Eungkyun Kim, Zexuan Zhang, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing. First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]
Abstract is missing.