Table of Contents

• GaN Integrated Circuits for Power ElectronicsNick Fichtenbaum. 1-26 [doi]
• p-Bits for Probabilistic ComputingSupriyo Datta. 35-36 [doi]
• High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN Source/Drain (Invited Paper)Han Wui Then, Sansaptak Dasgupta, Marko Radosavljevic, Sanaz Gardner, Seung-Hoon Sung, Paul Fischer. 39-40 [doi]
• Integration of Self-Biased Circulators on GaN/SiC for Ka-band RF applicationYongjie Cui, Yu Cao, Manyam Pilla, Edward Beam, Andy Xie, Cathy Lee, Andrew Ketterson, Michael Roach 0003, Anton Geiler, Michael Geiler, Lee Burns, Douglas Linkhart. 41-42 [doi]
• High Mobility and Drive Current ZnO Thin Film TransistorsSang H. Yoo, Enrique D. Gomez, Thomas N. Jackson. 43-44 [doi]
• Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector ContactAndrew D. Carter, Miguel E. Urteaga, Petra Rowell, Joshua Bergman, Andrea Arias. 45-46 [doi]
• Towards Vacuum-Less Operation of Nanoscale Vacuum Channel TransistorsGirish Rughoobur, Lay Jain, Akintunde Ibitayo Akinwande. 47-48 [doi]
• Process Dependent Switching Dynamics of Ferroelectric Hafnium ZirconatePratyush Pandey, Cristobal Alessandri, Alan C. Seabaugh. 49-50 [doi]
• Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect TransistorsFelix Winkler, Milan Pesic, Claudia Richter, Michael Hoffmann 0008, Thomas Mikolajick, Johann W. Bartha. 51-52 [doi]
• Steep Subthreshold Swing Originating from Gate DelayPaolo Paletti, Mina Asghari Heidarlou, Karla González-Serrano, Cristobal Alessandri, Alan C. Seabaugh. 53-54 [doi]
• Highly-Doped Through-Contact Silicon Epi Design at 3 nm nodeS. Mittal, A. Pal, M. Saremi, J. Ferrell, M. Haverty, T. Miyashita, N. Kim, E. M. Bazizi, B. Alexander, A. B. Sachid, B. Ayyagari. 55-56 [doi]
• Ferroelectrics, Negative Capacitance and Depolarization Field: What exactly is negative capacitance?Asif Islam Khan. 57-58 [doi]
• 2D materials in resistive memory and neuromorphic computing system applicationsWei D. Lu. 59-60 [doi]
• Printing h-BN Gate Dielectric for Flexible, Low-hysteresis Carbon Nanotube Thin-Film Transistors at Low TemperatureShiheng Lu, Jorge A. Cardenas, Robyn Worsley, Nicholas X. Williams, Joseph B. Andrews, Cinzia Casiraghi, Aaron D. Franklin. 61-62 [doi]
• Gigahertz Zinc-Oxide TFT-Based OscillatorsYoni Mehlman, Can Wu, Sigurd Wagner, Naveen Verma, James C. Sturm. 63-64 [doi]
• Vertical Sidewall MoS2 Growth and TransistorsConnor McClellan, Andrew C. Yu, Ching-Hua Wang, H.-S. Philip Wong, Eric Pop. 65-66 [doi]
• Emerging Low Dimensional Material Devices for Beyond von-Neumann ComputingHefei Liu, Xiaodong Yan, Huan Zhao, Han Wang. 67-68 [doi]
• III-V Lasers and Integrated Components Directly Grown on Silicon: Options for IntegrationKei May Lau. 69-70 [doi]
• High Power Indium Phosphide Photonic Integrated Circuit PlatformHongwei Zhao, Sergio Pinna, Fengqiao Sang, Simone Tommaso Suran Brunelli, Larry A. Coldren, Jonathan Klamkin. 71-72 [doi]
• Back-Gated Phototransistor Fabricated from Low Temperature InP Grown Directly on Amorphous Gate OxideDebarghya Sarkar, Sizhe Weng, Yunpeng Xu, Frank Greer, Rehan Kapadia. 73-74 [doi]
