Abstract is missing.
- The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on DiamondJinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye. 1-2 [doi]
- High Performance, Sub-thermionic MoS2 Transistors using Tunable Schottky ContactsS. Bhattacharjee, K. L. Ganapathi, S. Mohan, N. Bhat. 1-2 [doi]
- High-Sensitive and Selective Detection of Human-Infectious Influenza Virus Using Biomimetic Graphene Field-Effect TransistorT. Ono, T. Kawata, Y. Kanai, Y. Ohno, K. Maehashi, K. Inoue, Y. Watanabe, S. Nakakita, Y. Suzuki, T. Kawahara, K. Matsumoto. 1-2 [doi]
- High Performance Complementary Black Phosphorus FETs and Inverter Circuits Operating at Record-Low VDD down to 0.2VPeng Wu, Jörg Appenzeller. 1-2 [doi]
- 2.3 kV Field-Plated Vertical Ga2O3 Schottky Rectifiers and 1 a Forward Current with 650 V Reverse Breakdown Ga2O3 Field-Plated Schottky Barrier DiodesJiancheng Yang, Fan Ren, Marko Tadjer, Stephen J. Pearton, Akita Kuramata. 1-2 [doi]
- Fabrication and Characterization of a Fully Si Compatible Forming-Free GeOxResistive Switching Random-Access MemoryJae-Yoon Lee, Youngmin Kim, Ikhyeon Kworn, Il Hwan Cho, Jae Yeon Lee, Soo Gil Kim, Seongjae Cho. 1-2 [doi]
- High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down ApproachD. A. J. Millar, X. Li, U. Peralagu, M. J. Steer, I. M. Pavey, G. Gaspar, M. Schmidt, P. K. Hurley, I. G. Thayne. 1-2 [doi]
- Silicon Carbide Power Devices: A 35 Year Journey from Conception to CommercializationB. Jayant Baliga. 1-2 [doi]
- Effective Drive Current in Scaled FinFET and NSFET CMOS InvertersA. Razavieh, Y. Deng, Peter Zeitzoff, M. R. Na, J. Frougier, G. Karve, D. E. Brown, T. Yamashita, E. J. Nowak. 1-2 [doi]
- Theory and Design of Electron Blocking Layers for III-N Based Laser Diodes by Numerical SimulationKaran Mehta 0003, Yuh-Shiuan Liu, Jialin Wang, Hoon Jeong, Theeradetch Detchprohm, Young Jae Park, Shyh-Chiang Shen, Russell D. Dupuis, P. Douglas Yoder. 1-2 [doi]
- Recent Advances in Ga2O3 MOSFET TechnologiesMasataka Higashiwaki, Man Hoi Wong, Takafumi Kamimura, Yoshiaki Nakata, Chia-Hung Lin, Ravikiran Lingaparthi, Akinori Takeyama, Takahiro Makino, Takeshi Ohshima, Naoki Hatta, Kuniaki Yagi, Ken Goto, Kohei Sasaki, Shinya Watanabe, Akito Kuramata, Shigenobu Yamakoshi, Keita Konishi, Hisashi Murakami, Yoshinao Kumagai. 1 [doi]
- Development of hierarchical simulation framework for design and optimization of molecular based flash cellVihar P. Georgiev. 1-2 [doi]
- Doping-free complementary inverter enabled by 2D WSe2 electrostatically-doped reconfigurable transistorsGiovanni V. Resta, Yashwanth Balaji, Dennis Lin, Iuliana P. Radu, Francky Catthoor, Pierre-Emmanuel Gaillardon, Giovanni De Micheli. 1-2 [doi]
- Reliable High-Quality Metal-Embedded h-BN Contacts to p-type WSe2Younghun Jung, Min Sup Choi, Abhinandan Borah, Ankur Nipane, Won Jong Yoo, James Hanel, James T. Teherani. 1-2 [doi]
