M. Denais - researchr alias

researchr

You are not signed in
Sign in
Sign up

Viewing Publication 1 - 7 from 7

2007

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI DegradationC. R. Parthasarathy, A. Bravaix, C. Guérin, M. Denais, V. Huard. patmos 2007: 191-200 [doi]

2006

NBTI degradation: From physical mechanisms to modellingV. Huard, M. Denais, C. R. Parthasarathy. mr, 46(1):1-23, 2006. [doi]

Designing in reliability in advanced CMOS technologiesC. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix. mr, 46(9-11):1464-1471, 2006. [doi]

2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETsA. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent. mr, 45(9-11):1370-1375, 2005. [doi]

A thorough investigation of MOSFETs NBTI degradationV. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent. mr, 45(1):83-98, 2005. [doi]

Multi-vibrational hydrogen release: Physical origin of T::bd::, Q::bd:: power-law voltage dependence of oxide breakdown in ultra-thin gate oxidesG. Ribes, S. Bruyère, M. Denais, F. Monsieur, V. Huard, D. Roy, G. Ghibaudo. mr, 45(12):1842-1854, 2005. [doi]

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdownG. Ribes, S. Bruyère, M. Denais, D. Roy, G. Ghibaudo. mr, 45(5-6):841-844, 2005. [doi]

Sign in or sign up to see more results.

runs on WebDSL