Robin Degraeve - researchr alias

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Viewing Publication 1 - 34 from 34

2023

2022

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurementsMd Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt. vlsit 2022: 340-342 [doi]

A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection CapabilityJavier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve. irps 2022: 1-7 [doi]

Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical StressKookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf. irps 2022: 10 [doi]

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar modeTaras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar. vlsit 2022: 312-313 [doi]

Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacksAndrea Vici, Robin Degraeve, João Pedro Bastos, Philippe Roussel, Ingrid De Wolf. irps 2022: 27-1 [doi]

2021

2019

A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOSKai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede. jssc, 54(10):2765-2776, 2019. [doi]

Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic ApplicationsJonas Doevenspeck, Robin Degraeve, Andrea Fantini, Peter Debacker, Diederik Verkest, Rudy Lauwereins, Wim Dehaene. irps 2019: 1-6 [doi]

2018

Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fitSimon Van Beek, Philippe Roussel, Barry O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar. essderc 2018: 146-149 [doi]

A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUFKai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede. tches, 2018(1):98-117, 2018. [doi]

A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOSKai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede. asscc 2018: 157-160 [doi]

A multi-bit/cell PUF using analog breakdown positions in CMOSKai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede. irps 2018: 2-1 [doi]

Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applicationsJonas Doevenspeck, Robin Degraeve, Stefan Cosemans, Philippe Roussel, Bram-Ernst Verhoef, Rudy Lauwereins, Wim Dehaene. essderc 2018: 62-65 [doi]

Investigation of the endurance of FE-HfO2 devices by means of TDDB studiesKarine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, U. Celano, Ben Kaczer, Luca Di Piazza, Mihaela Popovici, Guido Groeseneken, Jan Van Houdt. irps 2018: 6 [doi]

Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrateA. Lebanov, Andrea Fantini, Robin Degraeve, Manoj Nag, Myriam Willegems, Steve Smout, Soeren Steudel, Jan Genoe, P. Horemans, K. Mvnv. essderc 2018: 66-69 [doi]

2015

2014

As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliabilityB. J. Tang, Kris Croes, Y. Barbarin, Y. Q. Wang, Robin Degraeve, Y. Li, M. Toledano-Luque, T. Kauerauf, J. Bömmels, Zsolt Tokei, Ingrid De Wolf. mr, 54(9-10):1675-1679, 2014. [doi]

2007

Distribution and generation of traps in SiO::2::/Al::2::O::3:: gate stacksIsodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt. mr, 47(4-5):525-527, 2007. [doi]

Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliabilityBen Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken. mr, 47(4-5):559-566, 2007. [doi]

2006

Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutionsS. Thijs, M. Natarajan Iyer, D. Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries Scholten, Stefaan Decoutere, Guido Groeseneken. mr, 46(5-6):702-712, 2006. [doi]

2005

Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performanceRobert O Connor, Greg Hughes, Robin Degraeve, Ben Kaczer. mr, 45(5-6):869-874, 2005. [doi]

On the data interpretation of the C-AFM measurements in the characterization of thin insulating layersJ. Pétry, Wilfried Vandervorst, L. Pantisano, Robin Degraeve. mr, 45(5-6):815-818, 2005. [doi]

2003

A new method for the analysis of high-resolution SILC dataS. Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, J. Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D Olieslaeger, Jan D Haen. mr, 43(9-11):1483-1488, 2003. [doi]

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Researchr

Publications by 'Robin Degraeve'

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2023

2022

2021

2019

2018

2015

2014

2007

2006

2005

2003

2002

1999

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