- Probing Self-Heating in RRAM Devices by Sub-100 nm Spatially Resolved ThermometrySanchit Deshmukh, Miguel Munoz-Rojo, Eilam Yalon, Sam Vaziri, Eric Pop. 1-2 [doi]
- A FeFET Based Processing-In-Memory Architecture for Solving Distributed Least-Square OptimizationsInsik Yoon, Muya Chang, Kai Ni 0004, Matthew Jerry, Samantak Gangopadhyay, Gus Henry Smith, Tomer Hamam, Vijayakrishan Narayanan, Justin Romberg, Shih-Lien Lu, Suman Datta, Arijit Raychowdhury. 1-2 [doi]
- Steep-Slope Hysteresis-Free Negative-Capacitance 2D TransistorsPeide D. Ye. 1 [doi]
- Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETsWonil Chung, Mengwei Si, Peide D. Ye. 1-2 [doi]
- 2D RF Electronics: from devices to circuits - challenges and applicationsD. Fadi, W. Wei, Emiliano Pallecchi, M. Anderson, J. Stake, M. Deng, Sébastien Fregonese, Thomas Zimmer, Henri Happy. 1-2 [doi]
- Realization of the First GaN Based Tunnel Field-Effect TransistorAlexander Chaney, Henryk Turski, Kazuki Nomoto, Qingxiao Wang, Zongyang Hu, Moon Kim, Huili Grace Xing, Debdeep Jena. 1-3 [doi]
- GaN Lateral Schottky Diodes with High Baliga's Figure-of-Merit Utilizing Self-Terminated, Low Damage Anode Recessing TechnologyJ. Gao, Y. Jin, B. Xie, C. P. Wen, Y. Hao, M. Wang. 1-2 [doi]
- CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion SensitivityJunrui Zhang, Francesco Bellando, Maneesha Rupakula, Erick Garcia-Cordero, N. Ebejer, J. Longo, Fabien Wildhaber, Hoel Guerin, Adrian Mihai Ionescu. 1-2 [doi]
- High Voltage Vertical Gallium Nitride Pseudo-Junction-Barrier-Schottky Diode with Ion ImplantationSizhen Wang, Alex Q. Huang. 1-2 [doi]
- Mechanistic Analysis of Oxygen Vacancy Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal StructuresHandan Yildirim, Ruth Pachter. 1-2 [doi]
- Paper electronics: a sustainable multifunctional platformElvira Fortunato, Diana Gaspar, Inês Cunha, Manuel Mendes, Antonio Vicente, Hugo Águas, Ana Carolina Marques, Ana Pimentel, Daniela Nunes, Luís Pereira, Rodrigo Martins. 1-2 [doi]
- Manufacturable Heterogeneous Integration for Flexible CMOS ElectronicsMuhammad M. Hussain, Sohail Faizan Shaikh, Galo A. Torres Sevilla, Joanna M. Nassar, Aftab M. Hussain, Rabab R. Bahabry, Sherjeel M. Khan, Arwa T. Kutbee, Jhonathan P. Rojas, Mohamed T. Ghoneim, Melvin Cruz. 1-2 [doi]
- Three-Dimensionally Structured BetavoltaicsJohn W. Murphy, Clint D. Frye, Fang Qian, John D. Despotopulos, Roger A. Henderson, Qinghui Shao, Kareem Kazkaz, Lars F. Voss, Rebecca J. Nikolic. 1-2 [doi]
- A Three-Terminal Edge-Triggered Mott SwitchAhmedullah Aziz, Roman Engel-Herbert, Sumeet Kumar Gupta, Nikhil Shukla. 1-2 [doi]
- Effects of single vacancy defects on 1/f noise in grapbene/b-BN FETsTing Wu, Abdullah Alharbi, Takashi Taniguchi, Kenji Watanabe, Davood Shahricrdi. 1-2 [doi]
- Drift-enhanced Unsupervised Learning with PCM SynapsesYuhan Shi, Sangheon Oh, Xin Liu, Duygu Kuzum. 1-2 [doi]
- Design and Demonstration of (AlxGal-x)2O3/Ga2O3Double Heterostructure Field Effect Transistor (DHFET)Yuewei Zhang, Zhanbo Xia, Chandan Joishi, Siddharth Rajan. 1-2 [doi]