• Tunnel junctions for vertically integrated multiple nitrides laser diodesM. Siekacz, Grzegorz Muziol, H. Turski, K. Nowakowski-Szkudlarek, M. Hajdel, M. Zak, A. Feduniewicz-Zmuda, P. Wolny, M. Mikosza, M. Sawicka, Czeslaw Skierbiszewski. 75-76 [doi]
• III-Nitride High-Speed OptoelectronicsDaniel Feezell, Arman Rashidi, Morteza Monavarian, Andrew Aragon, Mohsen Nami, Saadat Mishkat-Ul-Masabih, Ashwin Rishinaramangalam. 77-78 [doi]
• Linear Weight Update in MoS2/Graphene Memristive Synapses for Unsupervised LearningAdithi Krishnaprasad, Sonali Das, Nitin Choudhary, Durjoy Dev, Hee-Suk Chung, Olaleye Aina, Yeonwoong Jung, Tania Roy. 79-80 [doi]
• Spin-valley coupled caloritronics with strained honeycomb latticesParijat Sengupta, Shaloo Rakheja. 81-82 [doi]
• Engineering p-n junctions in grapbene/molybdenum disulfide heterostructuresShruti Subramania, Ke Xu, Simon K. Moser, Donna Deng, Jun Li, Randall M. Feenstra, Susan K. Fullerton-Shirey, Joshua A. Robinson. 83-84 [doi]
• Cryogenic Characterization of Antiferroelectric Zirconia down to 50 mKZheng Wang, Hanbin Ying, Nujhat Tasneem, Anthony Gaskell, John D. Cressler, Martin Mourigal, Asif I. Khan. 85-86 [doi]
• Electrical Annealing and Stochastic Resonance in Low Barrier Perpendicular Nanomagnets for Oscillatory Neural NetworksPunyashloka Debashis, Pramey Upadhyaya, Zhihong Chen. 87-88 [doi]
• Resistive Switching Early Failure and Gap Identification in Bilayer Selectorless RRAM ApplicationsYing-Chen Chen, Szu-Tung Hu, Chao-Cheng Lin, Jack C. Lee. 89-90 [doi]
• Investigation of Reverse Filament Formation in ITO/HfO2-based RRAMKarl-Magnus Persson, Mamidala Saketh Ram, Mattias Borg, Lars-Erik Wernersson. 91-92 [doi]
• Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric StackMengwei Si, Xiao Lyu, Peide D. Ye. 93-95 [doi]
• Role of transverse effective mass in Auger generation impacted planar III-V Tunnel FETsSheikh Z. Ahmed, Yaohua Tan, Avik W. Ghosh. 95-96 [doi]
• Dynamic modeling of hysteresis-free negative capacitance in ferroelectric/dielectric stacks under fast pulsed voltage operationM. Hoffmann, Stefan Slesazeck, Thomas Mikolajick. 97-98 [doi]
• Multi-contact Phase Change Toggle Logic Device Utilizing Thermal CrosstalkRaihan Sayeed Khan, Nadim H. Kan'an, Jake Scoggin, Helena Silva, Ali Gokirmak. 99-100 [doi]
• A Single-Device Embodiment of XNOR Logic: TransiXNORXiang Li, Mingda Li, Alyosha Molnar, Debdeep Jena, Huili Grace Xing. 101-102 [doi]
• Neural Network Assisted Compact Model for Accurate Characterization of Cycle-to-cycle Variations in 2-D $h$-BN based RRAM devicesJacob N. Rohan, Pingping Zhuang, S. S. Teja Nibhanupudi, Sanjay K. Banerjee, Jaydeep P. Kulkarni. 103-104 [doi]
• First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar TransistorsJonathan P. Sculley, Yihao Fang, Brian Markman, Miguel E. Urteaga, Andy D. Carter, Mark J. W. Rodwell, Paul D. Yoder. 105-106 [doi]
• Impact Ionization Model for S-NDR based Threshold Switching DevicesYuezhang Zou, Darshil K. Gala, James A. Bain. 107-108 [doi]
• Non-volatile Capacitance Tuning in Graphene/(Hf, Zr)O2/Metal VaractorsV. R. Saran Kumar Chaganti, Yao Zhang, Steven J. Koester. 109-110 [doi]
• A Tunable Surface Acoustic Wave Device on Zinc Oxide via acoustoelectric interaction with AIGaN/GaN 2DEGJosé A. Bahamonde, Harish Krishnaswamy, Ioannis Kymissis. 111-112 [doi]
