Davide Bisi, A. Stocco, Matteo Meneghini, Fabiana Rampazzo, Andrea Cester, Gaudenzio Meneghesso, Enrico Zanoni. Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 389-392, IEEE, 2014. [doi]
@inproceedings{BisiSMRCMZ14,
title = {Characterization of high-voltage charge-trapping effects in GaN-based power HEMTs},
author = {Davide Bisi and A. Stocco and Matteo Meneghini and Fabiana Rampazzo and Andrea Cester and Gaudenzio Meneghesso and Enrico Zanoni},
year = {2014},
doi = {10.1109/ESSDERC.2014.6948842},
url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948842},
researchr = {https://researchr.org/publication/BisiSMRCMZ14},
cites = {0},
citedby = {0},
pages = {389-392},
booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
publisher = {IEEE},
isbn = {978-1-4799-4378-4},
}