Table of Contents

• Photonic Curing: Rapid Thermal Processing of Oxide Thin-film Transistors on PlasticNeel Chatterjee, Adam M. Weidling, Sarah L. Swisher. 1-2 [doi]
• Non-Volatile Resistive Switching in PtSe2-Based Crosspoint MemristorsDennis Braun, Sebastian Lukas, Lukas Völkel, Oliver Hartwig, Maximilian Prechtl, Melkamu Belete, Satender Kataria, Thorsten Wahlbrink, Alwin Daus, Georg S. Duesberg, Max C. Lemme. 1-2 [doi]
• Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate StructureAdam Charnas, Jackson Anderson, Jie Zhang, Dongqi Zheng, Dana Weinstein, Peide D. Ye. 1-2 [doi]
• Cryogenic Memory Array based on Ferroelectric SQUID and Heater CryotronShamiul Alam, Md. Mazharul Islam 0006, Md. Shafayat Hossain, Kai Ni 0004, Vijaykrishnan Narayanan, Ahmedullah Aziz. 1-2 [doi]
• Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VT Devices Fabrication for Hardware Security ApplicationsGiulio Galderisi, Thomas Mikolajick, Jens Trommer. 1-2 [doi]
• Ultra-Wide Bandgap Semiconductor Transistors for mm-wave ApplicationsChandan Joishi, Nidhin Kurian Kalarickal, Wahidur Rahman, Wu Lu, Siddharth Rajan. 1 [doi]
• Trapping Phenomena in GaN HEMTs with Fe- and C-doped BufferKexin Li, Takashi Matsuda, Eiji Yagyu, Koon Hoo Teo, Shaloo Rakheja. 1-2 [doi]
• A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field RangeWenshen Li, Debdeep Jena, Huili Grace Xing. 1-2 [doi]
• Design Space Analysis of Superconducting Nanowire-based Cryogenic OscillatorsMd. Mazharul Islam 0006, Shamiul Alam, Nikhil Shukla, Ahmedullah Aziz. 1-2 [doi]
• MoS2/Quantum Dot Hybrid Photodetectors on Flexible SubstratesOzan Yakar, Burkay Uzlu, Daniel S. Schneider, Annika Grundmann, Sören Becker, Jan S. Niehaus, Hendrik Schlicke, Michael Heuken, Holger Kalisch, Andrei Vescan, Zhenxing Wang, Max C. Lemme. 1-2 [doi]
• Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS TransistorsTomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, Ken Uchida. 1-2 [doi]
• Statistical Analysis of 2T1R Gain-Cell RRAM Bitcell for Area Efficient, High-Performance, and Reliable Multi-level Cell OperationRishab Mehra, S. S. Teja Nibhanupudi, Jaydeep P. Kulkarni. 1-2 [doi]
• Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVMSaikat Chakraborty, Jaydeep P. Kulkarni. 1-2 [doi]
• Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) SubstratesBao-Yuan Wang, Chin-Ya Su, Tian-Li Wu. 1-2 [doi]
• Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage OperationJ. W. Shin, M. Tanuma, J. Pyo, S. Ohmi. 1-2 [doi]
• Tunneling transport in WSe2-MoS2 heterojunction transistor enabled by a two-dimensional device architecturePhanish Chava, Kenji Watanabe, Takashi Taniguchi, Thomas Mikolajick, Manfred Helm, Artur Erbe. 1-2 [doi]
• Ambient Effects on Reprogrammable Read-only Selector-free Memory for the Embedded NVM ApplicationsYing-Chen Chen, Justin Stouffer, Favian Villanueva, Jordan Beverly. 1-2 [doi]
• SiGeSn Technology for All-Group-IV PhotonicsShui-Qing Yu, Gregory Salamo, Wei Du, Baohua Li, Greg Sun, Richard A. Soref, Yong-Hang Zhang, Guo-En Chang. 1-2 [doi]
• The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application EnvironmentsPhilip G. Neudeck, David J. Spry, Michael J. Krasowski, Liangyu Chen. 1-2 [doi]
• AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devicesJames Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer. 1-2 [doi]
• Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substratesA. E. Islam, A. Miesle, M. Dietz, Kevin D. Leedy, S. Ganguli, G. Subramanyam, W. Wang, N. Sepelak, D. Dryden, Stephen E. Tetlak, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak. 1-2 [doi]
• Nanoscale Devices Based on Two-dimensional and Ferroelectric MaterialsZijing Zhao, Kai Xu, Jialun Liu, Wei Jiang, Hojoon Ryu, Shaloo Rakheja, Tony Low, Wenjuan Zhu. 1-2 [doi]
• Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory: Implications for Partial State StorageMir Muntasir Hossain, Pratyush Pandey, Akif Aabrar, Karla González-Serrano, Ted Moise, John Rodriguez, K. R. Udayakumar, Suman Datta, Alan C. Seabaugh. 1-2 [doi]
• High-performance TiO2 thin film transistors using TiO2 as both channel and dielectricJie Zhang, Yuping Zeng. 1-2 [doi]
• MFSFET with Ferroelectric HfN for Analog Memory ApplicationS. Ohmi, A. Ihara, M. Tanuma, J. Y. Pyo, J. W. Shin. 1-2 [doi]
• Breakdown Voltage Enhancement of GaN diodes with High-k DielectricVishank Talesara, Yuxuan Zhang, Junao Cheng, Hongping Zhao, Wu Lu. 1-2 [doi]
• Nanoscale HfO2-based memristive devices for neuromorphic computingSusanne Hoffmann-Eifert. 1-2 [doi]
• Impact of Corner Rounding on Quantum Confinement in GAA Nanosheet FETs for Advanced Technology NodesAnirban Kar, Swapna Sarker, Avirup Dasgupta, Yogesh Singh Chauhan. 1-2 [doi]
