Table of Contents

• 5G wireless communication beyond 2020Jonas Hansryd. 1-3 [doi]
• Theoretical analyses and modeling for nanoelectronicsGiorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani. 4-9 [doi]
• Nature as microelectronic fab: Bioelectronics: Materials, transistors and circuitsBarbara Stadlober, Esther Karner, Andreas Petritz, Alexander Fian, Mihai Irimia-Vladu. 10-17 [doi]
• New frontiers in digital health: Remote monitoring of animal and human metabolism on our smartphones and tabletsSandro Carrara. 18 [doi]
• Ge/III-V MOS device technologies for low power integrated systemsShinichi Takagi, Mitsuru Takenaka. 20-25 [doi]
• Investigations of vapor phase deposited transition metal dichalcogenide films for future electronic applicationsToby Hallam, Hye-Young Kim, Maria O'Brien, Riley Gatensby, Niall McEvoy, Georg S. Duesberg. 26-30 [doi]
• High performance NEMS devices for sensing applicationsThomas Ernst, Sebastien Hentz, Julien Arcamone, Vincent Agache, Laurent Duraffourg, Issam Ouerghi, Willy Ludurczak, Carine Ladner, Eric Ollier, Philippe Andreucci, Éric Colinet, Pierre Puget. 31-35 [doi]
• st century: Reflections on the past, present, and futureMark S. Lundstrom. 36-39 [doi]
• Compact modeling of DG-Tunnel FET for Verilog-A implementationArnab Biswas, Luca De Michielis, Antonios Bazigos, Adrian Mihai Ionescu. 40-43 [doi]
• Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effectsJ. Blasco, J. Sune, E. Miranda. 44-47 [doi]
• A surface potential and current model for polarity-controllable silicon nanowire FETsJian Zhang, Pierre-Emmanuel Gaillardon, Giovanni De Micheli. 48-51 [doi]
• Mixed-domain compact modeling framework for fluid flow driven by electrostatic organic actuatorsT. K. Maiti, L. Chen, H. Miyamoto, Mitiko Miura-Mattausch, Hans Jürgen Mattausch. 52-55 [doi]
• Charge trapping in gate-drain access region of AlGaN/GaN MIS-HEMTs after drain stressS. A. Jauss, S. Schwaiger, W. Daves, S. Noll, O. Ambacher. 56-59 [doi]
• E-mode AlGaN/GaN True-MOS, with high-k ZrO2 gate insulatorMattia Capriotti, Clément Fleury, Ole Bethge, Matteo Rigato, Suzanne Lancaster, Dionyz Pogany, Gottfried Strasser, Eldad Bahat-Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl. 60-63 [doi]
• Technology and design of GaN power devicesPeter Moens, A. Banerjee, P. Coppens, A. Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack. 64-67 [doi]
• Experimental analysis of planar edge terminations for high voltage 4H-SiC devicesV. Soler, Maxime Berthou, A. Mihaila, Josep Montserrat, Philippe Godignon, J. Rebollo, José Millán. 68-71 [doi]
• On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurementsRoberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser. 72-75 [doi]
• UTBB FDSOI: Evolution and opportunitiesThomas Skotnicki, Stephane Monfray. 76-79 [doi]
• ® Cores in FinFET technolgiesYves Laplanche. 80-83 [doi]
• FinFET versus UTBB SOI - A RF perspectiveJean-Pierre Raskin. 84-88 [doi]
• Antenna-coupled single-metal thermocouple array for energy harvestingGergo P. Szakmany, Alexei O. Orlov, Gary H. Bernstein, Wolfgang Porod. 89-92 [doi]
• Novel CMOS-compatible a-Si based oscillator and threshold switchAbhishek A. Sharma, Marek Skowronski, James A. Bain, Jeffrey A. Weldon. 93-96 [doi]
• Modelling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-AGrazvydas Ziemys, Andrew Giebfried, Markus Becherer, Irina Eichwald, Doris Schmitt-Landsiedel, Stephan Breitkreutz-v. Gamm. 97-100 [doi]
