Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment

A. Bezza, M. Rafik, D. Roy, X. Federspiel, P. Mora, C. Diouf, V. Huard, G. Ghibaudo. Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. In IEEE International Reliability Physics Symposium, IRPS 2015, Monterey, CA, USA, April 19-23, 2015. pages 5, IEEE, 2015. [doi]

Abstract

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