• Modeling of the Charge-Voltage Characteristics of AlScN/AlN/GaN HeterostructuresBohao Wu, Shaloo Rakheja. 1 [doi]
• Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel statesT. Stecconi, Youri Popoff, R. Guido, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia. 1-2 [doi]
• Polarization-Engineering of III-N mm-Wave Transistors for High Efficiency and LinearityPatrick Fay, Nivedhita Venkatesan, Jeong-sun Moon. 1-2 [doi]
• Controllable Defect Engineering in 2D-MoS2 for high-performance, threshold switching memristive devicesAsmita S. Thool, Sourodeep Roy, Abhishek Misra, Bhaswar Chakrabarti. 1-2 [doi]
• First Demonstration of Top-Gated ITO Transistors: Effect of Channel PassivationSumaiya Wahid, Alwin Daus, Jimin Kwon, Shengjun Qin, Jung-Soo Ko, Krishna C. Saraswat, H.-S. Philip Wong, Eric Pop. 1-2 [doi]
• An Experimentally Validated, Universal Memristor Model Enabling Temporal Neuromorphic ComputationBill Zivasatienraj, W. Alan Doolittle. 1-2 [doi]
• First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN SubstratesEungkyun Kim, Zexuan Zhang, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing. 1-2 [doi]
• Compact Model for Trap Assisted Tunneling based GIDLChetan K. Dabhi, Girish Pahwa, Sayeef S. Salahuddin, Chenming Hu. 1-2 [doi]
• Fully Epitaxial Ferroelectric III-Nitride Semiconductors: From Materials to DevicesPing Wang, Ding Wang, Shubham Mondal, Zetian Mi. 1-2 [doi]
• Superconducting Josephson Junction FET-based Cryogenic Voltage Sense AmplifierShamiul Alam, Md. Mazharul Islam 0006, Md. Shafayat Hossain, Ahmedullah Aziz. 1-2 [doi]
• Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium OxideThomas Mikolajick, Uwe Schroeder, Stefan Slesazeck. 1-2 [doi]
• Graphene waveguide-integrated thermal infrared emitterNour Negm, Sarah Zayouna, Shayan Parhizkar, Pen-Sheng Lin, Po-Han Huang, Stephan Suckow, Stephan Schröder, Eleonora De Luca, Floria Ottonello Briano, Arne Quellmalz, Frank Niklaus, Kristinn B. Gylfason, Max C. Lemme. 1-2 [doi]
• Gate-Tunable Resonant Tunneling in a Dual-Gated Twist-Controlled Double Monolayer Graphene-hBN HeterostructureKenneth Lin, Nitin Prasad, G. William Burg, Kenji Watanabe, Takashi Taniguchi, Emanuel Tutuc. 1-2 [doi]
• D-band frequency memristor switch based on monolayer boron nitrideSung-Jin Yang, Frank Makal, Paul Peterson, Jason Alikpala, Christopher J. Luth, Sanjay Kumar Banerjee, Andreas Roessler, Deji Akinwande. 1-2 [doi]
• A width-scalable SPICE compact model for GaN HEMTs including self-heating effectRaghvendra Dangi, Ahtisham Pampori, Pragya Kushwaha, Ekta Yadav, Santanu Sinha, Yogesh Singh Chauhan. 1-2 [doi]
• Free-Standing High Power GaN Multi-Fin Camel Diode VaractorsPo-Chun Chen, Peter M. Asbeck, Shadi A. Dayeh. 1-2 [doi]
• Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping LayersMarc Jaikissoon, Jerry A. Yang, Kathryn M. Neilson, Eric Pop, Krishna C. Saraswat. 1-2 [doi]
• Cryo-TRAM: Gated Thyristor based Capacitor-less DRAM for Cryogenic ComputingSaikat Chakraborty, Jaydeep P. Kulkarni. 1-2 [doi]
• Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devicesS. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay K. Banerjee. 1-2 [doi]
• Ge-based Mid-infrared integrated photonics platform for SensingSangHyeon Kim, Jinha Lim, Joonsup Shim, Dae-Myeong Geum. 1-2 [doi]
• Self-Heating characterization and modeling of 5nm technology node FinFETsShivendra S. Parihar, Jun Z. Huang, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan. 1-2 [doi]
• Bias Stress Stability of ITO Transistors and its Dependence on Dielectric PropertiesLauren Hoang, Alwin Daus, Sumaiya Wahid, Jimin Kwon, Jung-Soo Ko, Shengjun Qin, Mahnaz Islam, Krishna C. Saraswat, H.-S. Philip Wong, Eric Pop. 1-2 [doi]
• Improved Endurance with Electron-Only Switching in Ferroelectric DevicesZheng Wang, Nujhat Tasneem, Hang Chen, Shimeng Yu, Winston Chern, Asif Islam Khan. 1-2 [doi]
• Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stressBhawani Shankar, Ke Zeng, Brendan Gunning, Rafael Perez Martinez, Chuanzhe Meng, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar, Srabanti Chowdhury. 1-2 [doi]
• Artificial Neural Network Surrogate Models for Efficient Design Space Exploration of 14-nm FinFETsSurila Guglani, Avirup Dasgupta, Ming-Yen Kao, Chenming Hu, Sourajeet Roy. 1-2 [doi]
• Are Argon and Nitrogen Gases Really Inert to Graphene Devices?Jeevesh Kumar, Mayank Shrivastava. 1-2 [doi]
• Analysis of BTI in 300 mm integrated dual-gate WS2 FETsL. Panarella, Quentin Smets, D. Verreck, Tom Schram, Daire Cott, I. Asselberghs, Ben Kaczer. 1-2 [doi]