Giovanni Betti Beneventi, Elena Gnani, Antonio Gnudi, Susanna Reggiani, Giorgio Baccarani. Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty. In Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013. pages 73-76, IEEE, 2013. [doi]
@inproceedings{BeneventiGGRB13,
title = {Boosting InAs TFET on-current above 1 mA/μm with no leakage penalty},
author = {Giovanni Betti Beneventi and Elena Gnani and Antonio Gnudi and Susanna Reggiani and Giorgio Baccarani},
year = {2013},
doi = {10.1109/ESSDERC.2013.6818822},
url = {http://dx.doi.org/10.1109/ESSDERC.2013.6818822},
researchr = {https://researchr.org/publication/BeneventiGGRB13},
cites = {0},
citedby = {0},
pages = {73-76},
booktitle = {Proceedings of the European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, September 16-20, 2013},
publisher = {IEEE},
}