Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes

T. A. Growden, D. F. Storm, E. M. Cornuelle, L. M. Whitaker, B. P. Downey, W. D. Zhang, J. W. Daulton, R. Molnar, E. R. Brown, P. R. Berger, D. J. Meyer. Pulsed characteristics for high current, large area GaN/Ain resonant tunneling diodes. In Device Research Conference, DRC 2019, Ann Arbor, MI, USA, June 23-26, 2019. pages 145-146, IEEE, 2019. [doi]

Abstract

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