Sanjay K. Banerjee - researchr alias

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Viewing Publication 1 - 7 from 7

2022

Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devicesS. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay K. Banerjee. drc 2022: 1-2 [doi]

2021

Machine Learning for Statistical Modeling: The Case of Perpendicular Spin-Transfer-Torque Random Access MemoryUrmimala Roy, Tanmoy Pramanik, Subhendu Roy, Avhishek Chatterjee, Leonard F. Register, Sanjay K. Banerjee. todaes, 26(3), 2021. [doi]

2019

Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect TransistorsOmar B. Mohammed, Leonard Franklin Register, Sanjay K. Banerjee. drc 2019: 129-130 [doi]

Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devicesJacob N. Rohan, Pingping Zhuang, S. S. Teja Nibhanupudi, Sanjay K. Banerjee, Jaydeep P. Kulkarni. drc 2019: 103-104 [doi]

2018

Enhanced P-Type Behavior in 2D WSe2 via Chemical Defect EngineeringAmritesh Rai, Jun-Hong Park, Chenxi Zhang, Iljo Kwak, Steven Wolf, Suresh Vishwanath, Xinyu Lin, Jacek Furdyna, Huili Grace Xing, Kyeongjae Cho, Andrew C. Kummel, Sanjay K. Banerjee. drc 2018: 1-2 [doi]

2010

Graphene for CMOS and Beyond CMOS ApplicationsSanjay K. Banerjee, Leonard Franklin Register, Emanuel Tutuc, Dipanjan Basu, Seyoung Kim, Dharmendar Reddy, Allan H. MacDonald. pieee, 98(12):2032-2046, 2010. [doi]

1990

A universal MOSFET mobility degradation model for circuit simulationGregory Munson Yeric, A. F. Tasch Jr., Sanjay K. Banerjee. tcad, 9(10):1123-1126, 1990. [doi]

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