- Color-Filtered Si Photodiode Array for On-Chip Calcium Imaging in Living CellsZ. Xiong, F. J. Hwang, D. Mao, G.-L. Li, G. Xu. 1-2 [doi]
- Efficient Metal-Halide Perovskite Micro Disc Lasers Integrated in a Silicon Nitride Photonic PlatformP. J. Cegielski, S. Neutzner, C. Porschatis, M. Gandini, D. Schall, C. A. R. Perini, J. Bolten, S. Suckow, B. Chmielak, A. Petrozza, T. Wahlbrink, M. C. Lemme, A. L. Giesecke. 1-2 [doi]
- 2 devices: Effect of the growth substrateAbdullah Alharbi, Davood Shahrjerdi. 1-2 [doi]
- Vertical GaN-on-GaN p-n Diodes with 10-A Forward Current and 1.6 kV Breakdown VoltageJ. Wang, L. Cao, J. Xie, E. Beam, C. Youtsey, R. McfCarthy, L. Guido, Patrick Fay. 1-2 [doi]
- Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect EngineeringAmritesh Rai, Jun-Hong Park, Chenxi Zhang, Iljo Kwak, Steven Wolf, Suresh Vishwanath, Xinyu Lin, Jacek Furdyna, Huili Grace Xing, Kyeongjae Cho, Andrew C. Kummel, Sanjay K. Banerjee. 1-2 [doi]
- WSe2/ReS2 vdW Heterostructure for Versatile Optoelectronic ApplicationsAbin Varghese, Denis Joseph, Sayantan Ghosh, Kartikey Thakar, Nikhil Mcdhckar, Saurabh Lodha. 1-2 [doi]
- All MOCVD grown 250 nm gate length Al0.70Ga0.30N MESFETsHao Xue, Towhidur Razzak, Seongmo Hwang, Antwon Coleman, Sanyam Bajaj, Yuewei Zhang, Zane Jamal-Eddin, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu. 1-2 [doi]
- 2- Transistor Schmitt Trigger based on 2D Electrostrictive Field Effect TransistorsNiharika Thakuria, Daniel Schulmarr, Saptarshi Das, Sumeet Kumar Gupta. 1-2 [doi]
- Approaches for Dynamic IR N ano-Optics using 2D MaterialsJoshua D. Caldwell. 1-2 [doi]
- Domain Formation in Ferroelectric Negative Capacitance DevicesM. Hoffmann, Stefan Slesazeck, Thomas Mikolajick. 1-2 [doi]
- 1.5 kV Vertical Ga2O3 Trench-MIS Schottky Barrier DiodesWenshen Li, Kazuki Nomoto, Zongyang Hu, Nicholas Tanen, Kohei Sasaki, Akito Kuramata, Debdeep Jena, Huili Grace Xing. 1-2 [doi]
- 2/Pt Threshold SwitchAhmedullah Aziz, Nikhil Shukla, Alan C. Seabaugh, Suman Datta, Sumeet Gupta. 1-2 [doi]
- A Vacuum Multi-Finger Transistor in CMOS TechnologyShabnam Ghotbi, Hossein Pajouhi, Saeed Mohammadi. 1-2 [doi]
- Optical Gain and Loss Measurements of Semipolar III-nitride Laser Diodes with ITO/thin-p-GaN Cladding LayersShlomo Mehari, Daniel A. Cohen, Daniel L. Becerrea, Claude Weisbuch, Shuji Nakamura, Steven P. DenBaars. 1-2 [doi]
- Localized Heating in Mo'I'ei-Based Resistive Memory DevicesIsha M. Datye, Miguel Munoz-Rojo, Eilam Yalon, Michal J. Mleczko, Eric Pop. 1-2 [doi]
- A unified current-voltage and charge-voltage model of quasi-ballistic III-nitride HEMTs for RF applicationsKexin Li, Shaloo Rakheja. 1-2 [doi]
- 710 V Breakdown Voltage in Field Plated Ga203 MOSFETKe Zeng, Abhishek Vaidya, Uttam Singisetti. 1-2 [doi]
