E. Miranda, Takamasa Kawanago, Kuniyuki Kakushima, J. Suñé, Hiroshi Iwai. Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown. Microelectronics Reliability, 52(9-10):1909-1912, 2012. [doi]
@article{MirandaKKSI12,
title = {Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown},
author = {E. Miranda and Takamasa Kawanago and Kuniyuki Kakushima and J. Suñé and Hiroshi Iwai},
year = {2012},
doi = {10.1016/j.microrel.2012.06.012},
url = {http://dx.doi.org/10.1016/j.microrel.2012.06.012},
researchr = {https://researchr.org/publication/MirandaKKSI12},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {52},
number = {9-10},
pages = {1909-1912},
}