Massimo V. Fischetti - researchr alias

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Viewing Publication 1 - 10 from 10

2019

First-principles Study of the Electron and Hole Mobility in SilicaneMohammad Mahdi Khatami, Gautam Gaddemane, Maarten L. Van De Put, Massimo V. Fischetti, Mohammad Kazem Moravvej-Farshi, Mahdi Pourfath, William G. Vandenberghe. drc 2019: 127-128 [doi]

Scalable atomistic simulations of quantum electron transport using empirical pseudopotentialsMaarten L. Van De Put, Massimo V. Fischetti, William G. Vandenberghe. cphysics, 244:156-169, 2019. [doi]

2018

Modeling of electron transport in nanoribbon devices using Bloch wavesAkash A. Laturia, Maarten L. Van De Put, Massimo V. Fischetti, William G. Vandenberghe. drc 2018: 1-2 [doi]

2012

Thickness and temperature dependence of the leakage current in hafnium-based Si SOI MOSFETsJiseok Kim, Siddarth A. Krishnan, Sudarshan Narayanan, Michael P. Chudzik, Massimo V. Fischetti. mr, 52(12):2907-2913, 2012. [doi]

2006

Silicon CMOS devices beyond scalingWilfried Haensch, Edward J. Nowak, Robert H. Dennard, Paul M. Solomon, Andres Bryant, Omer H. Dokumaci, Arvind Kumar, Xinlin Wang, Jeffrey B. Johnson, Massimo V. Fischetti. ibmrd, 50(4-5):339-362, 2006. [doi]

Examining Performance Enhancement of p-Channel Strained-SiGe MOSFET DevicesDragica Vasileska, Santhosh Krishnan, Massimo V. Fischetti. nma 2007: 189-196 [doi]

2005

Hole transport in p-channel Si MOSFETsSanthosh Krishnan, Dragica Vasileska, Massimo V. Fischetti. mj, 36(3-6):323-326, 2005. [doi]

2001

Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologiesJ. C. Tsang, Massimo V. Fischetti. mr, 41(9-10):1465-1470, 2001.

1998

+ silicon diodeO. Muscato, Rosa M. Pidatella, Massimo V. Fischetti. vlsi, 1998(1):247-250, 1998. [doi]

1992

Numerical modeling of advanced semiconductor devicesWai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh. ibmrd, 36(2):208-232, 1992.

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