- Monolithic Integration of III -V on silicon for photonic and electronic applicationsSvenja Mauthe, H. Schmid, B. Mayer, S. Wirths, Clarissa Convertino, Yannick Baumgartner, Lukas Czornomaz, Marilyne Sousa, P. Staudinger, Heike Riel, Kirsten E. Moselund. 1-2 [doi]
- CMOS Technology with Integrated Carbon-Nanotube Contact PlugsClarissa C. Prawoto, Suwen Li, Mansun Chan. 1-2 [doi]
- Energy-Efficient, Two-Dimensional Analog Memory for Neuromorphic ComputingMohammad T. Sharbati, Yanhao Du, Feng Xiong. 1-2 [doi]
- Flexible Thin-Film PZT Ultrasonic TransducersTianning Liu, Jeong Nyeon Kim, Susan E. Trolier-McKinstry, Thomas N. Jackson. 1-2 [doi]
- Three-Dimensional Integration of Multi-Channel MoS2 Devices for High Drive Current FETsRuiping Zhou, Jörg Appenzeller. 1-2 [doi]
- A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etchingPatrick Waltereit, Marina Preschle, Stefan Muller, Lutz Kirste, Heiko Czap, Joachim Ruster, Michael Dammann, Richard Reiner. 1-2 [doi]
- 0.7N GateE. A. Douglas, B. A. Klein, A. A. Allerman, Albert G. Baca, T. R. Fortune, A. M. Armstrong. 1-2 [doi]
- Nonlinearity Enhancement by Positive Pulse Stress in Multilevel Cell Selectorless RRAM ApplicationsYing-Chen Chen, Xiaohan Wu, Yao-Feng Chang, Jack C. Lee. 1-2 [doi]
- Unique Features of Electron Transport and Low-Frequency Noise in Quasi-One-Dimensional ZrTe3 van der Waals NanoribbonsAdane K. Geremew, Matthew A. Bloodgood, Tina T. Salguero, Sergey Rumyantsev, Alexander A. Balandin. 1-2 [doi]
- Nanoscale Scanning Probe Thermometry of TaOe-based selector devicesDasheng Li, Georg Ramer, Phoebe Yeoh, Brian Hoskins, Yuanzhi Ma, James A. Bain, Andrea Centrone, Marek Skowronski. 1-2 [doi]
- Experimental Investigation of N-Channel Oxygen-Inserted (OI) Silicon Channel MOSFETs with High-K/Metal Gate StackJ. A. Smith, H. Takeuchi, R. Stephenson, Y. A. Chen, M. Hytha, R. J. Mears, S. Datta. 1-2 [doi]
- Epitaxial Gd2O3on Si (111) Substrate by Sputtering to Enable Low Cost SOIK. R. Khiangte Amlta, A. Laha, S. Mahapatra, U. Gangway. 1-2 [doi]
- 9 GHz passively mode locked quantum dot lasers directly grown on SiSongtao Liu, Justin C. Norman, Daehwan Jung, M. J. Kennedy, Arthur C. Gossard, John E. Bowers 0001. 1-2 [doi]
- Thermal Performance Improvement of GaN-on-Diamond High Electron Mobility TransistorsMarko J. Tadjer, Travis J. Anderson, James C. Gallagher, Peter E. Raad, Pavel L. Komarov, Andrew D. Koehler, Karl D. Hobart, Fritz J. Kub. 1-2 [doi]
- Gate Leakage in Non-Volatile Ferroelectric Transistors: Device-Circuit ImplicationsSandeep Krishna Thirumala, Sumeet Kumar Gunta. 1-2 [doi]
- First demonstration of vacuum-sealed fully integrated BEOL-compatible field emission devices for Si integrated high voltage applicationsNishita Deka, Vivek Subramanian. 1-2 [doi]
- Large Room Temperature Charge-to-Spin Conversion Efficiency in Topological Insulator/CoFeB bilayersQiming Shao, Guoqiang Yu, Lei Pan, Xiaoyu Che, Yabin Fan, Koichi Murata, Qing-Lin He, Tianxiao Nie, Xufeng Kou, Kang L. Wang. 1-2 [doi]
