Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states

T. Stecconi, Youri Popoff, R. Guido, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia. Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]

Abstract

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