• Tunnel FETs using Phosphorene/ReS2 heterostructuresYashwanth Balaji, Quentin Smets, Dennis Lin, I. Asselberghs, Iuliana Radu, Guido Groeseneken. 113-114 [doi]
• Cryogenic Response of HKMG MOSFETs for Quantum Computing SystemsWriddhi Chakraborty, Kai Ni 0004, Sourav Dutta, Benjamin Grisafe, Jeffrey Smith, Suman Datta. 115-116 [doi]
• Comparative Evaluation of vdW Materials Based PN Junction and FET for Gas SensingSushovan Dhara, Kartikey Thakar, Savantan Ghosh, Abin Varghese, Suddhasatta Mahapatra, Saurabh Lodha. 117-118 [doi]
• New Device Physics of Cross-Gap Electroluminescence in Unipolar-Doped InGaAs/AlAs RTDsP. Fakhimi, W. D. Zhang, T. A. Growden, E. R. Brown, R. Droopad, K. M. Hansen, P. R. Berger. 119-120 [doi]
• Atomically Thin p-doping Layer and Record High Hole Current on WSe2Terry Y. T. Hung, Chin-Sheng Pang, Xiangkai Liu, Dmitry Zemlyanov, Zhihong Chen. 121-122 [doi]
• Photoacoustic Detection of Ammonia and Hydrogen Using Plasmonic Absorption in Pt Functionalized GaN MicrocantileversDigangana Khan, Durga Gajula, Hongmei Li, Ferhat Bayram, Goutam Koley. 123-124 [doi]
• Large Temperature Coefficient of Resistance in Atomically Thin 2D DevicesAsir Intisar Khan, Kevin Brenner, Kirby K. H. Smithe, Michal J. Mleczko, Eric Pop. 125-126 [doi]
• First-principles Study of the Electron and Hole Mobility in SilicaneMohammad Mahdi Khatami, Gautam Gaddemane, Maarten L. Van De Put, Massimo V. Fischetti, Mohammad Kazem Moravvej-Farshi, Mahdi Pourfath, William G. Vandenberghe. 127-128 [doi]
• Tunnel Barrier Thickness, Interlayer Rotational Alignment, and Top Gating Effects on ReS2/hBN/ReS2 Resonant Interlayer Tunnel Field Effect TransistorsOmar B. Mohammed, Leonard Franklin Register, Sanjay K. Banerjee. 129-130 [doi]
• Depleted Graphene-Oxide-Semiconductor Junctions for High Energy Radiation DetectionIsaac Ruiz, Thomas E. Beechem, Gyorgy Vizkelethy, Paul M. Thelen, Joshua Shank, Stephen W. Howell, Michael D. Goldflam. 131-132 [doi]
• Field Effect and Raman Characterization of Self-Assembled Mos2 NanoscrollsSimran Shahi, MaoMao Liu, Hemendra Nath Jaiswal, Licheng Xiao, Sichen Wei, Hyun Kim, Seok Joon Yun, Young Hee Lee, Fei Yao, Huamin Li. 133-134 [doi]
• About the interplay between contact and channel resistance in MoS2 and its impact on mobility extractionRuiping Zhou, Jörg Appenzeller. 135-136 [doi]
• Full In-Place Printing of Flexible Electrolyte-Gated CNT-TFTsJorge A. Cardenas, Shiheng Lu, Nicholas X. Wiliiams, Aaron D. Franklin. 137-138 [doi]
• High-performance ultrathin body TiO2 TFTs with record on/off current ratio and subthreshold swinzJie Zhang, Guangyang Lin, Peng Cui, Yuping Zeng. 139-140 [doi]
• Analyzing and Increasing Yield of ZnO Thin-Film Transistors for Large-area Sensing Systems by Preventing Process-Induced Gate Dielectric BreakdownZhiwu Zheng, Levent E. Aygun, Yoni Mehlman, Sigurd Wagner, Naveen Verma, James C. Sturm. 141-142 [doi]
• Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin WidthJaeyi Chun, Srabanti Chowdhury. 143-144 [doi]
• Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodesT. A. Growden, D. F. Storm, E. M. Cornuelle, L. M. Whitaker, B. P. Downey, W. D. Zhang, J. W. Daulton, R. Molnar, E. R. Brown, P. R. Berger, D. J. Meyer. 145-146 [doi]
