Giorgio Baccarani - researchr alias

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Viewing Publication 1 - 38 from 38

2018

2015

Theoretical analyses and modeling for nanoelectronicsGiorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani. esscirc 2015: 4-9 [doi]

Theoretical analyses and modeling for nanoelectronicsGiorgio Baccarani, Emanuele Baravelli, Elena Gnani, Antonio Gnudi, Susanna Reggiani. essderc 2015: 4-9 [doi]

2014

TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regimeI. Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, L. Nguyen, M. Denison. essderc 2014: 325-328 [doi]

Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz OperationValerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani. essderc 2014: 313-316 [doi]

TCAD analysis of HCS degradation in LDMOS devices under AC stress conditionsF. Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, M.-Y. Chuang, W. Tian, D. Varghese, R. Wise. essderc 2014: 333-336 [doi]

A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETsF. Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. essderc 2014: 262-265 [doi]

2013

Complementary n- and p-type TFETs on the same InAs/Al0.05Ga0.95Sb platformEmanuele Baravelli, Elena Gnani, Roberto Grassi, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. essderc 2013: 69-72 [doi]

Boosting InAs TFET on-current above 1 mA/μm with no leakage penaltyGiovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. essderc 2013: 73-76 [doi]

Deterministic solution of the 1D Boltzmann transport equation: Application to the study of current transport in nanowire FETsElena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. mj, 44(1):20-25, 2013. [doi]

DC and small-signal numerical simulation of graphene base transistor for terahertz operationValerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani. essderc 2013: 314-317 [doi]

Gate stack optimization to minimize power consumption in super-lattice fetsP. Maiorano, Elena Gnani, Antonio Gnudi, Susanna Reggian, Giorgio Baccarani. essderc 2013: 81-84 [doi]

Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited)Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, R. Wise, M.-Y. Chuang, W. Tian, M. Denison. essderc 2013: 91-94 [doi]

2012

Drain-conductance optimization in nanowire TFETsElena Gnani, Susanna Reggiani, Antonio Gnudi, Giorgio Baccarani. essderc 2012: 105-108 [doi]

2003

A Single-Scan Algorithm for Connected Components Labelling in a Traffic Monitoring ApplicationAlessandro Bevilacqua, Alessandro Lanza, Giorgio Baccarani, Riccardo Rovatti. scia 2003: 677-684 [doi]

2000

An Analytical, Temperature-dependent Model for Majority- and Minority-carrier Mobility in Silicon DevicesSusanna Reggiani, Marina Valdinoci, Luigi Colalongo, Massimo Rudan, Giorgio Baccarani. vlsi, 2000(4):467-483, 2000. [doi]

1998

Recent Advances in Device Simulation Using Standard Transport ModelsGiorgio Baccarani, Massimo Rudan, M. Lorenzini, C. Sala. vlsi, 1998(1):223-237, 1998. [doi]

Analog synthesis of nonlinear functions based on fuzzy logicEleonora Franchi, Nicolò Manaresi, Riccardo Rovatti, Alberto Bellini, Giorgio Baccarani. jssc, 33(6):885-895, 1998. [doi]

1996

Device simulation for smart integrated systems (DESSIS)Giorgio Baccarani, Massimo Rudan, M. Lorenzini, W. Fichtner, J. Litsios, A. Schenk, P. Van Staa, L. Kaeser, A. Kampmann, A. Marmiroli, C. Sala, E. Ravanelli. icecsys 1996: 752-755 [doi]

An ASIC chip set for parallel fuzzy database miningAlberto Ferrari, Antonella Bellettini, Roberto Guerrieri, Giorgio Baccarani. micro, 16(6):60-67, 1996. [doi]

Highly constrained neural networks for industrial quality controlNicola Guglielmi, Roberto Guerrieri, Giorgio Baccarani. tnn, 7(1):206-213, 1996. [doi]

A silicon compiler of analog fuzzy controllers: from behavioral specifications to layoutNicolò Manaresi, Riccardo Rovatti, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani. tfs, 4(4):418-428, 1996. [doi]

Automatic synthesis of analog fuzzy controllers: a hardware and software approachNicolò Manaresi, Riccardo Rovatti, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani. tie, 43(1):217-225, 1996. [doi]

A photodiode cell for applications to position and motion estimation sensorsMarco Tartagni, Eleonora Franchi, Roberto Guerrieri, Giorgio Baccarani. tie, 43(1):200-206, 1996. [doi]

1995

An enhanced two-level Boolean synthesis methodology for fuzzy rules minimizationRiccardo Rovatti, Roberto Guerrieri, Giorgio Baccarani. tfs, 3(3):288-299, 1995. [doi]

On the Structure and Closure-Condition of the Hydrodynamic ModelMassimo Rudan, Giorgio Baccarani. vlsi, 3(2):115-129, 1995. [doi]

A 2D-DCT low-power architecture for H.261 codersE. Scopa, Alberto Leone, Roberto Guerrieri, Giorgio Baccarani. icassp 1995: 3271-3274 [doi]

1994

Hydrodynamic simulation of semiconductor devices operating at low temperatureAlberto Leone, Antonio Gnudi, Giorgio Baccarani. tcad, 13(11):1400-1408, 1994. [doi]

1993

An array-processor based architecture for classification problemsAntonella Bellettini, Alberto Ferrari, Roberto Guerrieri, Giorgio Baccarani. asap 1993: 148-151 [doi]

Modeling impact ionization in a BJT by means of spherical harmonics expansion of the Boltzmann transport equationAntonio Gnudi, Davide Ventura, Giorgio Baccarani. tcad, 12(11):1706-1713, 1993. [doi]

1992

A novel metric for nearest-neighbor classification of hand-written digitsZsolt Miklós Kovács-Vajna, Roberto Guerrieri, Giorgio Baccarani. icpr 1992: 96-100 [doi]

Numerical modeling of advanced semiconductor devicesWai Lee, Steven E. Laux, Massimo V. Fischetti, Giorgio Baccarani, Antonio Gnudi, Johannes M. C. (Hans) Stork, Jack A. Mandelman, Emmanuel F. Crabbé, Matthew R. Wordeman, Farouk Odeh. ibmrd, 36(2):208-232, 1992.

1991

Efficient 3-D simulation of complex structuresPaolo Ciampolini, Anna Pierantoni, Giorgio Baccarani. tcad, 10(9):1141-1149, 1991. [doi]

1990

Three-dimensional simulation of VLSI structuresPaolo Ciampolini, Anna Pierantoni, Massimo Rudan, Giorgio Baccarani. ett, 1(3):301-306, 1990. [doi]

1989

Adaptive mesh generation preserving the quality of the initial gridPaolo Ciampolini, Alessandro Forghieri, Anna Pierantoni, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani. tcad, 8(5):490-500, 1989. [doi]

1988

A new discretization strategy of the semiconductor equations comprising momentum and energy balanceAlessandro Forghieri, Roberto Guerrieri, Paolo Ciampolini, Antonio Gnudi, Massimo Rudan, Giorgio Baccarani. tcad, 7(2):231-242, 1988. [doi]

1987

Sensitivity Analysis for Device DesignAntonio Gnudi, Paolo Ciampolini, Roberto Guerrieri, Massimo Rudan, Giorgio Baccarani. tcad, 6(5):879-885, 1987. [doi]

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2018

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1998

1996

1995

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1992

1991

1990

1989

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1987

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