- 3 Gbps Free Space Optical Link based on Integrated Indium Phosphide TransmitterHongwei Zhao, Sergio Pinna, Bowen Song, Ludovico Megalini, Simone Tommaso Suran Brunelli, Larry Coldren, Jonathan Klamkin. 1-2 [doi]
- Tunnel junctions for two-color nitride light emitting diodes and laser diodes grown by plasma assisted molecular beam epitaxyCzeslaw Skierbiszewski, Henryk Turski, M. Zak, K. Nowakowski-Szkudlarek, Grzegorz Muziol, M. Siekacz, A. Feduniewicz-Zmuda, M. Sawicka. 1-2 [doi]
- Optoelectronics based on Vertical Transport in Multi-layer MoS2Shubhadeep Bhattacharjee, Pranandita Biswas, Swan Solanke, Rangarajan Muralidharan, Digbijoy Nath, Navakanta Bhat. 1-2 [doi]
- Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power AmplifiersYihao Fang, Jonathan P. Sculley, Miguel E. Urteaga, Andy D. Carter, Paul D. Yoder, Mark J. W. Rodwell. 1-2 [doi]
- The End of the Road for 2D Scaling of Silicon CMOS and the Future of Device TechnologyH.-S. Philip Wong. 1-2 [doi]
- On the Possibility of Dynamically Tuning and Collapsing the Ferroelectric Hysteresis/Memory Window in an Asymmetric DG MOS Device: A Path to a Reconfigurable Logic-Memory DeviceNujhat Tasneem, Asif I. Khan. 1-2 [doi]
- Novel 2-D Materials for Tunneling FETs: an Ab-initio StudyC. Klinkert, A. Szabo, D. Campi, C. Stieger, Nicola Marzari, Mathieu Luisier. 1-2 [doi]
- Graphene-Channel-Transistor Terahertz AmplifierStephane Boubanga-Tombet, Deepika Yadav, Wojciech Knap, Vyacheslav V. Popov, Taiichi Otsuji. 1-2 [doi]
- Self-powered Flexible Strain Sensor with Graphene/P(VDF-TrFE) HeterojunctionSoaram Kim, Sean Gorman, Yongchang Dong, Apparao M. Rao, Goutam Koley. 1-2 [doi]
- Redefining Responsivity in Graphene-based Schottky DiodesS. Riazimeher, S. Kataria, J. M. Gonzalez, M. Shaygan, S. Suckow, Olof Engström, F. J. G. Ruiz, A. Godoy, Max C. Lemme. 1-2 [doi]
- High-speed 1310 nm Hybrid Silicon Quantum Dot Photodiodes with Ultra-low Dark CurrentBassem Tossoun, Geza Kurczveil, Chong Zhang, Di Liang, Raymond G. Beausoleil. 1-2 [doi]
- A wired-AND transistor: Polarity controllable FET with multiple inputsM. Simon, Jens Trommer, B. Liang, D. Fischer, Tim Baldauf, M. B. Khan, Andre Heinzig, M. Knaut, Y. M. Georgiev, A. Erbe, J. W. Bartha, T. Mikolajick, W. M. Weber. 1-2 [doi]
- Bias Stress Stability of Carbon Nanotube Transistors with Implications for SensorsSteven G. Noyce, James L. Doherty, Aaron D. Franklin. 1-2 [doi]
- Surface Passivated InN Nanowire and Graphene Heterojunction Based MemtransistorIfat Jahangir, Md. A. Uddin, A. K. Singh, A. Franken, M. V. S. Chandrashekha, G. Koley. 1-2 [doi]
- An Improved 1T-DRAM Cell Using TiO2as the Source and Drain of an n-Channel PD-SOI MOSFETDibyendu Chatterjee, Anil Kottantharayil. 1-2 [doi]
- Exploring Silver Contact Morphologies in Printed Carbon Nanotube Thin-Film TransistorsJorge A. Cardenas, Sophia Upshaw, Matthew J. Catenaccr, Benjamin J. Wiley, Aaron D. Franklin. 1-2 [doi]
