Table of Contents

• A semiconductor memory development and manufacturing perspectiveGreg Atwood, Scott DeBoer, Kirk Prall, Linda Somerville. 1-6 [doi]
• Slowing of Moore's law signals the beginning of smart everythingSehat Sutardja. 7-8 [doi]
• How chips helped discover the Higgs boson at CERNW. Snoeys. 9-19 [doi]
• Automotive electronics: Application & technology megatrendsFabio Marchio, Boris Vittorelli, Roberto Colombo. 23-29 [doi]
• Terahertz electronics: The last frontierThomas H. Lee. 30-34 [doi]
• Energy efficiency and conversion in 1D and 2D electronicsEric Pop, Chris English, Feng Xiong, Feifei Lian, Andrey Serov, Zuanyi Li, Sharnali Islam, Vincent Dorgan. 35-37 [doi]
• Bionic skins using flexible organic devicesTakao Someya. 38-41 [doi]
• Data regeneration and disturb immunity of T-RAM cellsH. Mulaosmanovic, C. Monzio Compagnoni, N. Castellani, G. Carnevale, D. Ventrice, P. Fantini, A. S. Spinelli, A. L. Lacaita, A. Benvenuti. 46-49 [doi]
• Investigation on multiple activation energy of retention in charge trapping memory using self-consistent simulationSangyong Park, Seongwook Choi, Kwang Sun Jun, Huijung Kim, SungMan Rhee, Young-June Park. 50-53 [doi]
• Cycling-induced threshold-voltage instabilities in nanoscale NAND flash memories: Sensitivity to the array background patternG. M. Paolucci, M. Bertuccio, C. Monzio Compagnoni, S. Beltrami, A. S. Spinelli, A. L. Lacaita, A. Visconti. 54-57 [doi]
• Analysis of failure mechanisms in erased state of sub 20-nm NAND Flash memoryKyunghwan Lee, Duckseoung Kang, Hyungcheol Shin, Sangjin Kwon, Shinhyung Kim, Yuchul Hwang. 58-61 [doi]
• Operation of Lorentz-force MEMS magnetometers with on-off current switchingGiacomo Langfelder, Cesare Buffa, Paolo Minotti, Antonio Longoni, Alessandro Tocchio, Sarah Zerbini. 62-65 [doi]
• A 6.7 MHz nanoelectromechanical ring oscillator using curved cantilever switches coated with amorphous carbonChristopher Lawrence Ayala, Daniel Grogg, Antonios Bazigos, Montserrat Fernandez-Bolaños Badia, Urs Dürig, Michel Despont, Christoph Hagleitner. 66-69 [doi]
• Reliability of capacitive RF MEMS switches subjected to repetitive impact cycles at different temperaturesMarco Barbato, Andrea Cester, V. Mulloni, B. Margesin, G. De Pasquale, Aurelio Somà, Gaudenzio Meneghesso. 70-73 [doi]
• Current dependence of the piezoresistive coefficients of CMOS FETs on (100) siliconSafina Hussain, Richard C. Jaeger, Jeffrey C. Suhling. 74-77 [doi]
• Bimetallic nanoparticles for optimizing CMOS integrated SnO2 gas sensor devicesGiorgio C. Mutinati, Elise Brunet, Olena Yurchenko, Elmar Laubender, Gerald Urban, Anton Köck, Stephan Steinhauer, Joerg Siegert, Karl Rohracher, Franz Schrank, Martin Schrems. 78-81 [doi]
• Low dark count rate and low timing jitter InGaAs/InP Single-Photon Avalanche DiodeAlberto Tosi, Mirko Sanzaro, Niccolo Calandri, Alessandro Ruggeri, Fabio Acerbi. 82-85 [doi]
• Flexible thermoelectric generator based on transfer printed Si microwiresSaleem Khan, Ravinder S. Dahiya, Leandro Lorenzelli. 86-89 [doi]
• Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETsA. Erika Pondigo de los, Edmundo A. Gutierrez-D, J. Molina-R, Fernando Guarin. 90-93 [doi]
• Impact of Random Telegraph Signals on 6T high-density SRAM in 28nm UTBB FD-SOIKaya Can Akyel, Lorenzo Ciampolini, Olivier Thomas, David Turgis, Gérard Ghibaudo. 94-97 [doi]
• Joint impact of random variations and RTN on dynamic writeability in 28nm bulk and FDSOI SRAMBrian Zimmer, Olivier Thomas, Seng Oon Toh, Taylor Vincent, Krste Asanovic, Borivoje Nikolic. 98-101 [doi]
