Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations

C. Mukherjee, Thomas Jacquet, Thomas Zimmer, Cristell Maneux, Anjan Chakravorty, J. Boeck, Klaus Aufinger. Comprehensive study of random telegraph noise in base and collector of advanced SiGe HBT: Bias, geometry and trap locations. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 260-263, IEEE, 2016. [doi]

Abstract

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