E. Miranda - researchr alias

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Viewing Publication 1 - 22 from 22

2018

Device variability tolerance of a RRAM-based self-organizing neuromorphic systemM. Pedro, Javier Martín-Martínez, E. Miranda, Rosana Rodríguez, Montserrat Nafría, M. B. González, Francesca Campabadal. irps 2018: 4-1 [doi]

2017

2016

A fuzzy system for estimating Premium Cost of option exchange using Mamdani Inference: Derivates Market of MexicoM. Munoz, E. Miranda. fuzzIEEE 2016: 888-895 [doi]

2015

Modeling of the conduction characteristics of voltage-driven bipolar RRAMs including turning point effectsJ. Blasco, J. Sune, E. Miranda. essderc 2015: 44-47 [doi]

Threading dislocations in III-V semiconductors: Analysis of electrical conductionV. Iglesias, Marc Porti, C. Couso, Q. Wu, S. Claramunt, Montserrat Nafría, E. Miranda, Neus Domingo, Gennadi Bersuker, Aaron Cordes. irps 2015: 4 [doi]

2014

x-based MIM capacitorsJ. Blasco, Helena Castán, Héctor García, Salvador Dueñas, J. Suñé, Marianna Kemell, Kaupo Kukli, Mikko Ritala, Markku Leskelä, E. Miranda. mr, 54(9-10):1707-1711, 2014. [doi]

2012

Irrelevant and independent natural extension for sets of desirable gamblesG. de Cooman, E. Miranda. jair, 45:601-640, 2012. [doi]

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdownE. Miranda, Takamasa Kawanago, Kuniyuki Kakushima, J. Suñé, Hiroshi Iwai. mr, 52(9-10):1909-1912, 2012. [doi]

2011

An extension of the Curie-von Schweidler law for the leakage current decay in MIS structures including progressive breakdownE. Miranda, C. Mahata, T. Das, C. K. Maiti. mr, 51(9-11):1535-1539, 2011. [doi]

2010

Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statisticsE. Miranda, E. O Connor, P. K. Hurley. mr, 50(9-11):1294-1297, 2010. [doi]

2009

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacksE. Miranda, J. Martin-Martinez, E. O Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O Connell, P. K. Hurley. mr, 49(9-11):1052-1055, 2009. [doi]

2008

Compact modeling of the non-linear post-breakdown current in thin gate oxides using the generalized diode equationE. Miranda. mr, 48(8-9):1604-1607, 2008. [doi]

2005

A function-fit model for the hard breakdown I-V characteristics of ultra-thin oxides in MOS structuresE. Miranda, B. Brandala. mr, 45(1):175-178, 2005. [doi]

Degradation of high-K LA::2::O::3:: gate dielectrics using progressive electrical stressE. Miranda, J. Molina, Y. Kim, H. Iwai. mr, 45(9-11):1365-1369, 2005. [doi]

2004

Single-equation model for low and high voltage soft breakdown conductionE. Miranda, E. Mallaina. mr, 44(1):163-166, 2004. [doi]

2002

Modeling of the I-V characteristics of high-field stressed MOS structures using a Fowler-Nordheim-type tunneling expressionE. Miranda, G. Redin, A. Faigón. mr, 42(6):935-941, 2002. [doi]

2000

Simulink-Based HW/SW Codesign of Embedded Neuro-Fuzzy SystemsLeonardo Maria Reyneri, Marcello Chiaberge, Luciano Lavagno, Begoña Pino, E. Miranda. IJNS, 10(3):211-226, 2000. [doi]

1998

A hybrid digital neuro-fuzzy board for control of complex systemsMarcello Chiaberge, E. Miranda, Leonardo Reyneri. SMC 1998: 1904-1909 [doi]

1995

A CPWM Synapsis for Weighted Radial Basis FunctionsE. Miranda, Leonardo Maria Reyneri. iwann 1995: 830-837

1991

The Design of a System for Distributing Shared ObjectsJean Dollimore, E. Miranda, Wang Xu. cj, 34(6):514-521, 1991.

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