Abstract is missing.
- Low power advanced digital technologies to enable Internet of ThingsLaurent Malier, Andreia Cathelin, Giorgio Cesana, Laurent Le-Pailleur. 15-16 [doi]
- Progress, status, and prospects of superconducting qubits for quantum computingMatthias Steffen, Jay M. Gambetta, Jerry M. Chow. 17-20 [doi]
- Soft electronics for the human bodyJohn A. Rogers. 21-22 [doi]
- Development of plasmonic MEMS CMOS infrared sensors for occupancy detectionM. F. Chowdhury, S. Z. Ali, S. Boual, R. Hopper, Florin Udrea. 97-100 [doi]
- Crosstalk mapping in CMOS SPAD arraysA. Ficorella, Lucio Pancheri, Gian-Franco Dalla Betta, P. Brogi, G. Collazuol, P. S. Marrocchesi, F. Morsani, L. Ratti, A. Savoy-Navarro. 101-104 [doi]
- Solution processable PbS quantum dots/silicon multispectral detectorsDana Cristea, Paula Obreja, Rebeca Tudor, Bogdan Bita. 105-108 [doi]
- Small-signal IMPATT diode characterization for mm-wave power generation in monolithic scenariosWogong Zhang, Michael Oehme, Klaus Matthies, Viktor Stefani, Ashraful I. Raju, Erich Kasper, Jorg Schulze. 109-112 [doi]
- FDSOI devices: Issues and innovative solutionsSorin Cristoloveanu, Maryline Bawedin. 117-120 [doi]
- End of the downsizing and world after thatHiroshi Iwai. 121-126 [doi]
- Performance and layout effects of SiGe channel in 14nm UTBB FDSOI: SiGe-first vs. SiGe-last integrationR. Berthelon, François Andrieu, P. Perreau, E. Baylac, A. Pofelski, Emmanuel Josse, D. Dutartre, A. Claverie, Michel Haond. 127-130 [doi]
- Towards high performance sub-10nm finW bulk FinFET technologyThomas Chiarella, S. Kubicek, E. Rosseel, Romain Ritzenthaler, A. Hikavyy, P. Eyben, A. De Keersgieter, L.-Å. Ragnarsson, M. S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, D. Mocuta, Anda Mocuta, Aaron Voon-Yew Thean. 131-134 [doi]
- Electrical characterization of FDSOI CMOS devicesG. Ghibaudo. 135-141 [doi]
- Statistical characterization of drain current local and global variability in sub 15nm Si/SiGe Trigate pMOSFETsR. Lavieville, T. A. Karatsori, Christoforos Theodorou, Sylvain Barraud, C. A. Dimitriadis, Gérard Ghibaudo. 142-145 [doi]
- Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHCAlessandro Pezzotta, C.-M. Zhang, F. Jazaeri, C. Bruschini, G. Borghello, F. Faccio, S. Mattiazzo, Andrea Baschirotto, Christian Enz. 146-149 [doi]
- Thermal-aware CMOS: Challenges for future technology and design evolutionsKen Uchida, Tsunaki Takahashi. 150-153 [doi]
- Physical understanding and optimization of resistive switching characteristics in oxide-RRAMJ. F. Kang, P. Huang, Z. Chen, Y. D. Zhao, C. Liu, R. Z. Han, L. F. Liu, X. Y. Liu, Y. Y. Wang, B. Gao. 154-159 [doi]
- Energy dissipation during pulsed switching of strontium-titanate based resistive switching memory devicesK. Fleck, Ulrich Bottger, Rainer Waser, N. Aslam, S. Hoffmann-Eifert, Stephan Menzel. 160-163 [doi]
- Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devicesWonjoo Kim, Dirk J. Wouters, Stephan Menzel, Christian Rodenbucher, Rainer Waser, Vikas Rana. 164-167 [doi]
- Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cellsM. Barlas, B. Traore, Laurent Grenouillet, Stefania Bernasconi, Philippe Blaise, M. Alayan, B. Sklenard, E. Jalaguier, P. Rodriguez, F. Mazen, E. Vilain, M. Guillermet, S. Jeannot, Elisa Vianello, Luca Perniola. 168-171 [doi]
