Marc M. Heyns - researchr alias

researchr

You are not signed in
Sign in
Sign up

Viewing Publication 1 - 9 from 9

2022

Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurementsMd Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt. vlsit 2022: 340-342 [doi]

2017

Material selection and device design guidelines for two-dimensional materials based TFETsTarun Agarwal, Bart Soree, Iuliana Radu, Praveen Raghavan, Gianluca Fiori, Marc M. Heyns, Wim Dehaene. essderc 2017: 54-57 [doi]

2016

Effect of material parameters on two-dimensional materials based TFETs: An energy-delay perspectiveTarun Agarwal, Iuliana Radu, Praveen Raghavan, Gianluca Fiori, Aaron Thean, Marc M. Heyns, Wim Dehaene. esscirc 2016: 55-58 [doi]

2015

The relationship between border traps characterized by AC admittance and BTI in III-V MOS devicesAbhitosh Vais, Koen Martens, J. Franco, D. Lin, A. Alian, Philippe Roussel, S. Sioncke, Nadine Collaert, Aaron Thean, Marc M. Heyns, Guido Groeseneken, Kristin De Meyer. irps 2015: 5 [doi]

2012

Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applicationsJacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken. icicdt 2012: 1-4 [doi]

2007

Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modelingM. Houssa, M. Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns. mr, 47(6):880-889, 2007. [doi]

2005

Modelling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performanceG. S. Lujan, W. Magnus, L.-Å. Ragnarsson, S. Kubicek, Stefan De Gendt, Marc M. Heyns, K. De Meyer. mr, 45(5-6):794-797, 2005. [doi]

2001

In situ crystallisation in ZrO::2:: thin films during high temperature X-ray diffractionC. Zhao, G. Roebben, H. Bender, E. Young, S. Haukka, M. Houssa, M. Naili, Stefan De Gendt, Marc M. Heyns, O. Van Der Biest. mr, 41(7):995-998, 2001. [doi]

1999

Sign in or sign up to see more results.

runs on WebDSL