• Circuit and process co-design with vertical gate-all-around nanowire FET technology to extend CMOS scaling for 5nm and beyond technologiesT. Huynh Bao, Dmitry Yakimets, Julien Ryckaert, Ivan Ciofi, R. Baert, A. Veloso, J. Bommels, Nadine Collaert, Philippe Roussel, S. Demuynck, Praveen Raghavan, Abdelkarim Mercha, Zsolt Tokei, Diederik Verkest, Aaron Thean, Piet Wambacq. 102-105 [doi]
• Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETsFrançois Andrieu, Mikaël Casse, E. Baylac, P. Perreau, O. Nier, D. Rideau, R. Berthelon, F. Pourchon, A. Pofelski, B. De Salvo, C. Gallon, Vincent Mazzocchi, D. Barge, C. Gaumer, O. Gourhant, A. Cros, V. Barral, R. Ranica, N. Planes, W. Schwarzenbach, E. Richard, E. Josse, O. Weber, F. Arnaud, Maud Vinet, Olivier Faynot, M. Haond. 106-109 [doi]
• FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integrationClaire Fenouillet-Beranger, Bernard Previtali, Perrine Batude, F. Nemouchi, Mikaël Casse, X. Garros, L. Tosti, N. Rambal, Dominique Lafond, H. Dansas, L. Pasini, L. Brunet, F. Deprat, M. Gregoire, M. Mellier, Maud Vinet. 110-113 [doi]
• InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 Band k · p theoryA. T. Pham, S. Jin, W. Choi, M. J. Lee, S. H. Cho, Y.-T. Kim, K. H. Lee, Y. Park. 114-117 [doi]
• Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulkHamilton Carrillo-Nunez, Mathieu Luisier, Andreas Schenk. 118-119 [doi]
• Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strainPengying Chang, Lang Zeng, Xiaoyan Liu, Gang Du. 122-125 [doi]
• Efficient numerics for thermally-assisted trap-limited conduction in chalcogenidesEnrico Piccinini, Massimo Rudan, Fabrizio Buscemi, Rossella Brunetti. 126-129 [doi]
• 3-D electrothermal device/circuit simulation of DC-DC converter module in multi-die ICAles Chvála, Daniel Donoval, Lukas Nagy, Juraj Marek, Patrik Pribytny, Marian Molnar. 130-133 [doi]
• Dual Ground Plane EDMOS in ultrathin FDSOI for 5V energy management applicationsAntoine Litty, Sylvie Ortolland, Dominique Golanski, Sorin Cristoloveanu. 134-137 [doi]
• Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environmentShiqian Shao, Wei-Cheng Lien, Ayden Maralani, Albert P. Pisano. 138-141 [doi]
• Novel AlInN/GaN integrated circuits operating up to 500 °CRemis Gaska, M. Gaevski, J. Deng, R. Jain, G. Simin, Michael S. Shur. 142-145 [doi]
• High performance high reliability AlN/GaN DHFETF. Medjdoub, E. Okada, B. Grimbert, D. Ducatteau, R. Silvestri, Matteo Meneghini, Enrico Zanoni, Gaudenzio Meneghesso. 146-149 [doi]
• A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETsMatthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt. 150-153 [doi]
• The Factory Integration Roadmap in Semiconductor manufacturingJames Moyne, Martin Schellenberger, Lothar Pfitzner. 154-156 [doi]
• 1Markus Brummayer, Stefan Fuchshumer. 157-159 [doi]
• Manufacturing of 3D integrated sensors and circuitsMartin Schrems, Joerg Siegert, Peter Dorfi, Jochen Kraft, Ewald Stueckler, Franz Schrank, Siegfried Selberherr. 162-165 [doi]
• A high-sensitivity 135GHz millimeter-wave imager by differential transmission-line loaded split-ring-resonator in 65nm CMOSYang Shang, Hao Yu, Chang Yang, Sanming Hu, Minkyu Je. 166-169 [doi]
• IR-optimized silicon demodulating detector with 3-dimensional electrodesLucio Pancheri, Filippo Savazzi, Gian-Franco Dalla Betta, David Stoppa, Maurizio Boscardin. 170-173 [doi]
• Blue selective photodiodes for optical feedback in LED wafer level packagesZ. Kolahdouz Esfahani, T. Ma, Henk W. van Zeijl, G. Q. Zhang, A. Rostamian, M. Kolahdouz. 174-177 [doi]
• Experimental demonstration of improved analog device performance in GAA-NW-TFETsChristian Schulte-Braucks, Simon Richter, Lars Knoll, Luca Selmi, Qing-Tai Zhao, Siegfried Mantl. 178-181 [doi]
• Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performanceYukinori Morita, T. Mori, Shinji Migita, Wataru Mizubayashi, K. Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Y. X. Liu, Meishoku Masahara, Hiroyuki Ota. 182-185 [doi]
• Two dimensional quantum mechanical simulation of low dimensional tunneling devicesCem Alper, Pierpaolo Palestri, Livio Lattanzio, Jose L. Padilla, Adrian M. Ionescu. 186-189 [doi]
• Investigation of partially gated Si tunnel FETs for low power integrated optical sensingNilay Dagtekin, Adrian M. Ionescu. 190-193 [doi]
• Innovative manufacturing of large-area electronicsLuigi Occhipinti. 194-197 [doi]
• Freeform and flexible electronics manufacturing using R2R printing and hybrid integration techniquesJukka Hast, Sami Ihme, Jukka-Tapani Makinen, Kimmo Keränen, Markus Tuomikoski, Kari Ronka, Harri Kopola. 198-201 [doi]
• Printed OTFT complementary circuits and matrix for Smart Sensing Surfaces applicationsIsabelle Chartier, Stéphanie Jacob, M. Charbonneau, A. Aliane, A. Plihon, Romain Coppard, Romain Gwoziecki, J. M. Verilhac, Christophe Serbutoviez, Olivier Dhez, Eugenio Cantatore, F. Domingues Dos Santos. 202-205 [doi]
• Flexible and stretchable electronics for wearable healthcareJeroen van den Brand, Margreet de Kok, Ashok Sridhar, Maarten Cauwe, Rik Verplancke, Frederick Bossuyt, Johan De Baets, Jan Vanfleteren. 206-209 [doi]
• Hybrid Systems in foil (HySiF) exploiting ultra-thin flexible chipsChristine Harendt, Zili Yu, Joachim N. Burghartz, Jan Kostelnik, Andreas Kugler, Stefan Saller. 210-213 [doi]
• Statistical analysis of dynamic variability in 28nm FD-SOI MOSFETsEleftherios G. Ioannidis, Sébastien Haendler, Christoforos Theodorou, Nicolas Planes, C. A. Dimitriadis, Gérard Ghibaudo. 214-217 [doi]
• Variability in device degradations: Statistical observation of NBTI for 3996 transistorsHiromitsu Awano, Masayuki Hiromoto, Takashi Sato. 218-221 [doi]
• Variability of UTBB MOSFET analog figures of merit in wide frequency rangeS. Makovejev, B. Kazemi Esfeh, Jean-Pierre Raskin, Valeria Kilchytska, Denis Flandre, V. Barral, N. Planes, M. Haond. 222-225 [doi]
• Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodesG. Besnard, X. Garros, François Andrieu, P. Nguyen, W. van den Daele, P. Reynaud, W. Schwarzenbach, D. Delprat, Konstantin Bourdelle, Gilles Reimbold, Sorin Cristoloveanu. 226-229 [doi]
• MOSFET degradation under DC and RF Fowler-Nordheim stressA. Cattaneo, S. Pinarello, J. E. Mueller, R. Weigel. 230-233 [doi]
• Set/reset statistics and kinetics in phase change memory arraysMaurizio Rizzi, Nicola Ciocchini, Daniele Ielmini, Andrea Ghetti, Paolo Fantini. 234-237 [doi]
• High Ion/Ioff ratio BJT selector for 32 cell string Resistive RAM arraysA. Redaelli, L. Laurin, S. Lavizzari, C. Cupeta, G. Servalli, A. Benvenuti. 238-241 [doi]
• Analytical modelling and leakage optimization in complementary resistive switch (CRS) crossbar arraysStefano Ambrogio, Simone Balatti, Daniele Ielmini, D. C. Gilmer. 242-245 [doi]
• Analysis of RTN and cycling variability in HfO2 RRAM devices in LRSFrancesco Maria Puglisi, P. Pavan, Luca Larcher, Andrea Padovani. 246-249 [doi]
• Parameters extraction on HfOX based RRAMPeng Huang, Bing Chen, Haitong Li, Zhe Chen, Bin Gao, Xiaoyan Liu, JinFeng Kang. 250-253 [doi]
• The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologiesF. Monsieur, Y. Denis, D. Rideau, V. Quenette, G. Gouget, Clément Tavernier, Hervé Jaouen, Gérard Ghibaudo, J. Lacord. 254-257 [doi]
• 3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETsThomas Holtij, Michael Graef, Alexander Kloes, Benjamin Iñíguez. 258-261 [doi]
• A quasi 2D semianalytical model for the potential profile in hetero and homojunction tunnel FETsF. Villani, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. 262-265 [doi]