- New fast distributed thermal model for analysis of GaN based power devicesVice Sodan, Federica Lidia Teresa Maggioni, Herman Oprins, Steve Stoffels, Martine Baelmans, Ingrid De Wolf. 172-175 [doi]
- Performance of tri-gate AlGaN/GaN HEMTsMohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture, Rüdiger Quay, Oliver Ambacher. 176-179 [doi]
- A full-quantum simulation study of InGaAs NW MOSFETs including interface trapsMichele Visciarelli, Antonio Gnudi, Elena Gnani, Susanna Reggiani. 180-183 [doi]
- Performance study of strained III-V materials for ultra-thin body transistor applicationsMartin Rau, Troels Markussen, Enrico Caruso, David Esseni, Elena Gnani, Antonio Gnudi, Petr A. Khomyakov, Mathieu Luisier, Patrik Osgnach, Pierpaolo Palestri, Susanna Reggiani, Andreas Schenk, Luca Selmi, Kurt Stokbro. 184-187 [doi]
- Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETsHamilton Carrillo-Nunez, Reto Rhyner, Mathieu Luisier, Andreas Schenk. 188-191 [doi]
- SiC power devices: From conception to social impactB. Jayant Baliga. 192-197 [doi]
- Wide temperature range integrated amplifier in bipolar 4H-SiC technologyRaheleh Hedayati, Luigia Lanni, Ana Rusu, Carl-Mikael Zetterling. 198-201 [doi]
- 600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substratesMuhammad Alshahed, M. Alomari, Christine Harendt, Joachim N. Burghartz, C. Wachter, T. Bergunde, S. Lutgen. 202-205 [doi]
- Wide Bandgap power devices and applications; the U.S. initiativeAnant Agarwal, Laura Marlino, Robert Ivester, Mark Johnson. 206-209 [doi]
- 2-FET with Dual Ground PlanesH. El Dirani, Pascal Fonteneau, Yohann Solaro, Philippe Ferrari, Sorin Cristoloveanu. 210-213 [doi]
- A CMOS-compatible boosted transistor having >2× drive current and low leakage currentJin-Woo Han, Victor Moroz, Andrey Kucherov, Dinesh Maheshwari, Valentin Abramzon, Zvi Or-Bach, Yoshio Nishi, Yuniarto Widjaja. 214-217 [doi]
- Impact of intermediate BEOL technology on standard cell performances of 3D VLSIMelanie Brocard, Guillaume Berhault, Sebastien Thuries, Fabien Clermidy, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, François Andrieu, Fabien Deprat, J. Lacord, Olivier Rozeau, Gerald Cibrario, Olivier Billoint. 218-221 [doi]
- Analog performance of strained SOI nanowires down to 10KBruna Cardoso Paz, Marcelo Antonio Pavanello, Mikaël Casse, Sylvain Barraud, Gilles Reimbold, Maud Vinet, Olivier Faynot. 222-225 [doi]
- Opportunities brought by sequential 3D CoolCube™ integrationMaud Vinet, Perrine Batude, Claire Fenouillet-Béranger, Laurent Brunet, Vincent Mazzocchi, Cao-Minh Vincent Lu, Fabien Deprat, Jessy Micout, Bernard Previtali, Paul Besombes, Nils Rambal, François Andrieu, Olivier Billoint, Melanie Brocard, Sebastien Thuries, Guillaume Berhault, Cristiano Lopes Dos Santos, Gerald Cibrario, Fabien Clermidy, Daniel Gitlin, Olivier Faynot. 226-229 [doi]
- 2D electronics - opportunities and limitationsZ. Geng, W. Kinberger, R. Granzner, J. Pezoldt, F. Schwierz. 230-235 [doi]
- Contact resistance Study of "edge-contacted" metal-graphene interfacesVikram Passi, Amit Gahoi, J. Ruhkopf, Satender Kataria, F. Vaurette, E. Pallecchi, H. Happy, Max C. Lemme. 236-239 [doi]
- Physics-based electrical compact model for monolayer Graphene FETsJorgue Daniel Aguirre Morales, Sébastien Fregonese, C. Mukherjee, Cristell Maneux, Thomas Zimmer, W. Wei, H. Happy. 240-243 [doi]