• Characteristics of P-channel GaN MOSFET up to 300 °CSang Woo Han, Jianan Song, Rongming Chu. 147-148 [doi]
• Reduction of Saturation Voltage in InGaAs-Channel/lnGaN-Drain Vertical FETs and the role of traps at the InGaAs/lnGaN junctionShalini Lal, Jing Lu, Brian J. Thibeault, Man Hoi Wong, Chris G. Van de Walle, Steven P. DenBaars, Umesh K. Mishra. 149-150 [doi]
• Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown $\beta$-Ga2O3Shivam Sharma, Ke Zeng, Abhishek Vaidya, Uttam Singisetti. 151-152 [doi]
• Surface states in AlGaN/GaN high electron mobility transistors: Energy profiling using channel photocurrent spectroscopyYury Turkulets, Ilan Shalish. 153-154 [doi]
• Diamond Metal-Semiconductor Field Effect Transistor for High Temperature ApplicationsYuelin Wu, Cristian Herrera, Aaron Hardy, Matthias Muehle, Tom Zimmermann, Timothy A. Grotjohn. 155-156 [doi]
• RF Performance of 130 nm Al0.75Ga0.25N/Al0.6Ga0.4N HFETs with MBE-Regrown ContactsHao Xue, Choong-Hee Lee, Kamal Hussian, Towhidur Razzak, Mamun Abdullah, Zhanbo Xia, Shahadat Hasan Sohel, Asif Khan, Siddharth Rajan, Wu Lu. 157-158 [doi]
• Barrier Height Stability and Reverse Leakage Mechanisms in Ni/Ga2O3 (001) Schottky Barrier DiodesWenshen Li, Kazuki Nornoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing. 159-160 [doi]
• Vertical GaN Superjunction FinFET: A Novel Device Enabling Multi-Kilovolt and Megahertz Power SwitchingMing Xiao, Ruizhe Zhang, Garrett Schlenvogt, Thomas Jokinen, Han Wang, Yuhao Zhang. 161-162 [doi]
• Tunable WSe2 phototransistor enabled by electrostatically doped lateral p-n homojunctionSayantan Ghosh, Sushovan Dhara, Abin Varghese, Kartikey Thakar, Saurabh Lodha. 163-164 [doi]
• Defect characterization of InAs/InGaAs quantum dot photodetector grown on GaAs-on-V-grooved-Si substrateJian Huang, Yating Wan, Daehwan Jung, Justin Norman, Chen Shang, Qiang Li, Kei May Lau, Arthur C. Gossard, John E. Bowers 0001, Baile Chen. 165-166 [doi]
• Waveguide Uni-Traveling-Carrier Photodiodes for mmW Signal Generation: Space-Charge Impedance and Efficiency LimitationsBrandon Isaac, Yuan Liu, Sergio Pinna, Larry Coldren, Jonathan Klamkin. 167-168 [doi]
• Flexible organic light-emitting diodes with efficiency improvement by dielectric-metal-dielectric anodeChangyeong Jeong, Yongbum Park, L. Jay Guo. 169-170 [doi]
• Efficient InGaN p-Contacts for deep-UV Light Emitting DiodesKevin Lee, Shyam Bharadwaj, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena. 171-172 [doi]
• Ultrathin Metal Film Transparent Conductor for Efficient Light Coupling in Organic Light Emitting DiodeYong-Bum Park, Changyeong Jeong, L. Jay Guo. 173-174 [doi]
• High-Responsivity Flexible Photodetectors based on MOVPE-MoS2Daniel S. Schneider, Annika Grundmann, Andreas Bablich, Vikram Passi, Satender Kataria, Holger Kalisch, Michael Heuken, Andrei Vescan, Daniel Neumaier, Max C. Lemme. 175-176 [doi]
• Photo-amplification in Bipolar $\mathbf{WSe}_{2}$ Transistors with Electrostatic GatingKartikey Thakar, Saurabh Lodha. 177-178 [doi]