- First Demonstration of WSe2 CMOS Inverter with Modulable Noise Margin by Electrostatic DopingChin-Sheng Pang, Zhihong Chen. 1-2 [doi]
- Spin-based majority gates for logic applicationsIuliana P. Radu. 1-2 [doi]
- Ferroelectric Aluminum-Doped Hafnium Oxide for Memory ApplicationsHojoon Ryu, Kai Xu, Ji Guo, Wenjuan Zhu. 1-2 [doi]
- Challenges and opportunities in integration of 2D materials on 3D substrates: Materials and device perspectivesMahesh R. Neupane, Dmitry Ruzmetov, Robert Burke, A. Glen Birdwell, Decarlos Taylor, Matthew Chin, Terrance O'Regan, Frank Crowne, Barbara Nichols, Pankaj Shah, Edward Byrd, Tony Ivanov. 1-2 [doi]
- High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping TechniqueGang Qiu, Mengwei Si, Yixiu Wang, Xiao Lyu, Wenzhuo Wu, Peide D. Ye. 1-2 [doi]
- Effect of Gate Oxide Defects on Tunnel Transistor RF PerformanceMarkus Hellenbrand, Elvedin Memisevic, J. Svensson, A. Krishnaraja, Erik Lind, Lars-Erik Wernersson. 1-2 [doi]
- 1.1 kV vertical p-i-n GaN-on-sapphire diodesSara E. Harrison, Qinghui Shao, Clint D. Frye, Lars F. Voss, Rebecca J. Nikolic. 1-2 [doi]
- 2 Field Effect TransistorsYuqi Zhu, Feng Zhang, Jörg Appenzeller. 1-2 [doi]
- Modeling of electron transport in nanoribbon devices using Bloch wavesAkash A. Laturia, Maarten L. Van De Put, Massimo V. Fischetti, William G. Vandenberghe. 1-2 [doi]
- Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect TransistorsSami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye. 1-2 [doi]
- Recent Progress in Spintronics and DevicesKang L. Wang. 1-2 [doi]
- Low Power Nanoscale Switching of VO2using Carbon Nanotube HeatersStephanie M. Bohaichuk, Miguel Munoz-Rojo, Gregory Pitner, Connor McClellan, Feifei Lian, Jason Li, Jaewoo Jeong, Mahesh Samant, Stuart Parkin, H.-S. Philip Wong, Eric Pop. 1-2 [doi]
- Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memorySohya Kudoh, Shun'ichiro Ohmi. 1-2 [doi]
- Room temperature resonant tunneling in metal-insulator-insulator-insulator-semiconductor devicesJ. Molina-Reyes, H. Uribe-Vargas. 1-2 [doi]
- 10On/Off Current RatioYury Yu. Illarionov, Kirby K. H. Smithe, Michael Waltl, Ryan W. Grady, S. Deshmukh, Eric Pop, Tibor Grasser. 1-2 [doi]
- Impact of calibrated band-tails on the subthreshold swing of pocketed TFETsJasper Bizindavyi, Anne S. Verhulst, Bart Soree, Guido Groeseneken. 1-2 [doi]
- Energy-Efficient Phase Change Memory Programming by Nanosecond PulsesEilam Yalon, Kye Okabe, Christopher M. Neumann, H.-S. Philip Wong, Eric Pop. 1-2 [doi]
- Tunable Random Number Generation Using Single Superparamagnet with Perpendicular Magnetic AnisotropyPunyashloka Debashis, Zhihong Chen. 1-2 [doi]
- Investigation of Threshold Switch OFF -State Resistance on Performance Enhancement in 2D Mos2 Phase-FETsBenjamin Grisafe, Suman Datta. 1-2 [doi]
- Artificial Neuron using MoS2/Graphene Threshold Switching MemristorsHirokjyoti Kalita, Adithi Krishnaprasad, Nitin Choudhary, Sonali Das, Hee-Suk Chung, Yeonwoong Jung, Tania Roy. 1-2 [doi]