- CVD graphene-FET based cascode circuits: A design exploration and fabrication towards intrinsic gain enhancementMario Iannazzo, Eduard Alarcón, H. Pandey, Vikram Passi, Max C. Lemme. 244-247 [doi]
- On-chip I-V variability and random telegraph noise characterization in 28 nm CMOSAmy Whitcombe, Scott Taylor, Martin Denham, Vladimir Milovanovic, Borivoje Nikolic. 248-251 [doi]
- Probing defects generation during stress in high-κ/metal gate FinFETs by random telegraph noise characterizationFrancesco Maria Puglisi, Felipe Costantini, Ben Kaczer, Luca Larcher, Paolo Pavan. 252-255 [doi]
- Noise-induced dynamic variability in nano-scale CMOS SRAM cellsChristoforos G. Theodorou, Mouenes Fadlallah, Xavier Garros, Charalambos A. Dimitriadis, Gérard Ghibaudo. 256-259 [doi]
- Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locationsC. Mukherjee, Thomas Jacquet, Thomas Zimmer, Cristell Maneux, Anjan Chakravorty, J. Boeck, Klaus Aufinger. 260-263 [doi]
- Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADsV. Agarwal, Anne-Johan Annema, S. Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta. 264-267 [doi]
- Novel suspended graphene devices for extreme sensingHiroshi Mizuta, Jian Sun, Manoharan Muruganathan, Hiroshi Mizuta. 268-271 [doi]
- Ultra low power NO2 gas sensors based on suspended CNFETsChristofer Hierold, Kiran Chikkadi, Miroslav Haluska, Cosmin Roman. 272-275 [doi]
- Composition-modulated electrodeposited PdNi-Si hydrogen sensors for low power applicationsC. H. De Groot, Long Tao Dong, A. Usgaocar, V. M. C. Chavagnac. 276-279 [doi]
- CMOS-compatible SOI micro-hotplate-based oxygen sensorViorel Avramescu, Andrea De Luca, Mihai Brezeanu, Syed Zeeshan Ali, Florin Udrea, Octavian Buiu, Cornel Cobianu, Bogdan-Catalin Serban, Julian Gardner, Viorel Dumitru, Alisa Stratulat. 280-283 [doi]
- High-quality synthetic 2D transition metal dichalcogenide semiconductorsDumitru Dumcenco, Dmitry Ovchinnikov, Kolyo Marinov, Andras Kis. 284-286 [doi]
- Graphene / a-Si: H multispectral photodetectorsDaniel S. Schneider, Andreas Bablich, Max C. Lemme. 287-290 [doi]
- Adhesion lithography to fabricate MoS2 FETs with self-assembled monolayer-based gate dielectricsTakamasa Kawanago, Ryo Ikoma, Du Wanjing, Shunri Oda. 291-294 [doi]
- Floating gate memory based on MoS2 channel and iCVD polymer tunneling dielectricMyung Hun Woo, Byung Chul Jang, Junhwan Choi, Gwang Hyuk Shin, Hyejeong Seong, Sung Gap Im, Sung-Yool Choi. 295-298 [doi]
- Toward effective passivation of graphene to humidity sensing effectsAnderson D. Smith, Karim Elgammal, Xuge Fan, Max C. Lemme, Anna Delin, Frank Niklaus, Mikael Östling. 299-302 [doi]
- Management of parasitic bipolars in modular high power LDMOS technologyMoshe Agam, Jaroslav Pjencak, Dusan Prejda, Agajan Suwhanov, Thierry Yao, Ladislav Seliga. 303-306 [doi]
- Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FETCem Alper, Jose L. Padilla, Pierpaolo Palestri, Adrian M. Ionescu. 307-310 [doi]
- The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift registerThomas Windbacher, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr. 311-314 [doi]
- Closed-form transition rate in hopping conductionEnrico Piccinini, Massimo Rudan, Rossella Brunetti. 315-318 [doi]
- Analysis of substrate currents propagation in HVCMOS technologyCamillo Stefanucci, Pietro Buccella, Ehrenfried Seebacher, Alexander Steinmair, Maher Kayal, Jean-Michel Sallese. 319-322 [doi]
