P. K. Hurley - researchr alias

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Viewing Publication 1 - 11 from 11

2018

High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down ApproachD. A. J. Millar, X. Li, U. Peralagu, M. J. Steer, I. M. Pavey, G. Gaspar, M. Schmidt, P. K. Hurley, I. G. Thayne. drc 2018: 1-2 [doi]

2013

Direct observation of the generation of breakdown spots in MIM structures under constant voltage stressX. Saura, D. Moix, Jordi Suñé, P. K. Hurley, Enrique Miranda. mr, 53(9-11):1257-1260, 2013. [doi]

2010

Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statisticsE. Miranda, E. O Connor, P. K. Hurley. mr, 50(9-11):1294-1297, 2010. [doi]

2009

Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacksE. Miranda, J. Martin-Martinez, E. O Connor, G. Hughes, P. Casey, K. Cherkaoui, S. Monaghan, R. Long, D. O Connell, P. K. Hurley. mr, 49(9-11):1052-1055, 2009. [doi]

2007

2005

Electrical characterization of HfO::2:: films obtained by UV assisted injection MOCVDJ. M. Decams, H. Guillon, C. Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, B. J. O Sullivan, M. Modreanu, P. K. Hurley. mr, 45(5-6):929-932, 2005. [doi]

Post deposition UV-induced O::2:: annealing of HfO::2:: thin filmsQ. Fang, I. Liaw, M. Modreanu, P. K. Hurley, I. W. Boyd. mr, 45(5-6):957-960, 2005. [doi]

Optical and electrical characterization of hafnium oxide deposited by MOCVDY. Lu, Octavian Buiu, Steve Hall, P. K. Hurley. mr, 45(5-6):965-968, 2005. [doi]

2001

Flat band voltage shift and oxide properties after rapid thermal annealingB. J. O Sullivan, P. K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven. mr, 41(7):1053-1056, 2001. [doi]

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