• Compact Fermi potential model for heterostructure HEMTs with rectangular quantum wellArjun Ajaykumar, Zhou Xing, Binit Syamal, Siau Ben Chiah. 266-269 [doi]
• Compact model for parametric instability under arbitrary stress waveformFilippo Alagi, Mattia Rossetti, Roberto Stella, Emanuele Viganò, Philippe Raynaud. 270-273 [doi]
• Silicon LEDs in FinFET technologyGiulia Piccolo, P. I. Kuindersma, L.-Å. Ragnarsson, Raymond J. E. Hueting, Nadine Collaert, J. Schmitz. 274-277 [doi]
• Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configurationShinji Migita, Takashi Matsukawa, T. Mori, K. Fukuda, Yukinori Morita, Wataru Mizubayashi, K. Endo, Y. X. Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota. 278-281 [doi]
• Analysis of TFET based 6T SRAM cells implemented with state of the art silicon nanowiresSebastiano Strangio, Pierpaolo Palestri, David Esseni, Luca Selmi, Felice Crupi. 282-285 [doi]
• Impact of quantum modulation of the inversion charge in the MOSFET subthreshold regimeGaspard Hiblot, Quentin Rafhay, Frederic Boeuf, Gérard Ghibaudo. 286-289 [doi]
• A 9.8 μm sample and hold time to amplitude converter CMOS SPAD pixelLuca Parmesan, Neale A. W. Dutton, Neil J. Calder, Andrew J. Holmes, Lindsay A. Grant, Robert K. Henderson. 290-293 [doi]
• Analog SiPM in planar CMOS technologyFederica A. Villa, Danilo Bronzi, Michele Vergani, Yu Zou, Alessandro Ruggeri, Franco Zappa, Alberto Dalla Mora. 294-297 [doi]
• Effects of constant voltage stress on organic complementary logic invertersN. Wrachien, Andrea Cester, N. Lago, Gaudenzio Meneghesso, R. D'Alpaos, A. Stefani, G. Turatti, Michele Muccini. 298-301 [doi]
• Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistorsAjay Bhoolokam, Manoj Nag, Adrian Chasin, Soeren Steudel, Jan Genoe, Gerwin H. Gelinck, Guido Groeseneken, Paul Heremans. 302-304 [doi]
• Qualitative assessment of epitaxial graphene FETs on SiC substrates via pulsed measurements and temperature variationC. Mukherjee, Sébastien Fregonese, Thomas Zimmer, C. Maneux, H. Happy, D. Mele. 305-308 [doi]
• PDMS-supported graphene transfer using intermediary polymer layersSam Vaziri, A. D. Smith, Grzegorz Lupina, Max C. Lemme, Mikael Östling. 309-312 [doi]
• Impact of crystallographic orientation and impurity scattering in Graphene-Base Heterojunction Transistors for Terahertz OperationValerio Di Lecce, Roberto Grassi, Antonio Gnudi, Elena Gnani, Susanna Reggiani, Giorgio Baccarani. 313-316 [doi]
• Size-dependent electron mobility in InAs nanowiresE. G. Marin, F. G. Ruiz, Andres Godoy, Isabel M. Tienda-Luna, Francisco Gámiz. 317-320 [doi]
• Identifying failure mechanisms in LDMOS transistors by analytical stability analysisA. Ferrara, P. G. Steeneken, B. K. Boksteen, Anco Heringa, A. J. Scholten, J. Schmitz, Raymond J. E. Hueting. 321-324 [doi]
• TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regimeI. Imperiale, Susanna Reggiani, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, L. Nguyen, M. Denison. 325-328 [doi]
• The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulationsGiorgia Longobardi, Florin Udrea, Stephen Sque, Jeroen Croon, Fred Hurkx, Jan Sonsky. 329-332 [doi]
• TCAD analysis of HCS degradation in LDMOS devices under AC stress conditionsF. Monti, Susanna Reggiani, Gaetano Barone, Elena Gnani, Antonio Gnudi, Giorgio Baccarani, S. Poli, M.-Y. Chuang, W. Tian, D. Varghese, R. Wise. 333-336 [doi]
• GaN virtual prototyping: From traps modeling to system-level cascode optimizationG. Curatola, A. Kassmanhuber, S. Yuferev, J. Franke, G. Pozzovivo, Simone Lavanga, G. Prechtl, T. Detzel, O. Haeberlen. 337-340 [doi]