• Non-boolean computing based on linear waves and oscillatorsGyörgy Csaba, Adam Papp, Wolfgang Porod, Ramazan Yeniceri. 101-104 [doi]
• Plasmonic and electronic device integrated circuits and their characteristicsM. Fukuda, H. Sakai, T. Mano, Y. Kimura, M. Ota, M. Fukuhara, T. Aihara, Y. Ishii, T. Ishiyama. 105-108 [doi]
• Emerging nonvolatile memory (NVM) technologiesAn Chen. 109-113 [doi]
• Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAMA. Belmonte, A. Fantini, A. Redolfi, M. Houssa, M. Jurczak, L. Goux. 114-117 [doi]
• On the voltage scaling potential of SONOS non-volatile memory transistorsJ. Ocker, Stefan Slesazeck, Thomas Mikolajick, S. Buschbeck, S. Gunther, E. Yurchuk, R. Hoffmann, V. Beyer. 118-121 [doi]
• High performance low A/R poly PN diode for 20nm node PCRAM cell switchYoung-Ho Lee, Min Yong Lee, Seung Beom Baek, Jong Chul Lee, Su-Jin Chae, Hae Chan Park, Byoung Ki Lee, Hyeong Soo Kim. 122-125 [doi]
• The world's first high voltage GaN-on-diamond power devicesTurar Baltynov, Vineet Unni, E. M. Sankara Narayanan. 126-129 [doi]
• Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solutionDong-Hyeok Son, Young-woo Jo, Ryun-Hwi Kim, Chan Heo, Jae Hwa Seo, Jin-Su Kim, In Man Kang, Sorin Cristoloveanu, Jung Hee Lee. 130-133 [doi]
• EDMOS in ultrathin FDSOI: Effect of doping and layout of the drift regionAntoine Litty, Sylvie Ortolland, Dominique Golanski, Christian Dutto, Sorin Cristoloveanu. 134-137 [doi]
• Monolithically integrated optical random pulse generator in high voltage CMOS technologyAbbas Khanmohammadi, Reinhard Enne, Michael Hofbauer, Horst Zimmermann. 138-141 [doi]
• Energy harvesting with on-chip solar cells and integrated DC/DC converterChristoph Steffan, Philipp Greiner, Bernd Deutschmann, Carolin Kollegger, Gerald Holweg. 142-145 [doi]
• Compact heterodyne NEMS oscillator for sensing applicationsMarc Sansa, Guillaume Gourlat, Guillaume Jourdan, Patrick Villard, Gilles Sicard, Sebastien Hentz. 146-148 [doi]
• Piezoresistive transduction optimization of p-doped poly-Silicon NEMSIssam Ouerghi, Willy Ludurczak, Laurent Duraffourg, Carine Ladner, Anouar Idrissi-El Oudrhiri, Patrice Gergaud, Maud Vinet, Thomas Ernst. 149-152 [doi]
• Fast high power capacitive RF-MEMS switch for X-Band applicationsA. Ziaei, S. Bansropun, P. Martins, M. Le Baillif. 153-155 [doi]
• Charge transfer speed analysis in pinned photodiode CMOS image sensors based on a pulsed storage-gate methodAlice Pelamatti, Vincent Goiffon, Aziouz Chabane, Pierre Magnan, Cedric Virmontois, Olivier Saint-Pe, Michel Breart de Boisanger. 156-159 [doi]
• Scalability of planar FDSOI and FinFETs and What's in store for the future beyond that?Bruce B. Doris, Terence Hook. 160-163 [doi]
• UTBB FDSOI technology flexibility for ultra low power internet-of-things applicationsEdith Beigné, Jean-Frédéric Christmann, Alexandre Valentian, Olivier Billoint, E. Amat, D. Morche. 164-167 [doi]
• (Invited) silicene and phosphorene: Progress on the intriguing case of buckled atomic sheetsLi Tao, Weinan Zhu, Joon-Seok Kim, Deji Akinwande. 168-171 [doi]
• Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistorsYury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max C. Lemme, Tibor Grasser. 172-175 [doi]
