Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment

Shiqian Shao, Wei-Cheng Lien, Ayden Maralani, Albert P. Pisano. Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 138-141, IEEE, 2014. [doi]

Abstract

Abstract is missing.