Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 73-76, IEEE, 2013. [doi]
Abstract is missing.