• $W_{e}=100\mathrm{nm}$ InP/lnGaAs DHBT with Self-aligned MOCVD Regrown p-GaAs Extrinsic Base Exhibiting $1\Omega-\mu\mathrm{m}^{2}$ Base Contact ResistivityYihao Fang, Hsin-Ying Tseng, Mark J. W. Rodwell. 179-180 [doi]
• Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface PolarizationShun'ichiro Ohmi, Yizhe Ding, Sohya Kudoh. 181-182 [doi]
• InP MOSFETs Exhibiting Record 70 mV/dec Subthreshold SwingHsin-Ying Tseng, Yihao Fang, Shibo Zhong, Mark J. W. Rodwell. 183-184 [doi]
• True Random Number Generator using Superconducting QubitsAbdullah Ash-Saki, Mahabubul Alam, Swaroop Ghosh. 185-186 [doi]
• Solving the Maximum Independent Set Problem using Coupled Relaxation OscillatorsMohammad Khairul Bashar, Richard Hrdy, Antik Mallick, Farzad Farnoud Hassanzadeh, Nikhil Shukla. 187-188 [doi]
• Ultra-high responsivity and photovoltaic effect based on vertical transport in multi-layer $\alpha$ -In2Se3Roop K. Mech, Neha Mohta, Rangarajan Muralidharan, Digbijov N. Nath. 189-190 [doi]
• Ferroelectric Tunneling Junctions for Neurosynaptic ComputingHojoon Ryu, Haonan Wu, Fubo Rao, Wenjuan Zhu. 191-192 [doi]
• Artificial Neuron using Ag/2D-MoS2/Au Threshold Switching MemristorDurjoy Dev, Adithi Krishnaprasad, Zhezhi He, Sonali Das, Mashiyat Sumaiya Shawkat, Madison Manley, Olaleye Aina, Deliang Fan, Yeonwoong Jung, Tania Roy. 193-194 [doi]
• Fundamental Limit on Network Size Scaling of Oscillatory Neural Networks due to PrMnO3 based Oscillator Phase NoiseVivek Saraswat, Sandip Lashkare, Pankaj Kumbhare, Udayan Ganguly. 195-196 [doi]
• Phase-change memory enables energy-efficient brain-inspired computingManuel Le Gallo, Abu Sebastian, Evangelos Eleftheriou. 197-198 [doi]
• Demonstration of FETs with 3D Dirac Semimetal, Cd3As2Omor Shoron, Timo Schumann, Manik Goyal, David Kealhofer, Susanne Stemmer. 201-202 [doi]
• A Novel ESD Clamp Based on the VO2 Insulator-Metal TransitionStephanie M. Bohaichuk, Mario M. Pelella, Yifei Sun, Zhen Zhang, Shriram Ramanathan, Eric Pop. 203-204 [doi]
• Top-gated atomic precision phosphorous doped silicon single electron transistor with low thermal budget gate dielectricE. M. Anderson, L. Maurer, L. Tracy, S. W. Smith, P. Lu, A. M. Katzenmeyer, A. D. Baczewski, D. M. Campbell, M. T. Marshall, D. R. Ward, T.-M. Lu, S. Misra. 205-206 [doi]
• Variants of Ferroelectric Hafnium Oxide based Nonvolatile MemoriesThomas Mikolajick, Halid Mulaosmanovic, M. Hoffmann, Benjamin Max, T. Mittmann, Uwe Schroeder, Stefan Slesazeck. 207-208 [doi]
• 2Wenshen Li, Kazuki Nomoto, Zongyang Hu, Debdeep Jena, Huili Grace Xing. 209-210 [doi]
• Sheet-rich Silk-base RRAM with Low Switching Voltages and Improved ReliabilitiesMohammad T. Sharbati, Se Youn Cho, Golnaz Najaf Tomaraei, Qingzhou Wan, Joshua Schlea, Mostafa Bedewy, Feng Xiong. 209-210 [doi]
• WSe2 based Valley-Coupled-Spintronic Devices for Low Power Non-Volatile MemoriesSandeep Krishna Thirumala, T. Hung, Arnab Raha, Niharika Thakuria, K. Cho, Vijay Raghunathan, Zhihong Chen, S. Gupta. 211-212 [doi]
• Dynamic $(\mathrm{Bi}_{\mathrm{x}}\mathrm{Sb}_{1-\mathrm{x}})_{2}\mathrm{Te}_{\mathrm{3}}$ Synaptic Devices with Programmable Spatio-Temporal ResponsesQingzhou Wan, Peng Zhang, Qiming Shao, Mohammad T. Sharbati, John R. Erickson, Kang L. Wang, Feng Xiong. 213-214 [doi]
