S. Bruyère - researchr alias

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Viewing Publication 1 - 13 from 13

2008

Impact of silicon nitride CESL on NLDEMOS transistor reliabilityG. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo. mr, 48(8-9):1539-1543, 2008. [doi]

2007

Refined electrical analysis of two charge states transition characteristic of borderless silicon nitrideG. Beylier, S. Bruyère, D. Benoit, G. Ghibaudo. mr, 47(4-5):743-747, 2007. [doi]

2005

2003

MIM capacitance variation under electrical stressC. Besset, S. Bruyère, S. Blonkowski, S. Crémer, E. Vincent. mr, 43(8):1237-1240, 2003. [doi]

On the role of holes in oxide breakdown mechanism in inverted nMOSFETsF. Monsieur, E. Vincent, V. Huard, S. Bruyère, D. Roy, Thomas Skotnicki, G. Pananakakis, G. Ghibaudo. mr, 43(8):1199-1202, 2003. [doi]

New insights into the change of voltage acceleration and temperature activation of oxide breakdownG. Ribes, S. Bruyère, F. Monsieur, D. Roy, V. Huard. mr, 43(8):1211-1214, 2003. [doi]

2002

Gate oxide Reliability assessment optimizationF. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo. mr, 42(9-11):1505-1508, 2002. [doi]

Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvementD. Roy, S. Bruyère, E. Vincent, F. Monsieur. mr, 42(9-11):1497-1500, 2002. [doi]

2001

Failures in ultrathin oxides: Stored energy or carrier energy driven?S. Bruyère, F. Monsieur, D. Roy, E. Vincent, G. Ghibaudo. mr, 41(9-10):1367-1372, 2001.

Body effect induced wear-out acceleration in ultra-thin oxidesS. Bruyère, D. Roy, E. Robilliart, E. Vincent, G. Ghibaudo. mr, 41(7):1031-1034, 2001. [doi]

Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability PredictionsF. Monsieur, E. Vincent, D. Roy, S. Bruyère, G. Pananakakis, G. Ghibaudo. mr, 41(9-10):1295-1300, 2001.

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