- Novel AlGaN/GaN omega-FinFETs with excellent device performancesKi-Sik Im, Chul-Ho Won, Jae Hwa Seo, In Man Kang, Sindhuri Vodapally, Yong Soo Lee, Jung Hee Lee, Yong-Tae Kim, Sorin Cristoloveanu. 323-326 [doi]
- Low-energy consumption nano-opto-electronics based on III-nitride-LED mesoscopic structuresD. Grutzmacher, M. Mikulics, H. Hardtdegen. 327-329 [doi]
- Diamond electronicsMutsuko Hatano, Takayuki Iwasaki, Satoshi Yamasaki, Toshiharu Makino. 330-332 [doi]
- Quantum dot devices: Technology vehicles for nanoscale physics and paths for future applicationsShunri Oda. 333-336 [doi]
- A manufacturable process for single electron charge detection, a step towards quantum computingGabriel Droulers, Serge Ecoffey, Dominique Drouin, Michel Pioro-Ladriere. 337-340 [doi]
- Ballistic transport and high thermopower in one-dimensional InAs nanowiresSiegfried F. Karg, Vanessa Schaller, Andrew Gaul, Kirsten E. Moselund, Heinz Schmid, Bernd Gotsmann, Johannes Gooth, Heike Riel. 341-344 [doi]
- Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICsClara F. Moldovan, Wolfgang A. Vitale, Michele Tamagnone, Juan R. Mosig, Adrian M. Ionescu. 345-348 [doi]
- Steep slope transistors: Tunnel FETs and beyondAlan C. Seabaugh, Cristobal Alessandri, Mina Asghari Heidarlou, Hua-Min Li, Leitao Liu, Hao Lu, Sara Fathipour, Paolo Paletti, Pratyush Pandey, Trond Ytterdal. 349-351 [doi]
- Field-enhanced design of steep-slope VO2 switches for low actuation voltageWolfgang A. Vitale, Michele Tamagnone, Clara F. Moldovan, Nicolas Emond, Emanuele A. Casu, Luca Petit, Boris Le Drogoff, Mohamed Chaker, Juan R. Mosig, Adrian M. Ionescu. 352-355 [doi]
- 16Kb hybrid TFET/CMOS reconfigurable CAM/SRAM array based on 9T-TFET bitcellNavneet Gupta, Adam Makosiej, Andrei Vladimirescu, Amara Amara, Costin Anghel. 356-359 [doi]
- Supersteep retrograde doping in ferroelectric MOSFETs for sub-60mV/dec subthreshold swingTommaso Rollo, David Esseni. 360-363 [doi]
- Impact of field cycling on HfO2 based non-volatile memory devicesUwe Schroeder, Milan Pesic, Tony Schenk, H. Mulaosmanovic, Stefan Slesazeck, J. Ocker, C. Richter, E. Yurchuk, K. Khullar, J. Muller, P. Polakowski, E. D. Grimley, J. M. LeBeau, S. Flachowsky, S. Jansen, S. Kolodinski, R. van Bentum, A. Kersch, C. Kunneth, Thomas Mikolajick. 364-368 [doi]
- Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applicationsFranz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Bottger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder. 369-372 [doi]
- Inherent stochasticity in phase-change memory devicesManuel Le Gallo, Tomas Tuma, Federico Zipoli, Abu Sebastian, Evangelos Eleftheriou. 373-376 [doi]
- Bipolar-switching operated phase change memory (PCM) for improved high-temperature reliabilityNicola Ciocchini, M. Laudato, Andrea L. Lacaita, Daniele Ielmini, M. Boniardi, E. Varesi, Paolo Fantini. 377-380 [doi]
- Soft and bio-degradable electronics: Technology challenges and future applicationsGiovanni A. Salvatore. 381-384 [doi]
- Time multiplexed active neural probe with 678 parallel recording sitesBogdan C. Raducanu, Refet Firat Yazicioglu, Carolina Mora Lopez, Marco Ballini, Jan Putzeys, Shiwei Wang, Alexandru Andrei, Marleen Welkenhuysen, Nick Van Helleputte, Silke Musa, Robert Puers, Fabian Kloosterman, Chris Van Hoof, Srinjoy Mitra. 385-388 [doi]
