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Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance

Yukinori Morita, T. Mori, Shinji Migita, Wataru Mizubayashi, K. Fukuda, Takashi Matsukawa, Kazuhiko Endo, Shin-ichi O'Uchi, Y. X. Liu, Meishoku Masahara, Hiroyuki Ota. Improvement of epitaxial channel quality on heavily arsenic- and boron-doped Si surfaces and impact on tunnel FET performance. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 182-185, IEEE, 2014. [doi]

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