Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment

Shiqian Shao, Wei-Cheng Lien, Ayden Maralani, Albert P. Pisano. Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment. In 44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014. pages 138-141, IEEE, 2014. [doi]

@inproceedings{ShaoLMP14,
  title = {Integrated 4H-silicon carbide diode bridge rectifier for high temperature (773 K) environment},
  author = {Shiqian Shao and Wei-Cheng Lien and Ayden Maralani and Albert P. Pisano},
  year = {2014},
  doi = {10.1109/ESSDERC.2014.6948777},
  url = {http://dx.doi.org/10.1109/ESSDERC.2014.6948777},
  researchr = {https://researchr.org/publication/ShaoLMP14},
  cites = {0},
  citedby = {0},
  pages = {138-141},
  booktitle = {44th European Solid State Device Research Conference, ESSDERC 2014, Venice Lido, Italy, September 22-26, 2014},
  publisher = {IEEE},
  isbn = {978-1-4799-4378-4},
}