A. Bravaix - researchr alias

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Viewing Publication 1 - 16 from 16

2016

Hot-carrier and BTI damage distinction for high performance digital application in 28nm FDSOI and 28nm LP CMOS nodesA. Bravaix, M. Saliva, Florian Cacho, X. Federspiel, C. Ndiaye, S. Mhira, E. Kussener, E. Pauly, Vincent Huard. iolts 2016: 43-46 [doi]

2015

2012

Microscopic scale characterization and modeling of transistor degradation under HC stressYoann Mamy Randriamihaja, V. Huard, X. Federspiel, A. Zaka, P. Palestri, D. Rideau, D. Roy, A. Bravaix. mr, 52(11):2513-2520, 2012. [doi]

2009

Analysis of deep submicron VLSI technological risks: A new qualification process for professional electronicsF. Molière, B. Foucher, P. Perdu, A. Bravaix. mr, 49(9-11):1381-1385, 2009. [doi]

2007

Degradation mechanism understanding of NLDEMOS SOI in RF applicationsD. Lachenal, A. Bravaix, F. Monsieur, Yannick Rey-Tauriac. mr, 47(9-11):1634-1638, 2007. [doi]

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI DegradationC. R. Parthasarathy, A. Bravaix, C. Guérin, M. Denais, V. Huard. patmos 2007: 191-200 [doi]

2006

Designing in reliability in advanced CMOS technologiesC. R. Parthasarathy, M. Denais, V. Huard, G. Ribes, D. Roy, C. Guérin, F. Perrier, E. Vincent, A. Bravaix. mr, 46(9-11):1464-1471, 2006. [doi]

2005

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETsA. Bravaix, D. Goguenheim, M. Denais, V. Huard, C. R. Parthasarathy, F. Perrier, N. Revil, E. Vincent. mr, 45(9-11):1370-1375, 2005. [doi]

Impact of wafer charging on hot carrier reliability and optimization of latent damage detection methodology in advanced CMOS technologiesD. Goguenheim, A. Bravaix, S. Gomri, J. M. Moragues, C. Monserie, N. Legrand, P. Boivin. mr, 45(3-4):487-492, 2005. [doi]

A thorough investigation of MOSFETs NBTI degradationV. Huard, M. Denais, F. Perrier, N. Revil, C. R. Parthasarathy, A. Bravaix, E. Vincent. mr, 45(1):83-98, 2005. [doi]

Hot-carrier reliability of 20V MOS transistors in 0.13 mum CMOS technologyYannick Rey-Tauriac, J. Badoc, B. Reynard, R. A. Bianchi, D. Lachenal, A. Bravaix. mr, 45(9-11):1349-1354, 2005. [doi]

Experimental extraction of degradation parameters after constant voltage stress and substrate hot electron injection on ultrathin oxidesC. Trapes, D. Goguenheim, A. Bravaix. mr, 45(5-6):883-886, 2005. [doi]

2004

Hole injection enhanced hot-carrier degradation in PMOSFETs used for systems on chip applications with 6.5-2 nm thick gate-oxidesA. Bravaix, D. Goguenheim, N. Revil, E. Vincent. mr, 44(1):65-77, 2004. [doi]

2003

Carrier injection efficiency for the reliability study of 3.5-1.2 nm thick gate-oxide CMOS technologiesA. Bravaix, C. Trapes, D. Goguenheim, N. Revil, E. Vincent. mr, 43(8):1241-1246, 2003. [doi]

2001

Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15mum Channel-Length N-MOSFETsA. Bravaix, D. Goguenheim, N. Revil, E. Vincent. mr, 41(9-10):1313-1318, 2001.

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