Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET

Cem Alper, Jose L. Padilla, Pierpaolo Palestri, Adrian M. Ionescu. Impact of device geometry of the fin Electron-Hole Bilayer Tunnel FET. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 307-310, IEEE, 2016. [doi]

Abstract

Abstract is missing.