Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states

T. Stecconi, Youri Popoff, R. Guido, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia. Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. In Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. pages 1-2, IEEE, 2022. [doi]

@inproceedings{StecconiPGHFPHB22,
  title = {Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states},
  author = {T. Stecconi and Youri Popoff and R. Guido and Mattia Halter and Donato Francesco Falcone and Antonio La Porta and Folkert Horst and Laura Bégon-Lours and Marilyne Sousa and Bert J. Offrein and Valeria Bragaglia},
  year = {2022},
  doi = {10.1109/DRC55272.2022.9855784},
  url = {https://doi.org/10.1109/DRC55272.2022.9855784},
  researchr = {https://researchr.org/publication/StecconiPGHFPHB22},
  cites = {0},
  citedby = {0},
  pages = {1-2},
  booktitle = {Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022},
  publisher = {IEEE},
  isbn = {978-1-6654-9883-8},
}