Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Davide Bisi, A. Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni. Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 389-392, IEEE, 2014. [doi]

This author has not been identified. Look up 'Davide Bisi' in GoogleThis author has not been identified. Look up 'A. Stocco' in GoogleThis author has not been identified. Look up 'Matteo Meneghini' in GoogleThis author has not been identified. Look up 'Fabiana Rampazzo' in GoogleThis author has not been identified. Look up 'Andrea Cester' in GoogleThis author has not been identified. Look up 'Gaudenzio Meneghesso' in GoogleThis author has not been identified. Look up 'Enrico Zanoni' in Google

runs on WebDSL