Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation

Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes. Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation. In 46th European Solid-State Device Research Conference, ESSDERC 2016, Lausanne, Switzerland, September 12-15, 2016. pages 456-459, IEEE, 2016. [doi]

Abstract

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