• Characterization and modeling of low-frequency noise in CVD-grown graphene FETsC. Mukherjee, Jorgue Daniel Aguirre Morales, Sébastien Fregonese, Thomas Zimmer, Cristell Maneux, H. Happy, W. Wei. 176-179 [doi]
• A new physics-based compact model for Bilayer Graphene Field-Effect TransistorsJorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer. 180-183 [doi]
• Systematic comparison of metal contacts on CVD grapheneV. Passi Gahoi, S. Kataria, S. Wagner, A. Bablich, M. C. Lemme. 184-187 [doi]
• Sensors and the Internet of ThingsMatthias Streiff. 188 [doi]
• A multi-functional 200, 000 lines/s tri-linear RGB line-scan sensorWerner Brockherde, Benjamin Bechen, Ernst Bodenstorfer, Jörg Brodersen, Konrad J. Mayer, Christian Nitta, Olaf Schrey. 189 [doi]
• Unified system level model of adsorption/desorption process and sensing electronics for vapor trace detection of different molecules in the airDrago Strle, Janez Trontelj. 190-193 [doi]
• Concept for a security aware automatic fare collection system using HF/UHF dual band RFID transpondersLukas Zoscher, Jasmin Grosinger, Raphael Spreitzer, Ulrich Muehlmann, Hannes Gross, Wolfgang Bosch. 194-197 [doi]
• Step tunneling-enhanced hot-electron injection in vertical graphene base transistorsSam Vaziri, M. Belete, Anderson D. Smith, Eugenio Dentoni Litta, Grzegorz Lupina, Max C. Lemme, Mikael Östling. 198-201 [doi]
• Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire arrayG. Larrieu, Y. Guerfi, X. L. Han, N. Clement. 202-205 [doi]
• Physical and electrical characterization of Mg-doped ZnO thin-film transistorsA. Shaw, T. J. Whittles, I. Z. Mitrovic, J. D. Jin, J. S. Wrench, D. Hesp, V. R. Dhanak, P. R. Chalker, Steve Hall. 206-209 [doi]
• Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive modelJ. Pelloux-Prayer, Mikaël Casse, Francois Triozon, Sylvain Barraud, Yann-Michel Niquet, J.-L. Rouviere, Olivier Faynot, Gilles Reimbold. 210-213 [doi]
• Metal gate VT modulation using PLAD N2 implants for Ge p-FinFET applicationsShraddha Kothari, Chandan Joishi, Dhirendra Vaidya, Hasan Nejad, Benjamin Colombeau, Swaroop Ganguly, Saurabh Lodha. 214-217 [doi]
• The defect-centric perspective of device and circuit reliability - From individual defects to circuitsBen Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, M. Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, G. Rzepa, Wolfgang Gös, Tibor Grasser. 218-225 [doi]
• Experimental evidences and simulations of trap generation along a percolation pathLouis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marco Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov. 226-229 [doi]
• Threshold voltage and on-current Variability related to interface traps spatial distributionV. Velayudhan, Javier Martín-Martínez, Marc Porti, C. Couso, Rosana Rodríguez, Montserrat Nafría, Xavier Aymerich, C. Marquez, F. Gamiz. 230-233 [doi]
• Reliability aspects of TiSi-Schottky barrier diodes in a SiGe BiCMOS technologyAndreas Mai, Alexander Fox. 234-237 [doi]
• Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flowRazaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marco Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov. 238-241 [doi]
• Optimization of Trigate-On-Insulator MOSFET aspect ratio with MASTARGaspard Hiblot, Quentin Rafhay, Loic Gaben, Gérard Ghibaudo, Frédéric Boeuf. 242-245 [doi]
