Eungkyun Kim, Zexuan Zhang, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing. First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]
@inproceedings{KimZSNHTJX22,
title = {First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates},
author = {Eungkyun Kim and Zexuan Zhang and Jashan Singhal and Kazuki Nomoto and Austin Hickman and Masato Toita and Debdeep Jena and Huili Grace Xing},
year = {2022},
doi = {10.1109/DRC55272.2022.9855776},
url = {https://doi.org/10.1109/DRC55272.2022.9855776},
researchr = {https://researchr.org/publication/KimZSNHTJX22},
cites = {0},
citedby = {0},
pages = {1-2},
booktitle = {Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022},
publisher = {IEEE},
isbn = {978-1-6654-9883-8},
}