L.-Å. Ragnarsson - researchr alias

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Viewing Publication 1 - 10 from 10

2021

Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paperJacopo Franco, H. Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer. icicdt 2021: 1-4 [doi]

2016

2014

Silicon LEDs in FinFET technologyGiulia Piccolo, P. I. Kuindersma, L.-Å. Ragnarsson, Raymond J. E. Hueting, Nadine Collaert, J. Schmitz. essderc 2014: 274-277 [doi]

2012

BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logicJacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, L.-Å. Ragnarsson, Tibor Grasser, Guido Groeseneken. mr, 52(9-10):1932-1935, 2012. [doi]

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applicationsJacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken. icicdt 2012: 1-4 [doi]

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacksRomain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, A. Thean, A. Spessot, C. Caillat, V. Srividya, P. Fazan. essderc 2012: 242-245 [doi]

2009

2005

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