Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown - researchr publication

researchr

You are not signed in
Sign in
Sign up

E. Miranda, Takamasa Kawanago, Kuniyuki Kakushima, J. Suñé, Hiroshi Iwai. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. Microelectronics Reliability, 52(9-10):1909-1912, 2012. [doi]

Abstract is missing.

runs on WebDSL