0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits

Shin-ichi O'Uchi, Kazuhiko Endo, Yongxun Liu, Tadashi Nakagawa, Takashi Matsukawa, Yuki Ishikawa, Junichi Tsukada, Hiromi Yamauchi, Toshihiro Sekigawa, Hanpei Koike, Kunihiro Sakamoto, Meishoku Masahara. 0.5V FinFET SRAM with dynamic threshold control of pass gates for salvaging malfunctioned bits. In 36th European Solid-State Circuits Conference, ESSCIRC 2010, Sevilla, Spain, September 13-17, 2010. pages 474-477, IEEE, 2010. [doi]

Abstract

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