- Bipolar junction transistor based sensors for chemical and biological sensingSufi Zafar, Tak Ning. 389-392 [doi]
- Signal-to-noise ratio enhancement using the gate coupling effectI. Zadorozhnyi, S. Vitusevich. 393-396 [doi]
- Advances in steep-slope tunnel FETsKatsuhiro Tomioka, Junichi Motohisa, Takashi Fukui. 397-402 [doi]
- Complementary III-V heterostructure tunnel FETsKirsten E. Moselund, D. Cutaia, Heinz Schmid, Heike Riel, S. Sant, A. Schenk. 403-407 [doi]
- Si n-TFETs on ultra thin body with suppressed ambipolarityChang Liu, Qinghua Han, Gia Vinh Luong, Keyvan Narimani, Stefan Glass, Andreas T. Tiedemann, Stefan Trellenkamp, Wenjie Yu, Xi Wang, Siegfried Mantl, Qing-Tai Zhao. 408-411 [doi]
- Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistorsD. Verreck, A. S. Verhulst, Bart Soree, Nadine Collaert, Anda Mocuta, Aaron Thean, Guido Groeseneken. 412-415 [doi]
- TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic correctionsStefania Carapezzi, Enrico Caruso, Antonio Gnudi, Susanna Reggiani, Elena Gnani. 416-419 [doi]
- Empirical ballistic mobility model for drift-diffusion simulationA. Erlebach, K. H. Lee, F. M. Bufler. 420-423 [doi]
- A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDDG. Mugny, F. G. Pereira, D. Rideau, Francois Triozon, Yann-Michel Niquet, M. Pala, D. Garetto, Christophe Delerue. 424-427 [doi]
- A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETsPrateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser. 428-431 [doi]
- ReRAM technology evolution for storage class memory applicationYangyin Chen, Chris Petti. 432-435 [doi]
- Highly-uniform multi-layer ReRAM crossbar circuitsGina C. Adam, Brian D. Hoskins, Mirko Prezioso, Farnood Merrikh-Bayat, B. Chakrabarti, Dmitri B. Strukov. 436-439 [doi]
- Large-scale neural networks implemented with Non-Volatile Memory as the synaptic weight element: Impact of conductance responseSeverin Sidler, Irem Boybat, Robert M. Shelby, Pritish Narayanan, Jun-Woo Jang, Alessandro Fumarola, Kibong Moon, Yusuf Leblebici, Hyunsang Hwang, Geoffrey W. Burr. 440-443 [doi]
- New approach for a multi-cantilever arrays sensor system with advanced MOEMS readoutF. Ivaldi, Tomasz Bieniek, Pawel Janus, Jerzy Zajac, Piotr Grabiec, W. Majstrzyk, D. Kopiec, Teodor P. Gotszalk. 444-447 [doi]
- Microelectromechanical resonator based digital logic elementsMd Abdullah Al Hafiz, Lakshmoji Kosuru, Mohammad Ibrahim Younis, Hossein Fariborzi. 448-451 [doi]
- Heterogeneous integration of low power pH FinFET sensors with passive capillary microfluidics and miniaturized Ag/AgCl quasi-Reference ElectrodeErick Garcia-Cordero, Hoel Guerin, Amira Muhech, Francesco Bellando, Adrian M. Ionescu. 452-455 [doi]
- Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulationFabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes. 456-459 [doi]
- A large signal non quasi static compact model for printed organic thin film transistorsAntonio Valletta, Matteo Rapisarda, Sabrina Calvi, Luigi Mariucci, Guglielmo Fortunato. 460-463 [doi]
- Compact model for variability of low frequency noise due to number fluctuation effectNikolaos Mavredakis, Matthias Bucher. 464-467 [doi]
- Advanced 3-D device and circuit electrothermal simulations of power integrated circuitAles Chvála, Juraj Marek, Patrik Pribytny, Daniel Donoval. 468-471 [doi]
- Replacing Si to SiC: Opportunities and challengesMuhammad Nawaz, Kalle Ilves. 472-475 [doi]