• Effective work function engineering by sacrificial lanthanum diffusion on HfON-based 14 nm NFET devicesCarlos Suarez-Segovia, Charles Leroux, Florian Domengie, Karen Dabertrand, Vincent Joseph, Giovanni Romano, Pierre Caubet, Stephane Zoll, Olivier Weber, Gérard Ghibaudo, Gilles Reimbold, Michel Haond. 246-249 [doi]
• 2-FET device in 14 nm FDSOI technologyH. El Dirani, Yohann Solaro, Pascal Fonteneau, Philippe Ferrari, Sorin Cristoloveanu. 250-253 [doi]
• Substrate noise isolation improvement by helium-3 ion irradiation technique in a triple-well CMOS processNing Li, Takeshi Inoue, Takuichi Hirano, Jian Pang, Rui Wu, Kenichi Okada, Hitoshi Sakane, Akira Matsuzawa. 254-257 [doi]
• New layout design methodology for monolithically integrated 3D CMOS logic circuits based on parasitics engineeringChika Tanaka, Keiji Ikeda, Masumi Saitoh. 258-261 [doi]
• Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low currentC. Y. Chen, L. Goux, A. Fantini, Robin Degraeve, A. Redolfi, Guido Groeseneken, Malgorzata Jurczak. 262-265 [doi]
• Benefit of Al2O3/HfO2 bilayer for BEOL RRAM integration through 16kb memory cut characterizationM. Azzaz, A. Benoist, Elisa Vianello, Daniele Garbin, E. Jalaguier, Carlo Cagli, C. Charpin, Stefania Bernasconi, S. Jeannot, T. Dewolf, G. Audoit, C. Guedj, S. Denorme, Philippe Candelier, Claire Fenouillet-Béranger, Luca Perniola. 266-269 [doi]
• Characterization of anomalous Random Telegraph Noise in Resistive Random Access MemoryFrancesco Maria Puglisi, Luca Larcher, Andrea Padovani, Paolo Pavan. 270-273 [doi]
• Improving the resistive switching uniformity of forming-free TiO2-x based devices by embedded Pt nanocrystalsP. Bousoulas, D. Sakellaropoulos, J. Giannopoulos, D. Tsoukalas. 274-277 [doi]
• Back-gate effects and detailed characterization of junctionless transistorMukta Singh Parihar, Fan Yu Liu, Carlos Navarro, Sylvain Barraud, Maryline Bawedin, Irina Ionica, Abhinav Kranti, Sorin Cristoloveanu. 282-285 [doi]
• Low-frequency noise in bare SOI wafers: Experiments and modelLuca Pirro, Irina Ionica, Sorin Cristoloveanu, Gérard Ghibaudo. 286-289 [doi]
• Thin-film SOI PIN-diode leakage current dependence on back-gate-potential and HCI trapsAndrei Schmidt, Stefan Dreiner, Holger Vogt, Uwe Paschen. 290-293 [doi]
• H2 annealing for metallic contaminant reduction in BCD-SOI process: Benefits and drawbacksGabriella Ghidini, Daniele Merlini, Massimiliano Cannavo, Maria Luisa Polignano, Isabella Mica, Amos Galbiati, Lucia Zullino, Riccardo Turconi, Salvatore Grasso, Maurizio Moroni, Davide Codegoni. 294-297 [doi]
• Contact resistance extraction methods for CNTFETsAnibal Pacheco-Sanchez, Sven Mothes, Martin Claus, Michael Schroter. 298-301 [doi]
• Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling pathsHamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk. 302-305 [doi]
• Improved surface roughness modeling and mobility projections in thin film MOSFETsO. Badami, E. Caruso, Daniel Lizzit, David Esseni, Pierpaolo Palestri, Luca Selmi. 306-309 [doi]
• Predictive physical simulation of III/V quantum-well MISFETs for logic applicationsZoran Stanojevic, Markus Karner, M. Aichhorn, F. Mitterbauer, V. Eyert, Ch. Kernstock, Hans Kosina. 310-313 [doi]
• Strain engineering of single-layer MoS2Manouchehr Hosseini, Mohammad Elahi, Ebrahim Asl Soleimani, Mahdi Pourfath, David Esseni. 314-317 [doi]
• Electric performance of AlGaN/GaN heterojunction devices: A full-quantum studyLuca Lucci, Jean-Charles Barb, Marco Pala. 318-321 [doi]