581-604 [doi]

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