- Electrically Switchable Infrared Nanophotonic Devices with VO2Nikita A. Butakov, Mark Knight, Tomer Lewi, Prasad P. Iyer, Hamid Chorsi, Javier del Valle Granda, Yoav Kalcheim, Phillip Hon, Ivan K. Schuller, Jon A. Schuller. 1-2 [doi]
- Fast Recovery Performance of β-Ga2O3 Trench MOS Schottky Barrier DiodesAkio Takatsuka, Kohei Sasaki, Daiki Wakimoto, Quang Tu Thieu, Yuki Koishikawa, Jun Arima, Jun Hirabayashi, Daisuke Inokuchi, Yoshiaki Fukumitsu, Akito Kuramata, Shigenobu Yamakoshi. 1-2 [doi]
- 6: Synthesis, ReRAM, and FeRAMPai-Ying Liao, Mengwei Si, Gang Qiu, Peide D. Ye. 1-2 [doi]
- Towards scalable silicon quantum computingMaud Vinet, Louis Hutin, B. Bertrand, H. Bohuslavskyi, A. Corna, A. Amisse, A. Crippa, L. Bourdet, Romain Maurand, Sylvain Barraud, M. Urdampilleta, C. Bauerle, Marc Sanquer, Xavier Jehl, Y.-M. Niquer, S. De Franceschi, T. Meunier. 1-2 [doi]
- Novel approach for a monolithically integrated GaN cascode with minimized conduction and switching lossesH. Hahn, H. Yacoub, T. Zweipfennig, G. Lukens, S. Kotzea, A. Debald, A. N. Oculak, R. Negra, Holger Kalisch, Andrei Vescan. 1-2 [doi]
- An Ultra Energy Efficient Neuron enabled by Tunneling in Sub-threshold Regime on a Highly Manufacturable 32 nm SOI CMOS TechnologyTanmay Chavan, S. Dutta, Nihar R. Mohapatra, Udayan Ganguly. 1-2 [doi]
- Quantifying the thermal boundary conductance of 2D-substrate interfacesCameron J. Foss, Zlatan Aksamija. 1-2 [doi]
- All CVD Boron Nitride Encapsulated Graphene FETsHimadri Pandey, M. Shaygan, S. Sawallich, S. Kataria, M. Otto, Z. Wang, M. Nagel, Daniel Neumaier, Max C. Lemme. 1-2 [doi]
- 2 TransistorsNatasha Goyal, David M. A. Mackenzie, Himani Jawa, Dirch H. Petersen, Saurabh Lodha. 1-2 [doi]
- Modeling and Comparative Analysis of Hysteretic Ferroelectric and Anti-ferroelectric FETsAtanu K. Saha, Sumeet Kumar Gupta. 1-2 [doi]
- Insinhts on the DC Characterization of Ferroelectric Field-Effect-TransistorsMatthew Jerry, Jeffrey A. Smith, Kai Ni 0004, Atanu Saha, Sumeet Kumar Gupta, Suman Datta. 1-2 [doi]
- 2) charge release in a CVD-grown WSe2 FET incorporating a PEO: CsCI04 side gateMina Asghari Heidarlou, B. Jariwala, Paolo Paletti, S. Rouvimov, J. A. Robinsorr, Susan K. Fullerton-Shirey, Alan C. Seabaugh. 1-2 [doi]
- Photo-oxidized HfS2 - An embeddable and writable high-k dielectric for flexible Van der Waals nano-electronicsNamphung Peimyoo, Jake Mehew, Matt D. Barnes, Adolfo De Sanctis, Iddo Amit, Janire Escolar, Konstantinos Anastasiou, Ali Gholina, Aidan P. Rooney, Sarah Haigh, Saverio Russo, Monica Felicia Craciun, Freddie Withers. 1-2 [doi]
- Sub-Thermionic Steep Switching in Hole-Doped WSe2 TransistorsConnor J. McClellan, Eilam Yalon, Lili Cai, Saurabh Suryavanshi, Xiaolin Zheng, Eric Pop. 1-2 [doi]
- High performance black phosphorus field-effect transistors with vacuum-annealed low-resistance Ohmic contactHyunik Park, Jinho Bae, Jihyun Kim. 1-2 [doi]