• Advanced TCAD for predictive FinFETs Vth mismatch using full 3D process/device simulationE. M. Bazizi, A. Zaka, T. Herrmann, Francis Benistant, J. H. M. Tin, J. P. Goh, L. Jiang, M. Joshi, H. van Meer, K. Korablev. 341-344 [doi]
• Impact of discrete dopants on an ultra-scaled FinFET using quantum transport simulationsR. Valín, A. Martinez, Manuel Aldegunde, J. R. Barker. 345-348 [doi]
• Accurate simulations of the interplay between process and statistical variability for nanoscale FinFET-based SRAM cell stabilityXingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov. 349-352 [doi]
• FDSOI molecular flash cell with reduced variability for low power flash applicationsVihar P. Georgiev, Salvatore M. Amoroso, Laia Vila-Nadal, Cristoph Busche, Leroy Cronin, Asen Asenov. 353-356 [doi]
• Monte Carlo modeling of the extraction of roughness parameters at nanometer scale by Critical Dimension Scanning Electron MicroscopyMauro Ciappa, Emre Ilgünsatiroglu, Alexey Yu. Illarionov, F. Filosomi, C. Santini. 357-360 [doi]
• Improved low-frequency noise for 0.3nm EOT thulium silicate interfacial layerMaryam Olyaei, B. Gunnar Malm, Eugenio Dentoni Litta, Per-Erik Hellstrom, Mikael Östling. 361-364 [doi]
• Impact of Off State Stress on advanced high-K metal gate NMOSFETsAlessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer. 365-368 [doi]
• Internal photoemission technique for high-k oxide/semiconductor band offset determination: The influence of semiconductor bulk propertiesOlof Engström, Henryk M. Przewlocki, Ivona Z. Mitrovic, Stephen Hall. 369-372 [doi]
• Study of low frequency noise in advanced SiGe: C heterojunction bipolar transistorsM. Seif, F. Pascal, B. Sagnes, A. Hoffmann, S. Haendler, P. Chevalier, D. Gloria. 373-376 [doi]
• Breakdown investigation in GaN-based MIS-HEMT devicesFabio Alessio Marino, Davide Bisi, Matteo Meneghini, Giovanni Verzellesi, Enrico Zanoni, Marleen Van Hove, Shuzhen You, Stefaan Decoutere, Denis Marcon, Steve Stoffels, Nicolo Ronchi, Gaudenzio Meneghesso. 377-380 [doi]
• Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluencesIsabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage. 381-384 [doi]
• Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensingJavier Leon, Xavier Perpiñà, Miquel Vellvehí, Xavier Jorda, Philippe Godignon. 385-388 [doi]
• Characterization of high-voltage charge-trapping effects in GaN-based power HEMTsDavide Bisi, A. Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni. 389-392 [doi]
• Physical model for GaN HEMT design optimization in high frequency switching applicationsD. Cucak, Miroslav Vasic, O. Garcia, Yves Bouvier, J. Oliver, Pedro Alou, J. A. Cobos, A. Wang, S. Martin-Horcajo, F. Romero, F. Calle. 393-396 [doi]
• Thermal characterization and modeling of ultra-thin silicon chipsMuhammad Alshahed, Zili Yu, Horst Rempp, Harald Richter, Christine Harendt, Joachim N. Burghartz. 397-400 [doi]
• Low frequency MOS-CV technique for selfconsistent determination of dark currents in high resistivity substratesRoland Sorge, J. Quick, Peter Schley, D. K. Bolze, Thomas Grabolla. 401-404 [doi]
• CMOS VT characterization by capacitance measurements in FDSOI PIN gated diodesCarlos Navarro, Maryline Bawedin, François Andrieu, Jacques Cluzel, Xavier Garros, Sorin Cristoloveanu. 405-408 [doi]
• Mobility spectrum analysis of magnetoresistance in fully-depleted MOSFETsG. A. Umana-Membreno, S. J. Chang, Maryline Bawedin, J. Antoszewski, Sorin Cristoloveanu, L. Faraone. 409-412 [doi]
• Temperature dependence of threshold voltage fluctuations in CMOS transistors incorporating halo implantHal Edwards, Niu Jin, Fan-Chi Hou, Li Jen Choi, Tracey Krakowski, Kuntal Joardar. 413-416 [doi]