Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling

M. Houssa, M. Aoulaiche, Stefan De Gendt, Guido Groeseneken, Marc M. Heyns. Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling. Microelectronics Reliability, 47(6):880-889, 2007. [doi]

Abstract

Abstract is missing.