Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs

Davide Bisi, A. Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni. Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 389-392, IEEE, 2014. [doi]

Abstract

Abstract is missing.