• In-memory solution of linear systems with crosspoint arrays without iterationsZ. Sun, Giacomo Pedretti, Elia Ambrosi, Alessandro Bricalli, W. Wang, Daniele Ielmini. 215-216 [doi]
• Self-Aligned Gate Thin-Channel β-Ga2O3MOSFETsKyle J. Liddy, Nolan S. Hendricks, Andrew J. Green, Andreas Popp, Miles T. Lindquist, Kevin D. Leedy, Stephen E. Tetlak, Neil A. Moser, Günter Wagner, Kelson D. Chabak, Gregg H. Jessen. 219-220 [doi]
• Polarization Recovery Behavior of Hf0.5Zr0.5O2 on Gallium Nitride HEMT HeterostructuresChunlei Wu, Nikhita Shaju, Hansheng Ye, Benjamin Grisafe, Suman Datta, Patrick Fay. 221-222 [doi]
• Epitaxial passivation of delta doped $\beta$ -Ga2O3 field effect transistorsChandan Joishi, Zhanbo Xia, Shahadat H. Sohel, Saurabh Lodha, Siddharth Rajan. 223-224 [doi]
• Enhancement-Mode Current Aperture Vertical Ga2O3 MOSFETsMan Hoi Wong, Hisashi Murakami, Yoshinao Kumagai, Masataka Higashiwaki. 225-226 [doi]
• New Observations in Contact Scaling for 2D FETsZhihui Cheng, Hattan Abuzaid, Yifei Yu, Shreya Singh, Linyou Cao, Aaron D. Franklin. 227-228 [doi]
• Flexible Top-Gated Monolayer MoS2 Transistors with High MobilityAlwin Daus, Sam Vaziri, Kevin Brenner, Ryan W. Grady, Alvin U. Tang, Eric Pop. 229-230 [doi]
• Atomic Layer Etching (ALE) of WSe2 Yielding High Mobility p-FETsAnkur Nipane, Punnu Jose Sebastian, Younghun Jung, Min Sup Choi, Abhinandan Borah, Won Jong Yoo, James Hone, James T. Teherani. 231-232 [doi]
• Efficient Optoelectronics with 2D MaterialsMax C. Lemme. 233-234 [doi]
• Process Technologies for GaN High Voltage DevicesTetsu Kachi, Tetsuo Narita, Hideki Sakurai, Jun Suda. 235-236 [doi]
• Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETsAditi Agarwal, Kijeong Han, B. Jayant Baliga. 237-238 [doi]
• Metal/BaTiO3/β-Ga2O3 Dielectric Heterojunction Diode with 5.6 MV/cm Breakdown FieldZhanbo Xia, Caivu Wang, Hareesh Chandrasekar, Wyatt Moore, Aidan Lee, Nidhin Kurian Kalarickal, Fengyuan Yang, Siddharth Rajan. 239-240 [doi]
• Buried tunnel junction for p-down nitride laser diodesHenryk Turski, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Shyam Bharadwaj, Mikolaj Chlipala, Krzesimir Nowakowski-Szkudlarek, Mateusz Hajdel, Huili Grace Xing, Debdeep Jena, Czeslaw Skierbiszewski. 241-242 [doi]
• Significance of Multi and Few Domain Ferroelectric Switching Dynamics for Steep-Slope Non-Hysteretic Ferroelectric Field Effect TransistorJ. Gomez, Sourav Dutta, K. Ni, Benjamin Grisafe, J. Smith, A. Khan, S. Datta. 247-248 [doi]
• 3D-stacked Strained SiGe/Ge Gate-All-Around (GAA) Structure Fabricated by 3D Ge CondensationJunkyo Suh, Andrew C. Meng, Marc Jaikissoon, Michael Braun, Taeho R. Kim, Ann F. Marshall, Anahita Pakzad, Paul C. McIntyre, Krishna C. Saraswat. 249-250 [doi]
• High Performance and Yield for Super Steep Retrograde Wells (SSRW) by Well Implant / Si-based Epitaxy on Advanced Technology FinFETsU. Rana, D. P. Brunco, S. Raman, Dina H. Triyoso, M. W. Stoker, J. B. Johnson, Luigi Pantisano, K. D. Seo, M. Zhao, A. Reznicek, R. Krishnan, B. Moser, J. Freeman, L. Jang, E. Kaganer. 251-252 [doi]
• Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devicesJ. Bizindavyi, A. S. Verhulst, Quentin Smets, Bart Sorée, Guido Groeseneken. 253-254 [doi]