Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited)

Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, R. Wise, M.-Y. Chuang, W. Tian, M. Denison. Modeling and characterization of hot-carrier stress degradation in power MOSFETs (invited). In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 91-94, IEEE, 2013. [doi]

Abstract

Abstract is missing.