Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers

Marc Jaikissoon, Jerry A. Yang, Kathryn M. Neilson, Eric Pop, Krishna C. Saraswat. Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]

Abstract

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