Shin-ichi O'Uchi - researchr alias

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Viewing Publication 1 - 19 from 19

2022

Short Floating-Point CNN Accelerator for Brain-Computer Interface to Decode Visual InformationShin-ichi O'Uchi, Ryusuke Hayashi. iscas 2022: 2299-2303 [doi]

Low-Precision Quantization Techniques for Hardware-Implementation-Friendly BERT ModelsXinpei Zhang, Yi Ding, Mingfei Yu, Shin-ichi O'Uchi, Masahiro Fujita. isqed 2022: 1-6 [doi]

2019

Optimizing Weight Value Quantization for CNN InferenceWakana Nogami, Tsutomu Ikegami, Shin-ichi O'Uchi, Ryousei Takano, Tomohiro Kudoh. ijcnn 2019: 1-8 [doi]

2018

Image-Classifier Deep Convolutional Neural Network Training by 9-bit Dedicated Hardware to Realize Validation Accuracy and Energy Efficiency Superior to the Half Precision Floating Point FormatShin-ichi O'Uchi, Hiroshi Fuketa, Tsutomu Ikegami, Wakana Nogami, Takashi Matsukawa, Tomohiro Kudoh, Ryousei Takano. iscas 2018: 1-5 [doi]

2017

Fully Integrated, 100-mV Minimum Input Voltage Converter With Gate-Boosted Charge Pump Kick-Started by LC Oscillator for Energy HarvestingHiroshi Fuketa, Shin-ichi O'Uchi, Takashi Matsukawa. tcas, 64-II(4):392-396, 2017. [doi]

A 0.3-V 1-µW Super-Regenerative Ultrasound Wake-Up Receiver With Power ScalabilityHiroshi Fuketa, Shin-ichi O'Uchi, Takashi Matsukawa. tcas, 64-II(9):1027-1031, 2017. [doi]

A Closed-Form Expression for Minimum Operating Voltage of CMOS D Flip-FlopHiroshi Fuketa, Shin-ichi O'Uchi, Takashi Matsukawa. tvlsi, 25(7):2007-2016, 2017. [doi]

2015

PBTI for N-type tunnel FinFETsWataru Mizubayashi, T. Mori, K. Fukuda, Y. X. Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shin-ichi O'Uchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara. icicdt 2015: 1-4 [doi]

2014

SOI CMOS Voltage Multiplier Circuits with Body Bias Control Technique for Battery-Less Wireless Sensor SystemYasushi Igarashi, Tadashi Chiba, Shin-ichi O'Uchi, Meishoku Masahara, Kunihiro Sakamoto. ieicet, 97-A(3):741-748, 2014. [doi]

Variation behavior of tunnel-FETs originated from dopant concentration at source region and channel edge configurationShinji Migita, Takashi Matsukawa, T. Mori, K. Fukuda, Yukinori Morita, Wataru Mizubayashi, K. Endo, Y. X. Liu, Shin-ichi O'Uchi, Meishoku Masahara, Hiroyuki Ota. essderc 2014: 278-281 [doi]

Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performanceYukinori Morita, T. Mori, Shinji Migita, Wataru Mizubayashi, K. Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Y. X. Liu, Meishoku Masahara, Hiroyuki Ota. essderc 2014: 182-185 [doi]

2013

2012

2010

2007

Flex-Pass-Gate SRAM Design for Static Noise Margin Enhancement Using FinFET-Based TechnologyShin-ichi O'Uchi, Meishoku Masahara, Kunihiro Sakamoto, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Toshihiro Sekigawa, Hanpei Koike, Eiichi Suzuki. cicc 2007: 33-36 [doi]

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